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Ochs, Andrew M.

Publications and source records attributed to Ochs, Andrew M..

4 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Synergizing a Large Ordinary Nernst Effect and Axis‐Dependent Conduction Polarity in Flat Band KMgBi Crystals

The exploration of quantum materials in which an applied thermo/electrical/magnetic field along one crystallographic direction produces an anisotropic response has led to unique functionalities. Along these lines, KMgBi is a layered, narrow gap semiconductor near a critical state between multiple Dirac phases due to the presence of a flat band near the Fermi level. The valence band is highly anisotropic with minimal cross-plane dispersion, which, in combination with an isotropic conduction band, enables axis-dependent conduction polarity. Thermopower and Hall measurements indicate dominant p-type conduction along the cross-plane direction, and n-type conduction along the in-plane direction, leading to a significant zero-field transverse thermoelectric response when the heat flux is at an angle to the principal crystallographic directions. Additionally, a large Ordinary Nernst effect (ONE) is observed with an applied field. It arises from the ambipolar term in the Nernst effect, whereby the Lorentz force on electrons and holes makes them drift in opposite directions so that the resulting Nernst voltage becomes a function of the difference between their partial thermopowers, greatly enhancing the ONE. It is proven that axis-dependent polarity can synergistically enhance the ONE, in addition to leading to a zero-field transverse thermoelectric performance.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Axis dependent conduction polarity in the air-stable semiconductor, PdSe 2

Axis-dependent conduction polarity (ADCP) is a unique electronic phenomena in which the charge polarity of carrier conduction can differ from p-type to n-type depending on the direction of travel through the crystal. Most materials that exhibit ADCP are metals, and very few semiconducting materials exhibit this effect. Here, in this work, we establish that PdSe 2 , a ~0.5 eV band gap semiconductor that is air- and water-stable, exhibits ADCP, through the growth and characterization of the transport properties of crystals with extrinsic p- and n-type doping levels of Ir and Sb, respectively, in the 10 16 –10 18 cm –3 range. Electron doped PdSe 2 exhibits p-type conduction in the cross-plane direction and n-type conduction along the in-plane directions above an onset temperature of 100–200 K that varies with doping level. Lightly p-doped samples show p-type thermopower in all directions at low temperatures, but above ~360 K the in-plane thermopower turns negative. Density functional theory calculations indicate that the origin of ADCP arises from the complementary effective mass anisotropies in the valence and conduction bands in this material, which facilitate hole transport in the cross-plane direction, and electron transport along the in-plane directions. ADCP occurs at temperatures with sufficient thermal population of both carrier types to overcome the extrinsic doping levels to exploit the effective mass anisotropy. In total, the development of this stable semiconductor in which thermally or optically excited holes and electrons inherently migrate along different directions opens up numerous potential applications in a multitude of technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Computationally Guided Discovery of Axis-Dependent Conduction Polarity in NaSnAs Crystals

Most electronic materials exhibit a single dominant charge carrier type, either holes or electrons, along all crystallographic directions. However, there are a small number of compounds, mostly metals, that exhibit simultaneous p-type and n-type conduction behavior along different crystallographic directions. We demonstrate that the experimental discovery of semiconductors with this axis-dependent conduction polarity can be facilitated by identifying a large anisotropy of either the electron or hole effective masses (m*) or both, providing the electron and hole masses dominate along different crystallographic directions. We calculated the layered semiconductor NaSnAs to have a lower electron m* in-plane than the cross-plane and a very large hole m* in-plane and small hole m* cross-plane. We established the growth of >3 mm-sized NaSnAs crystals via Sn flux and confirmed the band gap to be 0.65 eV, in agreement with theory. NaSnAs exhibits p-type thermopowers cross-plane and n-type thermopowers in-plane, confirming that the large anisotropy in the effective mass at the band edges is an excellent indicator for axis-dependent conduction polarity. Altogether, this work shows that the discovery of semiconductors with such a phenomenon can be accelerated by computationally evaluating the anisotropic curvatures of the band edges, paving the way for their future discovery and application.

30 DIRECT ENERGY CONVERSION↗