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Oconnell, M.

Publications and source records attributed to Oconnell, M..

Shuttle payload bay dynamic environments: Summary and conclusion report for STS flights 1-5 and 9

The vibration, acoustic and low frequency loads data from the first 5 shuttle flights are presented. The engineering analysis of that data is also presented. Vibroacoustic data from STS-9 are also presented because they represent the only data taken on a large payload. Payload dynamic environment predictions developed by the participation of various NASA and industrial centers are presented along with a comparison of analytical loads methodology predictions with flight data, including a brief description of the methodologies employed in developing those predictions for payloads. The review of prediction methodologies illustrates how different centers have approached the problems of developing shuttle dynamic environmental predictions and criteria. Ongoing research activities related to the shuttle dynamic environments are also described. Analytical software recently developed for the prediction of payload acoustic and vibration environments are also described.

Oconnell, M.

Shuttle payload dynamic environments - Update

This paper represents a brief summary of a report titled, 'Shuttle Payload Bay Dynamic Environments Summary and Conclusion Report' prepared by the Jet Propulsion Laboratory for the NASA Office of Aeronautics and Space Technology (OAST). The report provides a summary of the dynamic environmental data taken during the first five Space Shuttle flights. The present paper is concerned with a brief synopsis of the report's acoustic and high frequency data evaluation, taking into account also an example acoustic prediction method. Attention is given to an acoustic data summary, a vibration data summary, environmental uncertainties, data reduction errors, spatial bias errors, payload effects, spatial variation, flight to flight variation, payload prediction, and an example prediction.

Oconnell, M.

Memory behavior of an MNS capacitor.

Metal-/Si nitride/-Si/MNS/ capacitor memory behavior due to high voltage pulses, discussing charge transfer, stored charge location and tunneling conduction

Oconnell, M.