Engineering topics
Publications and source records attributed to Oeffinger, T. R..
Instrument design provides replicate function between device storage area and guardrail detector in order that nondestructive read-out of memory can be achieved. Use of guardrail detectors in magnetic domain (bubble) circuits is proposed method of increasing detector signal output by increasing detector size without dedicating an excessive amount of device chip area to detector portion.
Experiments were devised to study the angular variation of the resistance and noise properties of one- and two-level chevron stretcher magnetoresistive detectors for use in field access bubble memory devices. All measurements, made with an electronic system, were performed on glass or garnet samples upon which 1 micron of SiO2 was sputter-deposited, followed by 4000 A of Permalloy for the 28-micron-period devices and 0.8 microns of SiO2, followed by 3000 A of Permalloy for the 20-micron-period devices. The geometrical and drive-state dependence of the zero-state noise were studied, as was its frequency dependence. It is found that both types of detectors operate primarily in the amplitude-shift mode for drive fields of interest and that the presence of a bubble in a detector causes a magnetoresistance change equal to that produced by increasing the in-plane drive field about 8 Oe in the absence of a bubble.