Engineering topics

Ogunbunmi, Michael O.

Publications and source records attributed to Ogunbunmi, Michael O..

11 records

DOE OSTI2023

Exploiting the fraternal twin nature of thermoelectrics and topological insulators in Zintl phases as a tool for engineering new efficient thermoelectric generators

This review article presents a radical overview of the rich chemistry and physics of Zintl phases as it relates to their interesting structure–property relationships. In particular, it unveils the evolution of topological insulator (TI) and thermoelectric (TE) properties in Zintl materials as having a common origin and as such are driven by the same materials properties ranging from a narrow band gap to a strong spin-orbit coupling effect. To this end, excellent TE properties are ubiquitous in many TIs and because of the ever-increasing interest in the studies of topological properties of matter, several robust theoretical frameworks now exist to provide us with additional intuitive nature and understanding of this exotic phase of matter. Here, this invariably has also led to the screening of tens of thousands of materials for the presence of nontrivial topology using the combined predictive power of machine learning and ab-initio first-principles calculations. On the other hand, studies on TE materials are still largely based on some sort of hit-and-miss approach. Here we leveraged on the similar materials features and intersection between TE and TIs and review several Zintl materials that are already identified as TIs and present how exploiting their bulk and surface states properties can be harnessed for developing highly efficient TE materials for practical purposes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2023

Robust three-dimensional type-II Dirac semimetal state in SrAgBi

Topological semimetals such as Dirac, Weyl or nodal line semimetals are widely studied for their peculiar properties including high Fermi velocities, small effective masses and high magnetoresistance. When the Dirac cone is tilted, exotic phenomena could emerge whereas materials hosting such states are promising for photonics and plasmonics applications. Here we present evidence that SrAgBi is a spin-orbit coupling-induced type-II three-dimensional Dirac semimetal featuring tilted Dirac cone at the Fermi energy. Near charge compensation and Fermi surface characteristics are not much perturbed by 7% of vacancy defects on the Ag atomic site, suggesting that SrAgBi could be a material of interest for observation of robust optical and spintronic topological quantum phenomena.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

Observation of Anomalously High Seebeck Coefficients in the Family of Zintl Phase Semiconductors Ca 10 RE CdSb 9 ( RE = Rare-Earth Metal)

This work reports the synthesis, structure and thermoelectric transport properties of the hole-dominated semiconductors with a general formula Ca 10 RECdSb 9 (RE = Y, Ce, Nd, Sm, and Lu). These materials feature unexpectedly high Seebeck coeffi-cients, up to 650 µV/K at 600 K, and electrical resistivities on the order of 1–1000 mΩ·cm, which is an indication of a degen-erate semiconducting state. For example, the Seebeck coeffi-cient observed in Ca 10 NdCdSb 9 (309 µV/K at 600 K) is accom-panied by low and metallic-like electrical resistivity (6 mΩ·cm) and a carrier concentration n = 4.68×10 20 cm –3 . The calculated power factor PF in Ca 10 NdCdSb 9 is 0.88 µW/cm·K 2 at 300 K, and calculations based on the single parabolic band model indi-cate that an optimum PF opt of 1.68 μW/cm·K 2 can be achieved at that temperature for a carrier concentration n opt = 6.62 × 10 19 cm –3 . Here, the estimated thermoelectric figure of merit zT in this material, when properly tuned is expected to surpass zT = 1 at 600 K.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Giant Thermoelectric Power Factor Anisotropy in PtSb 1.4 Sn 0.6

In this work, we report on the giant anisotropy found in the thermoelectric power factor (S 2 σ) of marcasite structure-type PtSb 1.4 Sn 0.6 single crystal. PtSb 1.4 Sn 0.6 , synthesized using an ambient pressure flux growth method upon mixing Sb and Sn on the same atomic site, is a new phase different from both PtSb 2 and PtSn 2 , which crystallize in the cubic Pa$\bar{3}$ pyrite and Fm$\bar{3}$m fluorite unit cell symmetry, respectively. The large difference in S 2 σ for heat flow applied along different principal directions of the orthorhombic unit cell stems mostly from anisotropic Seebeck coefficients.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Structural Complexity and Tuned Thermoelectric Properties of a Polymorph of the Zintl Phase Ca 2 CdSb 2 with a Non-centrosymmetric Monoclinic Structure

The Zintl phase Ca 2 CdSb 2 was found to be dimorphic. Besides the orthorhombic Ca 2 CdSb 2 (-o), here we report on the synthesis, the structural characterization, and the thermoelectric transport properties of its monoclinic form, Ca 2 CdSb 2 (-m), and its Lu-doped variant Ca 2–x Lu x CdSb 2 (x ≈ 0.02). The monoclinic structure exhibits complex structural characteristics and constitutes a new structure type with the non-centrosymmetric space group Cm (Z = 30). The electrical resistivity ρ(T) measured on single crystals of both phases portrays a transition from a semiconductor to a degenerate p-type semiconductor upon doping with Lu and with an attendant change in the Hall carrier concentration nH from 7.15 × 10 18 to 2.30 × 10 19 cm –3 at 300 K. The Seebeck coefficient S(T) of both phases are comparable and indicate a hole-dominated carrier transport mechanism with magnitudes of 133 and 116 μV/K at 600 K for Ca 2 CdSb 2 (-m) and Ca 2–x Lu x CdSb 2 , respectively. The convoluted atomic bonding with an attendant large unit cell volume of ~4365 Å 3 drives a putative low thermal conductivity in these materials resulting in a power factor PF of 1.63 μW/cm K 2 and an estimated thermoelectric figure of merit zT of ~0.5 for Ca 2–x Lu x CdSb 2 at 600 K. Furthermore, differential scanning calorimetry results reveal the stability of these phases up to about 960 K, making them candidates for moderate temperature thermoelectric materials.

36 MATERIALS SCIENCE↗

DOE OSTI2022

The highly disordered Zintl phase Ca 10 GdCdSb 9 – New example of a p-type semiconductor with remarkable thermoelectric properties

Ca 10 GdCdSb 9 is a new Zintl phase with a large unit cell volume (~2500 Å 3 ) and a very complex, disordered structure, which can drive the realization of ultralow thermal conductivity in this material. The measured Seebeck coefficient, α, for single-crystalline Ca 10 GdCdSb 9 approaches 350 μV/K at 600 K. The experimentally determinedelectrical resistivity of Ca 10 GdCdSb 9 is very low, leading to a remarkably high-power factor PF of 23.2 μW/cm·K 2 at 460 K. Furthermore, the extraordinary PF value in this material, higher than those of the currently known state-of-the-art materials within the same temperature range, suggests that the Ca 10 RECdSb 9 material system (RE = rare earth metal) could serve as a viable playground to harnessing new efficient thermoelectric generators.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Materials design, synthesis, and transport properties of disordered rare-earth Zintl bismuthides with the anti -Th 3 P 4 structure type

The synthesis, structural elucidation, and transport properties of the extended series Ca 4–x RE x Bi 3 (RE = Y, La–Nd, Sm, Gd–Tm, and Lu; x ≈ 1) and Ca 4–x RE x Bi 3–δ Sb δ (RE = La, Ho, Er, and Lu; x ≈ 1, δ ≈ 1.5) are presented. Structural elucidation is based on single-crystal X-ray diffraction data and confirms the chemical drive of Ca4Bi3 with the cubic anti-Th 3 P 4 structure type (space group I4 ¯3d, no. 220, Z = 4) into a Zintl phase by the introduction of trivalent rare-earth atoms. The structure features complex bonding, heavy elements, and electron count akin to that of valence-precise semiconductors, making it an ideal target for thermoelectrics development. Introducing crystallographic site disorders at the cation site for the Ca 4–x RE x Bi 3 phase and both the cation and anion sites for the Ca 4–x RE x Bi 3–δ Sb δ phase brings about additional desirable characteristics for thermoelectric materials in the context of tuning knobs for lowering thermal conductivity. Electronic structure calculations of idealized Ca 3 YBi 3 and Ca 3 LaBi 3 compounds indicate the opening of indirect bandgaps at the Fermi level with magnitudes Eg = 0.38 eV and 0.57 eV, respectively. The electrical resistivity ρ(T) of some of the investigated phases measured on single crystals evolve in a metallic manner with magnitudes of order 1.4 mΩ cm near 500 K, thus supporting the notion of a degenerate semiconducting state, with the temperature dependence of the Seebeck coefficient α(T) suggesting the p-type behavior. Furthermore, the low electrical resistivity and the realization of a degenerate semiconducting state in the title phases present a window of opportunity for optimizing their carrier concentrations for enhanced thermoelectric performance.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Polaronic Conductivity in Cr 2 Ge 2 Te 6 Single Crystals

We report that intrinsic 2D ferromagnetic semiconductors are an important class of materials for spin-charge conversion applications. Cr 2 Ge 2 Te 6 retains long-range magnetic order in the bilayer at cryogenic temperatures and shows complex magnetic interactions with considerable magnetic anisotropy. Here, a series of structural, magnetic, X-ray scattering, electronic, thermal transport and first-principles calculation studies are performed, which reveal that localized electronic charge carriers in Cr 2 Ge 2 Te 6 are dressed by the surrounding lattice and are involved in polaronic transport via hopping that is observed via magnetocrystalline anisotropy. This opens the possibility for manipulation of charge transport in Cr 2 Ge 2 Te 6 —based devices by electron–phonon- and spin–orbit coupling-based tailoring of polaron properties.

2D materials↗

DOE OSTI2021

Synthesis and Transport Properties of the Family of Zintl Phases Ca 3 RESb 3 (RE = La–Nd, Sm, Gd–Tm, Lu): Exploring the Roles of Crystallographic Disorder and Core 4f Electrons for Enhancing Thermoelectric Performance

Zintl phases with complex crystal structures have been studied as promising candidate-materials for thermoelectric (TE) applications. Here, we report the syntheses of the family of rare-earth metal Zintl phases with the general formula Ca 4–x RE x Sb 3 (x ≈ 1; RE = La–Nd, Sm, Gd–Tm, Lu). The structural elucidation is based on refinements of single-crystal X-ray diffraction data for 12 unique chemical compositions. The cubic structure is confirmed as belonging to the anti-Th 3 P 4 structure type (space group I4¯3d, no. 220, Z = 4), where the Ca and RE atoms share the same atomic site with ca. 75% and 25% occupancies, respectively. Such crystallographic disordering of divalent Ca and trivalent RE atoms in the structure provides a pathway to intricate bonding. The latter, together with the presence of heavy elements such as Sb and the lanthanides, are expected to enhance the scattering probability of phonons, thereby leading to as low thermal conductivity κ as that of the ordered RE 4 Sb 3 . The drive of the hypothetical parent compound Ca 4 Sb 3 to be stabilized by alloying with rare-earth metals can be understood following the Zintl-Klemm concept, as the resultant formula may be rationalized as (Ca 2+ ) 3 RE 3+ (Sb 3– ) 3 , indicating the realization of closed-shell electronic configurations for all elements. This notion is confirmed by electronic structure calculations, which reveal narrow bandgaps E g = 0.77 and 0.53 eV for Ca 3 LaSb 3 and Ca 3 LuSb 3 , respectively. Additionally, the incorporation of RE atoms into the structure drives the phase into a state of a degenerate semiconductor with dominant hole charge carriers.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Two Polymorphs of BaZn 2 P 2 : Crystal Structures, Phase Transition, and Transport Properties

Here, the novel α-BaZn 2 P 2 structural polymorph has been synthesized and structurally characterized for the first time. Its structure, elu-cidated from single crystal X-ray diffraction, indicates that the compound crystallizes in the orthorhombic α-BaCu 2 S 2 structure type, with unit cell parameters a = 9.7567(14) Å, b = 4.1266(6) Å, and c = 10.6000(15) Å. With β-BaZn 2 P 2 being previously iden-tified as belonging to the ThCr 2 Si 2 family, and with the precedent of structural phase transitions between the α-BaCu 2 S 2 type and the ThCr 2 Si 2 type, the potential for the pattern to be extended to the two different structural forms of BaZn 2 P 2 was explored. Thermal analysis suggest that a first order phase transition occurs at ~1123 K, whereby the low-temperature orthorhombic α-phase transforms to a high-temperature tetragonal β-BaZn 2 P 2 ; the structure of which was also studied and confirmed by single-crystal X-ray diffraction. Preliminary transport properties and band structure calculations indicate that α-BaZn 2 P 2 is a p-type, narrow-gap semiconductor with a direct bandgap (Eg) of 0.5 eV. The Seebeck coefficient, S(T), for the material increases steadily from the room temperature value of 119 µV/K to 184 µV/K at 600 K. The electrical resistivity of α-BaZn 2 P 2 is relatively high, on the order of 40 mΩ·cm, and the ρ(T) dependence shows gradual decrease upon heating. Such behavior is comparable to those of the typical semimetals or degenerate semiconductors. Although the observed values of the as-synthesized samples are not optimal, the carrier concentration can apparently be tuned to fall between the values of metals and semiconductors, thus providing an open window for optimizing this phase towards achieving an enhanced thermoelectric figure of merit zT. The calculated indirect band gap for the β-BaZn 2 P 2 phase is Eg = 0.03 eV which is about an order of magnitude lower than that of α-BaZn 2 P 2 . It is expected that the cage-like structural motif and layered structure possessed by α-BaZn 2 P 2 and β-BaZn 2 P 2 phases, respectively, would promote the realiza-tion of a low thermal conductivity in both compounds.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2021

The Zintl phases A In 2 As 2 (A = Ca, Sr, Ba): new topological insulators and thermoelectric material candidates

Recently, there has been a lot of interest in topological insulators (TIs), being electronic materials, which are insulating in their bulk but with the gapless exotic metallic state on their surface. The surface states observed in such materials behave as a perfect conductor thereby making them more suited for several cutting-edge technological applications such as spintronic devices. Here, we report the synthesis and structural characterization of the Zintl phases AIn 2 As 2 (A = Ca, Sr, Ba), which could become a new class of TIs. Crystal structure elucidation by single-crystal X-ray diffraction reveals that CaIn 2 As 2 and SrIn 2 As 2 are isostructural and crystallize in the EuIn 2 P 2 structure type (space group P6 3 /mmc, no. 194, Z = 2) with unit cell parameters a = 4.1482(6) Å, c = 17.726(4) Å; and a = 4.2222(6) Å, c = 18.110(3) Å, respectively. Their hexagonal structure is made up of alternating [In 2 As 2 ] 2– layers separated by slabs of A 2+ cations. BaIn 2 As 2 on the other hand crystallizes in the monoclinic EuGa 2 P 2 structure type (space group P2/m, no. 10, Z = 4) with unit cell parameters a = 10.2746(11) Å, b = 4.3005(5) Å, c = 13.3317(14) Å and β = 95.569(2)°. This structure is also layered, and it is made up of different type of polyanionic [In 2 As 2 ] 2– units and Ba 2+ cations. The valence electron count for all three compounds adheres to the Zintl-Klemm formalism, and all elements achieve closed-shell electronic configurations. Bulk electronic structure calculations indicate the opening of a bandgap E g ~ 0.03 eV (CaIn 2 As 2 and Sr 2 In 2 As 2 ), and E g ~0.21 eV (BaIn 2 As 2 ) in the absence of strain and spin–orbit coupling (SOC). Furthermore, these results argue in favor of the realization of a nontrivial topological insulator state under the influence of tensile strain and SOC. Preliminary transport properties on BaIn 2 As 2 are suggestive of a degenerate p-type semiconductor—a behavior which is sought after in thermoelectric (TE) materials. Since both TIs and excellent TE materials are known to favor the same material properties such as narrow bandgap, heavy elements, and strong SOC, these three Zintl phases are also projected as candidates TE materials.

36 MATERIALS SCIENCE↗