Engineering topics

Oks, E M

Publications and source records attributed to Oks, E M.

9 records

DOE OSTI2012

On the electrical conductivity of Ti-implanted alumina

Ion implantation of metal species into insulators provides a tool for the formation of thin, electrically conducting, surface layers with experimenter-controlled resistivity. High energy implantation of Pt and Ti into alumina accelerator components has been successfully employed to control high voltage surface breakdown in a number of cases. In the work described here we have carried out some basic investigations related to the origin of this phenomenon. By comparison of the results of alumina implanted with Ti at 75 keV with the results of prior investigations of polymers implanted with Pt at 49 eV and Au at 67 eV, we describe a physical model of the effect based on percolation theory and estimate the percolation parameters for the Ti-alumina composite. We estimate that the percolation dose threshold is about 4 x 10{sup 16} cm{sup -2} and the maximum dose for which the system remains an insulator-conductor composite is about 10 x 10{sup 16} cm{sup -2}. The saturation electrical conductivity is estimated to be about 50 S/m. We conclude that the observed electrical conductivity properties of Ti-implanted alumina can be satisfactorily described by percolation theory.

36 MATERIALS SCIENCE↗

DOE OSTI2012

Low-energy, high-current, ion source with cold electron emitter

An ion source based on a two-stage discharge with electron injection from a cold emitter is presented. The first stage is the emitter itself, and the second stage provides acceleration of injected electrons for gas ionization and formation of ion flow (<20 eV, 5 A dc). The ion accelerating system is gridless; acceleration is accomplished by an electric field in the discharge plasma within an axially symmetric, diverging, magnetic field. The hollow cathode electron emitter utilizes an arc discharge with cathode spots hidden inside the cathode cavity. Selection of the appropriate emitter material provides a very low erosion rate and long lifetime.

43 PARTICLE ACCELERATORS↗

DOE OSTI2012

Upgraded vacuum arc ion source for metal ion implantation

Vacuum arc ion sources have been made and used by a large number of research groups around the world over the past twenty years. The first generation of vacuum arc ion sources (dubbed ''Mevva,'' for metal vapor vacuum arc) was developed at Lawrence Berkeley National Laboratory in the 1980s. This paper considers the design, performance parameters, and some applications of a new modified version of this kind of source which we have called Mevva-V.Ru. The source produces broad beams of metal ions at an extraction voltage of up to 60 kV and a time-averaged ion beam current in the milliampere range. Here, we describe the Mevva-V.Ru vacuum arc ion source that we have developed at Tomsk and summarize its beam characteristics along with some of the applications to which we have put it. We also describe the source performance using compound cathodes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2012

Generation of high charge state metal ion beams by electron cyclotron resonance heating of vacuum arc plasma in cusp trap

A method for generating high charge state heavy metal ion beams based on high power microwave heating of vacuum arc plasma confined in a magnetic trap under electron cyclotron resonance conditions has been developed. A feature of the work described here is the use of a cusp magnetic field with inherent ''minimum-B'' structure as the confinement geometry, as opposed to a simple mirror device as we have reported on previously. The cusp configuration has been successfully used for microwave heating of gas discharge plasma and extraction from the plasma of highly charged, high current, gaseous ion beams. Now we use the trap for heavy metal ion beam generation. Two different approaches were used for injecting the vacuum arc metal plasma into the trap - axial injection from a miniature arc source located on-axis near the microwave window, and radial injection from sources mounted radially at the midplane of the trap. Here, we describe preliminary results of heating vacuum arc plasma in a cusp magnetic trap by pulsed (400 {mu}s) high power (up to 100 kW) microwave radiation at 37.5 GHz for the generation of highly charged heavy metal ion beams.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2012

High-energy metal ion implantation for reduction of surface resistivity of alumina ceramic

In this work, the possibility to increase the surface conductivity of ceramic insulators through their treatment with accelerated metal ion beams produced by a MevvaV.Ru vacuum arc source is demonstrated. The increase in surface conductivity is made possible due to experimental conditions in which an insulated collector is charged by beam ions to a potential many times lower than the accelerating voltage, and hence, than the average beam ion energy. The observed effect of charge neutralization of the accelerated ion beam is presumably associated with electrons knocked out of the electrodes of the accelerating system of the source and of the walls of the vacuum chamber by the accelerated ions.

36 MATERIALS SCIENCE↗

DOE OSTI2012

Molecular phosphorus ion source for semiconductor technology

This paper presents results on the generation of molecular phosphorus ion beams in a hot filament ion source. Solid red phosphorous is evaporated mainly as tetra-atomic molecules up to a temperature of 800 deg. C. Thus, one of the main conditions for producing maximum P{sub 4}{sup +} fraction in the beam is to keep the temperature of the phosphorous oven, the steam line and the discharge chamber walls no greater than 800 deg. C. The prior version of our ion source was equipped with a discharge chamber cooling system. The modified source ensured a P{sub 4}{sup +} ion beam current greater than 30% of the total beam current.

43 PARTICLE ACCELERATORS↗

DOE OSTI2012

Electrostatic plasma lens for focusing negatively charged particle beams

We describe the current status of ongoing research and development of the electrostatic plasma lens for focusing and manipulating intense negatively charged particle beams, electrons, and negative ions. The physical principle of this kind of plasma lens is based on magnetic isolation electrons providing creation of a dynamical positive space charge cloud in shortly restricted volume propagating beam. Here, the new results of experimental investigations and computer simulations of wide-aperture, intense electron beam focusing by plasma lens with positive space charge cloud produced due to the cylindrical anode layer accelerator creating a positive ion stream towards an axis system is presented.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2011

Anodization of aluminum and silicon in plasma of a non-self-sustained glow discharge

The results of anodization of aluminum and silicon in an oxygen plasma are presented. The plasma was generated by a non-self-sustained glow discharge with a hollow cathode excited by an electron beam at the oxygen pressure of 20 Pa. The density of the current flowing through the anodized specimen did not exceed 1.5 mA/cm{sup 2}, and its temperature was 200-250 Degree-Sign C. Continuous Al{sub 2}O{sub 3} and SiO{sub 2} films were formed on the aluminum and silicon surfaces. The growth rate of the oxide layers was 150-200 nm/h for Al{sub 2}O{sub 3} and 400-800 nm/h for SiO{sub 2}.

36 MATERIALS SCIENCE↗

DOE OSTI2011

Self-neutralized ion beam

A vacuum arc ion source provides high current beams of metal ions that have been used both for accelerator injection and for ion implantation, and in both of these applications the degree of space charge neutralization of the beam is important. In accelerator injection application, the beam from the ion source may be accelerated further (post-acceleration), redirected by a bending magnet(s), or focused with magnetic or electrostatic lenses, and knowledge of the beam space charge is needed for optimal design of the optical elements. In ion implantation application, any build-up of positive charge in the insulating targets must be compensated by a simultaneous flux of cold electrons so as to provide overall charge neutrality of the target. We show that in line-of-sight ion implantation using a vacuum arc ion source, the high current ion beam carries along its own background sea of cold electrons, and this copious source of electrons provides a ''self-neutralizing'' feature to the beam. Here we describe experiments carried out in order to demonstrate this effect, and we provide an analysis showing that the beam is space-charge-neutralized to a very high degree.

43 PARTICLE ACCELERATORS↗