Depolarization Dynamics in a Strongly Interacting Solid-State Spin Ensemble
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Engineering topics
Publications and source records attributed to Onoda, Shinobu.
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Effects of displacement damage and ionization damage induced by gamma irradiation on the dark current and impulse response of a high-bandwidth low breakdown voltage Si Avalanche Photodiode has been investigated using picosecond laser microscopy. At doses as high as 10Mrad (Si) minimal alteration in the impulse response and bandwidth were observed. However, dark current measurements also performed with and without biased irradiation exhibit anomalously large damage factors for applied biases close to breakdown. The absence of any degradation in the impulse response is discussed as are possible mechanisms for higher dark current damage factors observed for biased irradiation.
We illustrate inherent differences between Single Event Transients generated by an above bandgap picosecond lasers and MeV heavy ions by comparing transient currents collected with an ion microbeam and picosecond laser with varying track waist.