Design and development of a robust ATP subsystem for the Altair UAV-to-Ground lasercomm 2.5 Gbps demonstration
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Engineering topics
Publications and source records attributed to Ortiz, G. G..
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A robust acquisition, tracking and pointing (ATP) subsystem is being developed for the 2.5 Gigabit per second (Gbps) Unmanned-Aerial-Vehicle (UAV) to ground free-space optical communications link project.
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In this paper, we propose a new scheme of compensating the atmospheric induced fading effects using inertial sensors.
Optical communication technologies are being developed to support multi-gigabit/sec links that encompass the LEO-to-GEO and GEO-to-GROUND communication system.
Communication links with multi-gga-bits per sec (Gbps) data-rates depicting both LEO-GEO and GEO-to-Ground optical communications were characterized in the laboratory.
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In this paper, we will present the concept of accelerometer-assisted tracking, error analysis, and progress made on its implementations.
A model for the Precise Acquisition, Tracking and Pointing (ATP) system will be discussed and experimental performance data will be presented.
This paper presents the design and preliminary results of a custom high-speed CCD camera utilizing a Texas Instruments TC237 CCD imager chip with sub-frame window read out.
Free-Space Optical Communications requires precise, stable laser pointing to maintain operating conditions. This paper also describes the software and hardware implementation of Fine Pointing Control based on the Optical Communications Demonstrator architecture.
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Noise temperature measurements of an 8440-MHz ultralow noise maser amplifier (ULNA) have been performed at subatmospheric, liquid-helium temperatures. The traveling-wave maser was operated while immersed in a liquid helium bath. The lowest input noise temperature measured was 1.43 +/- 0.16 K at a physical temperature of 1.60 K. At this physical temperature, the observed gain per centimeter of ruby was 4.9 dB/cm. The amplifier had a 3-dB bandwidth of 76 MHz.
The cryogenic noise temperature performance of a two-stage and a three-stage 32 GHz High Electron Mobility Transistor (HEMT) amplifier was evaluated. The amplifiers employ 0.25 micrometer conventional AlGaAs/GaAs HEMT devices, hybrid matching input and output microstrip circuits, and a cryogenically stable dc biasing network. The noise temperature measurements were performed in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K down to 12 K. Across the measurement band, the amplifiers displayed a broadband response, and the noise temperature was observed to decrease by a factor of 10 in cooling from 300 K to 15 K. The lowest noise temperature measured for the two-stage amplifier at 32 GHz was 35 K with an associated gain of 16.5 dB, while the three-stage amplifier measured 39 K with an associated gain of 26 dB. It was further observed that both amplifiers were insensitive to light.