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Oyafuso, F.

Publications and source records attributed to Oyafuso, F..

At least 19 records

Study of strain boundary conditions and GaAs buffer sizes in InGaAs quantum dots

NEMO 3-D has been developed for the simulation of electronic structure in self-assembled InGaAs quantum dots on GaAs substrates. Typical self-assembled quantum dots in that material system contain about 0.5 to 1 million atoms. Effects of strain by the surrounding GaAs buffer modify the electronic structure inside the quantum dot significantly and a large GaAs buffer must be included in the strain and electronic structure.

transport tunneling quantum