Temperature-resilient superelasticity in monazite-structured rare earth orthophosphate ceramics
Not Available
Afful, Henry Q. (ORCID:0000000311084425)↗
Engineering topics
Packard, Corinne E.
Publications and source records attributed to Packard, Corinne E..
Planarizing Spalled GaAs(100) Surfaces by MOVPE Growth
III-V photovoltaic devices have demonstrated remarkable performance in many applications, and spalling is a promising technique for reducing device costs by recovering the substrate for reuse. In this study, we investigate the in situ planarization of A-directionally spalled GaAs(100) substrates using metal-organic vapor phase epitaxy (MOVPE) grown C:GaAs with CCl4 as the carbon source. We have characterized the (100)-oriented growth for various CCl4 flow rates and observed that the CCl4 or its by-products promote material diffusion from the facet tops to the underlying valleys. For facets with a height of 5 ..mu..m on a substrate with an A-spall and 6 degreesB -offcut, it took 7 ..mu..m of C:GaAs to planarize the substrate. For a similar sample, with a 6 degreesA -offcut, it required 2 ..mu..m of growth to fill the valleys but there were remnant facets.
III-V↗
Planarizing Spalled GaAs(100) Surfaces by MOVPE Growth
III-V photovoltaic devices have demonstrated exceptional performance across various applications, with controlled crystal fracturing, known as controlled spalling, emerging as a promising method to reduce costs by enabling substrate reuse. Spalling GaAs(100) substrates, a commonly used substrate in III-V photovoltaics, results in faceted ridges that must be planarized to grow high-quality photovoltaic devices. Here, in this study, we demonstrate that a GaAs(100) wafer offcut toward [$0\bar{11}$] and spalled toward [$011$] can be efficiently planarized by growing C:GaAs by metal-organic vapor phase epitaxy (MOVPE) on the surface, with up to 95% of the nominally deposited material used to fill the valleys between ridges. We find that reducing the offcut to 2° enhances the planarizing capability of C:GaAs. A surface morphology model indicates that the density of surface dangling bonds significantly influences the growth evolution of undoped GaAs surfaces. In contrast, the model suggests that the effectiveness of C:GaAs as a smoothing layer stems from modifying the atomic surface structure and, consequently, the associated sticking coefficients of the facets, which can alter the evolution of surface morphology. Our findings provide guidelines for the epitaxial planarization of semiconductor surfaces and improve the understanding of MOVPE growth on nonplanar surfaces.
14 SOLAR ENERGY↗
Improving Performance of III-V Solar Cells Grown on Spalled Germanium with Ex Situ Substrate Planarization
Controlled spalling allows removal of devices and provides an opportunity for cost reduction through substrate reuse. However, the fracture-based process can leave behind morphological surface features, notably river lines, that can disrupt epitaxial growth and degrade device performance. We investigate the viability of various wet etch chemistries to planarize river lines to ensure high-quality device growth and performance without mechanical repolishing, and so maintain a route towards cost-effective reuse. Etching in a HF: HNO 3 :CH 3 COOH solution effectively planarizes river lines and produces a surface that yields devices with equivalent performance to those grown on epi-ready Ge wafer surfaces. Further studies will focus on optimizing etch composition, temperature, and time to minimize material removal while maintaining a suitable surface for high-quality epitaxy.
germanium↗
24% Single-Junction GaAs Solar Cell Grown Directly on Growth-Planarized Facets Using Hydride Vapor Phase Epitaxy
A 24%-efficient single-junction GaAs solar cell grown directly on a faceted, spalled (100) GaAs substrate after in situ planarization growth by hydride vapor phase epitaxy (HVPE) is achieved. Controlled spalling, a promising low-cost substrate reuse technique, produces large facets in (100)-oriented GaAs substrates due to the orientation of the fracture planes used for lift-off. Planarization by HVPE offers a path toward direct use of these spalled substrates without costly polishing steps. In this report the growth rate anisotropy enabling planarization arising from diffusion and differences in the adsorption of growth species on {n11}B-type facets relative to (100) is determined. Consecutive planarization and device growth that results in a solar cell with a minimal performance difference relative to a control cell grown on an epitaxy-ready substrate are demonstrated. These results show that controlled spalling coupled with HVPE planarization is a viable pathway for lowering the cost of III-V photovoltaics.
14 SOLAR ENERGY↗
Metallic glass coating material
A metallic glass coating material is composed of an alloy of Fe, B, and one of the metals Nb, Mo, Zr, or W. The ratios of Fe, B, and the metal are predetermined using machine learning predictions and high-throughput experiments. In one example, the material is an alloy of Fe, Nb, Mo and B, of the form Fe x (Nb, Mo) y B z , where x is in the range 18-28, y is in the range 35-45, and z is in the range 32-42. In another example, the material may be the alloy Fe 23 (Nb, Mo) 40 B 37 . The alloy may be doped with Zr and/or W, where the Zr and/or W comprises at most 10% of the alloy.
Mehta, Apurva↗
Light-trapping structures fabricated in situ for ultrathin III-V solar cells
Here, we describe a fully in situ method of fabricating light-scattering structures on III-V materials that generates a rough morphology via vapor phase etching and redeposition. Fully in situ methods support higher industrial throughput by utilizing the growth reactor to generate the light-trapping structures after device growth without removal from the reactor. We use HCl and PH 3 to etch and redeposit scattering morphologies on Ga 0.5 In 0.5 P in a dynamic hydride vapor phase epitaxy (D-HVPE) reactor. We show that the addition of PH 3 leads to redeposition during the vapor phase HCl etching of Ga 0.5 In 0.5 P and that HCl flow rate and time exposed to HCl-PH 3 each independently cause a linear increase in the redeposited feature size, indicating that redeposition proceeds by island growth in a III-Cl-limited, hydride-enhanced HVPE regime. Auger electron spectroscopy and scanning transmission electron microscopy with energy dispersive spectroscopy (STEM-EDS) reveal redeposition to be highly Ga-rich GaInP, i.e., Ga(In)P. The Ga-rich nature of the redeposition results from the higher thermodynamic driving force for Ga incorporation than for In during HVPE growth and the difference in the volatility of the III-Cl etch products. The resulting morphologies have high broadband scattering, as determined by normal specular reflectance and integrating sphere measurements, indicating effectiveness as light-scattering structures. In a 270-nm-thick GaAs photovoltaic device with a textured back surface, we achieve a 4.9% increase in short circuit current density (J SC ) without any loss in open-circuit voltage (V OC ) relative to a planar control using only a 60 s in situ texturing treatment.
14 SOLAR ENERGY↗