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Pal, Anna Maria

Publications and source records attributed to Pal, Anna Maria.

Emittance Measurements Relevant to a 250 W(sub t) Class RTPV Generator for Space Exploration

A proposed 250 Wt Radioisotope Thermophotovoltaic (RTPV) power system for utilization in lunar exploration and the subsequent exploration of Mars is described. Details of emitter selection are outlined for use in a maintenance free power supply that is productive over a 14-year mission life. Thorough knowledge of a material s spectral emittance is essential for accurate modeling of the RTPV system. While sometimes treated as a surface effect, emittance involves radiation from within a material. This creates a complex thermal gradient which is a combination of conductive and radiative heat transfer mechanisms. Emittance data available in the literature is a valuable resource but it is particular to the test sample s physical characteristics and the test environment. Considerations for making spectral emittance measurements relevant to RTPV development are discussed. Measured spectral emittance data of refractory emitter materials is given. Planned measurement system modifications to improve relevance to the current project are presented.

Wolford, Dave↗

Scanning Tunneling Optical Resonance Microscopy Developed

The ability to determine the in situ optoelectronic properties of semiconductor materials has become especially important as the size of device architectures has decreased and the development of complex microsystems has increased. Scanning Tunneling Optical Resonance Microscopy, or STORM, can interrogate the optical bandgap as a function of its position within a semiconductor micro-structure. This technique uses a tunable solidstate titanium-sapphire laser whose output is "chopped" using a spatial light modulator and is coupled by a fiber-optic connector to a scanning tunneling microscope in order to illuminate the tip-sample junction. The photoenhanced portion of the tunneling current is spectroscopically measured using a lock-in technique. The capabilities of this technique were verified using semiconductor microstructure calibration standards that were grown by organometallic vapor-phase epitaxy. Bandgaps characterized by STORM measurements were found to be in good agreement with the bulk values determined by transmission spectroscopy and photoluminescence and with the theoretical values that were based on x-ray diffraction results.

Bailey, Sheila G.↗