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Pan, Dee-Son

Publications and source records attributed to Pan, Dee-Son.

Fundamental and subharmonic excitation for an oscillator with several tunneling diodes in series

Connecting several tunneling diodes in series shows promise as a method for increasing the output power of these devices as millimeter-wave oscillators. However, due to the negative differential resistance (NDR) region in the dc I-V curve of a single tunneling diode, a circuit using several devices connected in series, and biased simultaneously in the NDR region, is dc unstable. Because of this instability, an oscillator with several tunneling diodes in series has a demanding excitation condition. Excitation using an externally applied RF signal is one approach to solving this problem. This is experimentally demonstrated using an RF source, both with frequency close to as well as with frequency considerably lower than the oscillation frequency. Excitation by an RF (radio frequency) source with a frequency as low as one sixth of the oscillation frequency was demonstrated in a proof-of-principle experiment at 2 GHz, for an oscillator with two tunnel diodes connected in series. Strong harmonics of the oscillation signal were generated as a result of the highly nonlinear dc I-V curve of the tunnel diode and a large signal oscillator design. Third harmonic output power comparable to that of the fundamental was observed in one oscillator circuit. If submillimeter wave resonant-tunneling diodes (RTD's) are used instead of tunnel diodes, this harmonic output may be useful for generating signals at frequencies well into the terahertz range.

SUBHARMONIC EXCITATION↗

Anomalous Polarization May Improve Infrared Detectors

New configurations proposed for quantum-well devices. Simplifies alignment, increases sensitivity, and opens up more possibilities in design of quantum-well detectors of infrared radiation. In detector made according to proposed concept, light incident broadside on front surface absorbed. No special waveguide structures required.

Yang, Chan-Lon↗

Advantages of an indirect semiconductor quantum well system for infrared detection

The infrared intersubband absorption process in quantum well systems with anisotropic bulk effective masses, which usually occurs in indirect semiconductors was analyzed. It is found that the anisotropic effective mass can be utilized to provide allowed intersubband transitions at normal incidence to the quantum well growth direction. This transition is known to be forbidden for cases of isotropic effective mass. This property can be exploited for infrared sensor application of quantum well structures by allowing direct illumination of large surface areas without using special waveguide structures. The 10-micron intersubband absorption in quantum wells made of the silicon-based system Si/Si(1-x)Ge(x) was calculated. It is found that it is readily possible to achieve an absorption constant of the order of 10,000/cm in these Si quantum wells with current doping technology.

Yang, Chan-Lon↗

Intersubband absorption of silicon-based quantum wells for infrared imaging

The 10-micron intersubband absorption in quantum wells made of the silicon-based system, Si/Si(1-x)Ge(x), has been calculated. The necessary details of the effective-mass anisotropy are included in the present analysis. It is found that it is readily possible to achieve an absorption constant of order of 10,000/cm in Si quantum wells with current doping technology. For 110-line and 111-line growth directions, a further advantage of Si quantum wells is pointed out, namely, an allowed absorption at normal incidence due to the anisotropic effective mass in Si.

Yang, Chan-Ion↗