Engineering topics

Pardue, Tyler N.

Publications and source records attributed to Pardue, Tyler N..

6 records

DOE OSTI2023

Ferroelectricity and superconductivity in strained Eu x Sr 1 – x TiO 3 films

The superconducting transition of SrTiO 3 can be influenced by tuning its ferroelectric transition, but the underlying reasons remain poorly understood. Here, we investigate compressively strained, Sm-doped films of Eu x Sr 1-x TiO 3 that were grown by molecular beam epitaxy to determine the effect of alloying with Eu on both superconductivity and ferroelectricity, both of which are present in strained SrTiO 3 films. Remarkably, superconductivity survives up to x = 0.14. Films at the lowest alloy concentration studied here, x = 0.09, exhibit no suppression of their superconducting transition temperature, but a strong reduction of the upper critical field (H c2 ), compared to non-alloyed, strained SrTiO 3 films. In addition, these films lack the sharp ferroelectric transition that appears in films without Eu in second harmonic generation measurements. Here, we postulate that Eu-alloying causes a crossover from a globally ordered ferroelectric state to one with only short-range polar order. We discuss the connection between the loss of global polar order and the change in the superconducting properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

Controlling and visualizing Dirac physics in topological semimetal heterostructures

A bulk crystal of cadmium arsenide is a three-dimensional Dirac semimetal, but, in a thin film, it can behave like a three-dimensional topological insulator. This tunability provides unique opportunities to manipulate and explore a topological insulator phase. However, an obstacle to engineering such tunability is the subtlety of transport-based discriminants for topological phases. In this work, the quantum capacitance of cadmium arsenide–based heterostructures provides two direct experimental signatures of three-dimensional topological insulator physics: an insulating three-dimensional bulk and a Landau level at zero energy that does not disperse in a magnetic field. We proceed to join our ability to see these fingerprints of the topological surface states with flexibility afforded by our epitaxial heterostructures to demonstrate a route toward controlling the energy of the Dirac nodes on each surface. These results point to new avenues for engineering topological insulators based on cadmium arsenide.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Similarity in the critical thicknesses for superconductivity and ferroelectricity in strained SrTiO 3 films

The possible connection between superconductivity and polar order in SrTiO 3 has been discussed extensively in the recent literature. Here, the thickness dependence of the superconducting and ferroelectric transitions in strained, epitaxial films of SrTiO 3 films is studied. Both superconductivity and ferroelectricity are absent in thinner films (25 nm and below). Here, we discuss the possible origins of the thickness dependence of both phenomena.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2021

Thickness-independent transport in thin (001)-oriented cadmium arsenide films

The three-dimensional Dirac semimetal is a parent phase for a variety of topological phases that can be generated by tuning parameters in material growth or device operation. Notably, it has recently been found that cadmium arsenide, which is ordinarily a three-dimensional Dirac semimetal, can nevertheless realize a three-dimensional topological insulator in (001)-oriented films about 50-nm thick. In this work, we study the quantum Hall effect in thin (001)-oriented cadmium arsenide films, their thickness ranging from 12 to 24 nm. When the carrier density is kept approximately constant across the different films, quantum transport reveals an identical underlying picture. The result is shown to be consistent with the transport's origin in the surface states of a three-dimensional topological insulator, but problematic for a perspective in which the quantum Hall effect originates from the confined subbands of the bulk band structure. As a result, these thin-film results complement previous studies of the quantum Hall effect in 50-nm-thick films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2021

Controlling the symmetry of cadmium arsenide films by epitaxial strain

Epitaxial strains offer unique opportunities to obtain topological states in thin films and heterostructures that do not exist in their bulk counterparts. Here, we investigate the point group symmetries of coherently strained films of cadmium arsenide (Cd 3 As 2 ), a prototype three-dimensional Dirac semimetal, by convergent beam electron diffraction. We report a loss of the fourfold rotational axis and adoption of the orthorhombic mmm point group in (112)-oriented films under biaxial compressive stress. (001)-oriented Cd 3 As 2 films that are under a small biaxial tensile stress retain the fourfold rotational symmetry that protects the bulk nodes but adopt the non-centrosymmetric 4mm point group symmetry. This, in turn, suggests that (001) films adopt a different crystal structure in biaxial tension, one that differs in the arrangement of the ordered Cd vacancies that are an inherent feature of the crystal structure of Cd 3 As 2 and that are key to its nodal electronic structure. Density functional theory calculations confirm the experimental findings of the stability of the non-centrosymmetric structure under biaxial tension, whereas the centrosymmetric structure is stable under biaxial compression. The results show that bulk Cd 3 As 2 is already close to structural instability and showcase the extraordinary tunability of the topological states of Cd 3 As 2 .

36 MATERIALS SCIENCE↗

DOE OSTI2020

Carrier mobilities of (001) cadmium arsenide films

We investigate (001)-oriented films of the topological semimetal cadmium arsenide (Cd 3 As 2 ) grown by molecular beam epitaxy on lattice-matched III–V Al x In 1-x Sb buffer layers. Magnetotransport studies and analysis of thin film microstructures are used to determine the influence of dislocations on their carrier mobilities. We show that only a minority of the threading dislocations present in the buffer layers extend into the Cd 3 As 2 films. Threading dislocations are shown to reduce the mobilities of carriers residing in the topological surface states, while bulk transport was unaffected by a change in the dislocation density across an order of magnitude. Thick (001) Cd 3 As 2 films exhibit electron mobilities of up to 41 000 cm 2 V -1 s -1 at 2 K. The results provide insights into the influence of extended defects on the transport properties of a prototype topological semimetal.

36 MATERIALS SCIENCE↗