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Park, J. S.

Publications and source records attributed to Park, J. S..

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

PMT calibration for the JSNS^2-II far detector with an embedded LED system

The JSNS^2-II (the second phase of JSNS^2, J-PARC Sterile Neutrino Search at J-PARC Spallation Neutron Source) is an experiment aimed at searching for sterile neutrinos. Here, this experiment has entered its second phase, employing two liquid scintillator detectors located at near and far positions from the neutrino source. Recently, the far detector of the experiment has been completed and is currently in the calibration phase. The following properties of all functioning Photo-Multiplier-Tubes (PMTs) to detect the neutrino events in the far detector have been calibrated: PMT gain, its dependence of supplied High Voltage (HV), Peak-to-Valley (PV), and signal timing. This paper presents a detailed description of the calibration process utilizing the LED system. The LED system of the far detector uses two Ultra-Violet (UV) LEDs, which are effective in calibrating all of the PMTs at once. The UV light is converted into the visible light wavelengths inside liquid scintillator via the wavelength shifters, providing pseudo-isotropic light. To achieve a good energy resolution for physics events, a relative gain adjustment of up to 10% is required for all functioning PMTs. This will be achieved using the HV curves measured and the results of the LED calibration. The Peak-to-Valley (PV) ratio values, which distinguish the single photo-electron signal from the pedestal, are similar to those from the production company. Additionally, the precision of the PMT signal timing is measured to be 2.1 ns. This meets the event reconstruction requirement of 10 ns.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Study on the accidental background of the JSNS$^2$ experiment

JSNS 2 (J-PARC Sterile Neutrino Search at J-PARC Spallation Neutron Source) is an experiment that searches for sterile neutrinos via the observation of $\overline{v}$ μ → $\overline{v}$ e appearance oscillations using muon decay-at-rest neutrinos. The JSNS 2 experiment performed data taking from 2021. In this manuscript, a study of the accidental background is presented. The rate of the accidental background is (9.29 ± 0.39) x 10 –8 /spill with 0.75 MW beam power and comparable to the expected number of signal events.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

The acrylic vessel for JSNS 2 -II neutrino target

The JSNS 2 (J-PARC Sterile Neutrino Search at J-PARC Spallation Neutron Source) is an experiment designed for the search for sterile neutrinos. The experiment is currently at the stage of the second phase named JSNS 2 -II with two detectors at near and far locations from the neutrino source. One of the key components of the experiment is an acrylic vessel, that is used for the target volume for the detection of the anti-neutrinos. Here, the specifications, design, and measured properties of the acrylic vessel are described.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS1996

Long Wavelength 256 X 256 Quantum Well Infrared Photodetector Portable Camera

In this paper, we discuss the development of very sensitive long wavelength infrared (LWIR) GaAs/AlGal-xAs Quantum well infrared photodetectors (QWIPS), fabrication of random reflectors for efficient light coupling, and the demonstration of a LWIR 256 X 256 focal plane array imaging camera. Excellent imagery, with a noise equivalent differential temperature (NE-delta-T) of 25 mK has been achieved.

long wavelength inrared photodetectors random refl↗
NASA NTRS1994

Design and performance of very long-wavelength GaAs/Al(x)Ga(1-x)As quantum-well infrared photodetectors

We present an extensive and detailed study of very long wavelength quantum well infrared photodetectors covering the spectral region between 14 and 20 micrometers. Measurements were made on seven different molecular beam epitaxy grown samples having different well widths and barrier heights. In this study we combine experimental results with theoretical analysis and focus on the relationship between the quantum well structure and detector performance, i.e., responsivity, dark current, dynamic resistance, noise current, optical-gain, and detectivity. These results provide the basis for further optimization, and the detector parameters needed for the design of the readout circuit for focal plane arrays.

Sarusi, G.↗
NASA NTRS1994

High Performance InGaAs/GaAs Quantum Well Infrared Photodetectors

We have measured the optical and transport properties of In(0.2)Ga(0.8)As/GaAs quantum well infrared photodetectors based on bound-to-bound, bound-to-quasibound, and bound-to-continuum intersubband transitions. Excellent hot electron transport and high detectivity D*=1.8 x 1O(exp 10) cm square root of Hz/W (at lambda(sub p)=16.7 microns) were achieved at temperature T=40 K.

Gunapala, S. D.↗
NASA NTRS1994

Sixteen micrometer Infrared Hot Electron Transistor

ABSTRACT. We have demonstrated a bound to continuum state GaAs/Al(x)Ga(1-x)As infrared hot electron transistor which has a peak response at lambda(sub p) = 16.3 micrometers. An excellent photo-current transfer ratio of alpha(sub p) = 0.12 and very low dark current transfer ratio of alpha(sub d) = 7.2 x 10(exp 5) is achieved at a temperature of T = 60 K.

Gunapala, S. D.↗
NASA NTRS1994

Long-Wavelength Stacked SiGe/Si Heterojunction Internal Photoemission Infrared Detectors Using Multiple SiGe/Si Layers

Utilizing low temperature silicon molecular beam epitaxy (MBE) growth, long-wavelength stacked SiGe/Si heterojunction internal photoemission (HIP) infrared detectors with multiple SiGe/Si layers have been fabricated and demonstrated. Using an elemental boron source, high doping concentrations (approximately equal to 4 x 10(sup 20) cm(sup -3)) has been achieved and high crystalline quality multiple Si(sub 0.7)Ge(sub 0.3)/Si layers have been obtained. The detector structure consists of several periods of degenerately boron doped (approximately equal to 4 x 10(sup 20) cm(sup -3)) thin (less than or equal to 50 u Si(sub 0.7)Ge(sub 0.3) layers and undoped thick (approximately equal to 300u Si layers. The multiple p(sup +) - Si(sub 0.7)Ge(sub 0.3)/undoped-Si layers show strong infrared absorption in the long-wavelength regime mainly through free carrier absorption. The stacked Si(sub 0.7)Ge(sub 0.3)/Si HIP detectors with p = 4 x 10(sup 20) cm(sup -3) exhibit strong photoresponse at wavelengths ranging from 2 to 20 (micro)m with quantum efficiencies of about 4% and 1.5% at 10 and 15 (micro)m wavelengths, respectively. The detectors show near ideal thermionic-emission limited dark current characteristics.

beam epitaxy↗
NASA NTRS1994

High Performance InGaAs/GaAs Quantum Well Infrared Photodetectors

By increasing the quantum well barrier width, incorporating spacer layers between the contacts and the multi quantum well region, and optimizing the materials growth parameters, we have dramatically reduced the dark current by many orders of magnitude and thereby significantly increased the detectivity.

spacer↗
NASA NTRS1993

16 Micrometer Infrared Hot Electron Transistor

We have demonstrated a bound to continuum state GaAs/Al_xGa_(1-x)As infrared hot electron transistor which has a peak response at theta_p = 16.3 micrometers. An excellent photo-current transfer ratio of alpha_p = 0.12 and very low dark current transfer ratio of alpha_d = 7.2x10^(-5) is achieved at a temperature of T = 60 K.

Gunapala, S. D.↗