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Park, Jewook

Publications and source records attributed to Park, Jewook.

Tailoring Interlayer Coupling in Few-Layer MoS 2 with Stacking Configuration

Here we manipulated the stacking configuration of a few-layer MoS 2 to investigate the impact of interlayer coupling on electrical band engineering. By simultaneously synthesizing two distinct stacking types of MoS2 islands, wedding cake (W) and spiral (S), on the same substrate, we explored layer-dependent electrical properties under identical experimental conditions. We used multiple scanning probe microscopy techniques to map local electronic properties with respect to the number of layers, stacking configurations, and local heterogeneities. First-principles calculations verified the role of distinct interlayer coupling in terms of the interlayer distance. Our findings highlight the critical role of interlayer coupling in applications of transition metal dichalcogenides.

36 MATERIALS SCIENCE↗

Wavefront distortion correction in scanning tunneling microscope image

Here, we report an algorithm to identify and correct distorted wavefronts in atomic resolution scanning tunneling microscope images. This algorithm can be used to correct nonlinear in-plane distortions without prior knowledge of the physical scanning parameters, the characteristics of the piezoelectric actuator, or individual atom positions. The 2D image is first defined as a sum of sinusoidal plane waves, where a nonlinear distortion renders a curve for an otherwise ideal linear wavefront. Using the Fourier transforms of local areas of the image, the algorithm generates a wavefront vector field. The identified wavefronts are subsequently linearized for each plane wave without changing lattice orders, giving rise to distortion corrections. Our algorithm is complementary to conventional post-processing algorithms that require prior detection of real space features, which can also be used to correct nonlinear distortions in 2D images acquired by other microscopy techniques.

47 OTHER INSTRUMENTATION↗

Atomistic Probing of Defect-Engineered 2H-MoTe 2 Monolayers

Point defects dictate various physical, chemical, and optoelectronic properties of two-dimensional (2D) materials, and therefore, a rudimentary understanding of the formation and spatial distribution of point defects is a key to advancement in 2D material-based nanotechnology. In this work, we performed the demonstration to directly probe the point defects in 2H-MoTe 2 monolayers that are tactically exposed to (i) 200 °C-vacuum-annealing and (ii) 532 nm-laser-illumination; and accordingly, we utilize a deep learning algorithm to classify and quantify the generated point defects. We discovered that tellurium-related defects are mainly generated in both 2H-MoTe 2 samples; but interestingly, 200 °C-vacuum-annealing and 532 nm-laser-illumination modulate a strong n-type and strong p-type 2H-MoTe 2 , respectively. While 200 °C-vacuum-annealing generates tellurium vacancies or tellurium adatoms, 532 nm-laser-illumination prompts oxygen atoms to be adsorbed/chemisorbed at tellurium vacancies, giving rise to the p-type characteristic. This work significantly advances the current understanding of point defect engineering in 2H-MoTe 2 monolayers and other 2D materials, which is critical for developing nanoscale devices with desired functionality.

2H-MoTe 2↗

Spin-Dependent Thermoelectric Power of Nanoislands

The Seebeck effect explains the generation of electric voltage as a result of a temperature gradient. Its efficiency, defined as the ratio of the generated electric voltage to the temperature difference, is sensitive to local inhomogeneities that alter the scattering rate and the density of the conduction electrons. Spin-polarized Seebeck tunneling generates a distinct thermovoltage in spin-up and spin-down charge transport channels, which, as a key to spin caloritronics, focuses on transport phenomena related to spin and heat. Here, we report spatially resolved measurement of the spin-dependent thermovoltage in a tunneling junction formed by ferromagnetic Co nanoislands and a Ni tip using spin-dependent scanning tunneling thermovoltage microscopy (SP-STVthM). We resolve the nanoscale thermoelectric powers with respect to spin polarization, nanoisland size, stacking order of Co layers on a Cu substrate, and local sample heterogeneities. The observed thermally generated spin voltages are supported by first-principles and model calculations.

36 MATERIALS SCIENCE↗

Enhancing the local conductivity of Cu films using temperature-assisted agglomerated Cu nanostructures

We investigate the structural and electrical properties of Cu film and reveal their changes as a function of post-annealing temperature. Thermal annealing of a Cu film on a dielectric substrate can improve its crystallinity; however, high-temperature annealing also leads to a morphological transformation that hinders the precise measurement of electrical properties. The enhanced crystallinity of the Cu films is verified with x-ray diffraction as the annealing temperature increases. To examine the electrical properties of the Cu film after the dewetting processes, which promotes the formation of voids and agglomerations, we utilize both conventional micro four-point probe method as well as an advanced four-point probe scanning tunneling microscopy (4P-STM) technique to measure the conductance and evolution of the microscopic structural properties. We could eliminate a deceptive effect of voids with 4P-STM technique, and disclosed a significantly reduced resistivity (1.88 ± 0.07 µΩ∙cm) of Cu nanostructure after post-annealing at 700 °C. We unveiled impact of crystallinity and imperfections of Cu nanostructure, and discussed the critical role of the twin grain boundaries of single-crystalline Cu (1 1 1) on an Al 2 O 3 substrate. We anticipate that understanding the evolution of the structures and the enhanced electrical properties of the post-annealed Cu nanostructures would be important for nanoscale devices where Cu is used as an interconnecting material and could provide a new route to control the plasmonic applications.

36 MATERIALS SCIENCE↗

Visualization and manipulation of magnetic domains in the quasi-two-dimensional material F e 3 GeT e 2

The magnetic domains in two-dimensional layered material Fe 3 GeTe 2 are studied by using a variable-temperature scanning tunneling microscope with a magnetic tip after in situ cleaving of single crystals. A stripy domain structure is revealed in a zero-field-cooled sample below the ferromagnetic transition temperature of 205 K, which is replaced by separate double-walled domains and bubble domains when cooling the sample under a magnetic field of a ferromagnetic Ni tip. The Ni tip can further convert the double-walled domain to a bubble domain pattern as well as move the Neel-type chiral bubble in submicrometer distance. The temperature-dependent evolutions of both zero-field-cooled and field-cooled domain structures correlate well with the bulk magnetization from magnetometry measurements. Furthermore, atomic resolution scanning tunneling images and spectroscopy are acquired to understand the atomic and electronic structures of the material, which are further corroborated by first-principles calculations.

36 MATERIALS SCIENCE↗

Postprocessing Algorithm for Driving Conventional Scanning Tunneling Microscope at Fast Scan Rates

We present an image postprocessing framework for Scanning Tunneling Microscope (STM) to reduce the strong spurious oscillations and scan line noise at fast scan rates and preserve the features, allowing an order of magnitude increase in the scan rate without upgrading the hardware. The proposed method consists of two steps for large scale images and four steps for atomic scale images. For large scale images, we first apply for each line an image registration method to align the forward and backward scans of the same line. In the second step we apply a “rubber band” model which is solved by a novel Constrained Adaptive and Iterative Filtering Algorithm (CIAFA). The numerical results on measurement from copper(111) surface indicate the processed images are comparable in accuracy to data obtained with a slow scan rate, but are free of the scan drift error commonly seen in slow scan data. For atomic scale images, an additional first step to remove line-by-line strong background fluctuations and a fourth step of replacing the postprocessed image by its ranking map as the final atomic resolution image are required. The resulting image restores the lattice image that is nearly undetectable in the original fast scan data.

47 OTHER INSTRUMENTATION↗