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Partovi, Afshin

Publications and source records attributed to Partovi, Afshin.

6 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Spatial light modulation in compound semiconductor materials

Spatial light modulation (22) in a III-V single crystal (12), e.g., gallium arsenide, is achieved using the photorefractive effect. Polarization rotation created by beam coupling is utilized in one embodiment. In particular, information (16)on a control beam (14) incident on the crystal is transferred to an input beam (10), also incident on the crystal. An output beam (18) modulated in intensity is obtained by passing the polarization-modulated input beam through a polarizer (20).

Cheng, Li-Jen↗
NASA NTRS1989

Spatial Modulation Of Light In GaAs

Spatial modulation of light in gallium arsenide demonstrated by transferring image from one of two coherent, crossing beams of light to other one. Technique relies on cross-polarization beam coupling, product of photorefractive effect in GaAs crystal.

Cheng, Li-Jen↗
NASA NTRS1988

Index grating lifetime in photorefractive GaAs

The index grating lifetime in liquid encapsulated Czochralski-grown undoped semi-insulating GaAs was measured using a beam coupling technique. The largest lifetime measure was about 8 s under a read beam intensity of 0.7 mW/sq cm with the grating periodicity being 0.63 microns. The measured value decreases to milliseconds as the read beam intensity and the grating periodicity increase to about 10 mW/sq cm and 4 microns, respectively. This range of grating lifetime in this material is adequate for its use in real-time spatial light modulators, reconfigurable beam steering devices, and dynamic memory elements, for optical computing. In addition, the results suggest that the lifetime is sensitive to residual imperfections in the crystal.

Cheng, Li-Jen↗
NASA NTRS1987

Enhanced beam coupling modulation using the polarization properties of photorefractive GaAs

Observation is reported of a rotation in the polarization of the two photorefractive recording beams in GaAs for a configuration with the internally generated space-charge field along the line 110 crystallographic orientation. This rotation is a result of simultaneous constructive and destructive beam coupling in each beam for the optical electric field components along the two electrooptically induced principal dielectric axes of the crystal. By turning one of the beams on and off, the intensity of the other beam after the crystal and a polarization analyzer can be modulated by as much as 500 percent. This result is of particular importance for optical information processing applications.

Partovi, Afshin↗
NASA NTRS1986

Temperature and intensity dependence of photorefractive effect in GaAs

The photorefractive effect in semi-insulating Cr-doped GaAs as measured by the beam coupling technique was investigated as functions of temperature (295-386 K) and intensity (0.15-98 mW/sq cm of 1.15-micron light beams from a He-Ne laser). Results show that the photorefractive effect deteriorates rapidly over a narrow range of temperature as temperature rises, and that this characteristic temperature increases with the logarithm of beam intensity. The observed phenomenon is attributed to the competing effects of the dark- and light-induced conductivities.

Cheng, Li-Jen↗