Engineering topics

Patterson, Richard

Publications and source records attributed to Patterson, Richard.

At least 19 records

NASA NTRS2011

Operation of a New Half-Bridge Gate Driver for Enhancement - Mode GaN FETs, Type LM5113, Over a Wide Temperature Range

A new commercial-off-the-shelf (COTS) gate driver designed to drive both the high-side and the low-side enhancement-mode GaN FETs, National Semiconductor's type LM5113, was evaluated for operation at temperatures beyond its recommended specified limits of -40 C to +125 C. The effects of limited thermal cycling under the extended test temperature, which ranged from -194 C to +150 C, on the operation of this chip as well as restart capability at the extreme cryogenic and hot temperatures were also investigated. The driver circuit was able to maintain good operation throughout the entire test regime between -194 C and +150 C without undergoing any major changes in its outputs signals and characteristics. The limited thermal cycling performed on the device also had no effect on its performance, and the driver chip was able to successfully restart at each of the extreme temperatures of -194 C and +150 C. The plastic packaging of this device was also not affected by either the short extreme temperature exposure or the limited thermal cycling. These preliminary results indicate that this new commercial-off-the-shelf (COTS) halfbridge eGaN FET driver integrated circuit has the potential for use in space exploration missions under extreme temperature environments. Further testing is planned under long-term cycling to assess the reliability of these parts and to determine their suitability for extended use in the harsh environments of space.

Patterson, Richard↗

NASA NTRS2011

Cryogenic Behavior of the High Temperature Crystal Oscillator PX-570

Microprocessors, data-acquisition systems, and electronic controllers usually require timing signals for proper and accurate operation. These signals are, in most cases, provided by circuits that utilize crystal oscillators due to availability, cost, ease of operation, and accuracy. Stability of these oscillators, i.e. crystal characteristics, is usually governed, amongst other things, by the ambient temperature. Operation of these devices under extreme temperatures requires, therefore, the implementation of some temperature-compensation mechanism either through the manufacturing process of the oscillator part or in the design of the circuit to maintain stability as well as accuracy. NASA future missions into deep space and planetary exploration necessitate operation of electronic instruments and systems in environments where extreme temperatures along with wide-range thermal swings are countered. Most of the commercial devices are very limited in terms of their specified operational temperature while very few custom-made and military-grade parts have the ability to operate in a slightly wider range of temperature. Thus, it is becomes mandatory to design and develop circuits that are capable of operation efficiently and reliably under the space harsh conditions. This report presents the results obtained on the evaluation of a new (COTS) commercial-off-the-shelf crystal oscillator under extreme temperatures. The device selected for evaluation comprised of a 10 MHz, PX-570-series crystal oscillator. This type of device was recently introduced by Vectron International and is designed as high temperature oscillator [1]. These parts are fabricated using proprietary manufacturing processes designed specifically for high temperature and harsh environment applications [1]. The oscillators have a wide continuous operating temperature range; making them ideal for use in military and aerospace industry, industrial process control, geophysical fields, avionics, and engine control. They exhibit low jitter and phase noise, consume little power, and are suited for high shock and vibration applications. The unique package design of these crystal oscillators offers a small ceramic package footprint, as well as providing both through-hole mounting and surface mount options.

Patterson, Richard↗

NASA NTRS2011

Operation of a New COTS Crystal Oscillator - CXOMHT over a Wide Temperature Range

Crystal oscillators are extensively used in electronic circuits to provide timing or clocking signals in data acquisition, communications links, and control systems, to name a few. They are affordable, small in size, and reliable. Because of the inherent characteristics of the crystal, the oscillator usually exhibits extreme accuracy in its output frequency within the intrinsic crystal stability. Stability of the frequency could be affected under varying load levels or other operational conditions. Temperature is one of those important factors that influence the frequency stability of an oscillator; as it does to the functionality of other electronic components. Electronics designed for use in NASA deep space and planetary exploration missions are expected to be exposed to extreme temperatures and thermal cycling over a wide range. Thus, it is important to design and develop circuits that are able to operate efficiently and reliably under in these harsh temperature environments. Most of the commercial-off-the-shelf (COTS) devices are very limited in terms of their specified operational temperature while very few custom-made commercial and military-grade parts have the ability to operate in a slightly wider range of temperature than those of the COTS parts. These parts are usually designed for operation under one temperature extreme, i.e. hot or cold, and do not address the wide swing in the operational temperature, which is typical of the space environment. For safe and successful space missions, electronic systems must therefore be designed not only to withstand the extreme temperature exposure but also to operate efficiently and reliably. This report presents the results obtained on the evaluation of a new COTS crystal oscillator under extreme temperatures.

Patterson, Richard↗

NASA NTRS2010

Evaluation of Fairchild's Gate Drive Optocoupler, Type FOD3150, Under Wide Temperature Operation

An optocoupler is a semiconductor device that is used to transfer a signal between different parts of a circuit that need to be electrically isolated from one another - for example, where a high voltage is to be switched with a low voltage control signal. Optocouplers often can be used in place of relays. These optocouplers utilize an infrared LED (light emitting diode) and a photodetector such as a silicon controlled rectifier or photosensitive silicon diode for the transfer of the electronic signal between components of a circuit by means of a short optical transmission channel. For maximum coupling, the wave-length responses of the LED and the detector should be very similar. In switch-mode power supply applications, optocouplers offer advantages over transformers by virtue of simpler circuit design, reduced weight, and DC coupling capability. The effects of extreme temperature exposure and thermal cycling on the performance of a commercial-off-the-shelf (COTS) optocoupler, Fairchild FOD3150, were evaluated in this work. This 1.0 A output current, high noise immunity gate drive optocoupler utilizes an aluminum gallium arsenide (AlGaAs) LED, is capable of driving most 800V/20A IGBT/MOSFETs, and is suited for fast switching in motor control inverter applications and high performance power systems. Some of the specifications of the isolator chip are listed. The device was evaluated in terms of output response, output rise (t(sub r)) and fall times (t(sub f)), and propagation delays (using a 50% level between input and output during low to high (t(sub PLH)) and high to low (t(sub PLH)) transitions). The output supply current was also obtained. These parameters were recorded at various test temperatures between -190 C and +110 C.

Patterson, Richard↗

NASA NTRS2010

Test Results of Selected Commercial DC/DC Converters under Cryogenic Temperatures - A Digest

DC/DC converters are widely used in space power systems in the areas of power management and distribution, signal conditioning, and motor control. Design of DC/DC converters to survive cryogenic temperatures will improve the power system performance, simplify design, and reduce development and launch costs. In this work, the performance of nine COTS modular, low-tomedium power DC/DC converters was investigated under cryogenic temperatures. The converters were evaluated in terms of their output regulation, efficiency, and input and output currents. At a given temperature, these properties were obtained at various input voltages and at different load levels. A summary on the performance of the tested converters was given. More comprehensive testing and in-depth analysis of performance under long-term exposure to extreme temperatures are deemed necessary to establish the suitability of these and other devices for use in the harsh environment of space exploration missions.

Patterson, Richard↗

NASA NTRS2010

Operation of a Giant Magnetoresistive (GMR) Digital Isolator, Type IL510, Under Extreme Temperatures

A relatively new type of signal isolation based on Giant Magnetoresistive (GMR) technology was investigated for potential use in harsh temperature environments. Operational characteristics of the 2Mbps single channel, IL510-Series commercial-off-the-shelf (COTS) digital isolator chip was obtained under extreme temperature exposure and thermal cycling in the range of -190 C to +120 C. The isolator was evaluated in terms of its output signal delivery and stability, output rise (t(sub r)) and fall times (t(sub f)), and propagation delays at 50% level between input and output during low to high (t(sub PLH)) and high to low (t(sub PHL)) transitions. The device performed very well throughout the entire test temperature range as no significant changes occurred either in its function or in its output signal timing characteristics. The limited thermal cycling, which comprised of 12 cycles between -190 C and +120 C, also had no influence on its performance. In addition, the device packaging underwent no structural damage due to the extreme temperature exposure. These preliminary results indicate that this semiconductor chip has the potential for use in a temperature range that extends beyond its specified regime. Additional and more comprehensive testing, however, is required to establish its operation and reliability and to determine its suitability for long-term use in space exploration missions.

Patterson, Richard↗

NASA NTRS2010

Characterization of Low Noise, Precision Voltage Reference REF5025-HT Under Extreme Temperatures

The performance of Texas Instruments precision voltage reference REF5025-HT was assessed under extreme temperatures. This low noise, 2.5 V output chip is suitable for use in high temperature down-hole drilling applications, but no data existed on its performance at cryogenic temperatures. The device was characterized in terms of output voltage and supply current at different input voltage levels as a function of temperature between +210 C and -190 C. Line and load regulation characteristics were also established at six load levels and at different temperatures. Restart capability at extreme temperatures and the effects of thermal cycling, covering the test temperature range, on its operation and stability were also investigated. Under no load condition, the voltage reference chip exhibited good stability in its output over the temperature range of -50 C to +200 C. Outside that temperature range, output voltage did change as temperature was changed. For example, at the extreme temperatures of +210 C and - 190 C, the output level dropped to 2.43 V and 2.32 V, respectively as compared to the nominal value of 2.5 V. At cryogenic test temperatures of -100 C and -150 C the output voltage dropped by about 20%. The quiescent supply current of the voltage reference varied slightly with temperature but remained close to its specified value. In terms of line regulation, the device exhibited excellent stability between -50 C and +150 C over the entire input voltage range and load levels. At the other test temperatures, however, while line regulation became poor at cryogenic temperatures of -100 C and below, it suffered slight degradation at the extreme high temperature but only at the high load level of 10 mA. The voltage reference also exhibited very good load regulation with temperature down to -100 C, but its output dropped sharply at +210 C only at the heavy load of 10 mA. The semiconductor chip was able restart at the extreme temperatures of -190 C and +210 C, and the limited thermal cycling did not influence its characteristics and had no impact on its packaging as no structural or physical damage was observed.

Patterson, Richard↗

NASA NTRS2010

Evaluation of a High Temperature SOI Half-Bridge MOSFET Driver, Type CHT-HYPERION

Silicon-On-Insulator (SOI) technology utilizes the addition of an insulation layer in its structure to reduce leakage currents and to minimize parasitic junctions. As a result, SOIbased devices exhibit reduced internal heating as compared to the conventional silicon devices, consume less power, and can withstand higher operating temperatures. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a commercial-off-the-shelf (COTS) SOI half-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Patterson, Richard↗

NASA NTRS2009

Evaluation of a Programmable Voltage-Controlled MEMS Oscillator, Type SiT3701, Over a Wide Temperature Range

Semiconductor chips based on MEMS (Micro-Electro-Mechanical Systems) technology, such as sensors, transducers, and actuators, are becoming widely used in today s electronics due to their high performance, low power consumption, tolerance to shock and vibration, and immunity to electro-static discharge. In addition, the MEMS fabrication process allows for the miniaturization of individual chips as well as the integration of various electronic circuits into one module, such as system-on-a-chip. These measures would simplify overall system design, reduce parts count and interface, improve reliability, and reduce cost; and they would meet requirements of systems destined for use in space exploration missions. In this work, the performance of a recently-developed MEMS voltage-controlled oscillator was evaluated under a wide temperature range. Operation of this new commercial-off-the-shelf (COTS) device was also assessed under thermal cycling to address some operational conditions of the space environment

Patterson, Richard↗

NASA NTRS2009

Performance of an SOI Boot-Strapped Full-Bridge MOSFET Driver, Type CHT-FBDR, under Extreme Temperatures

Electronic systems designed for use in deep space and planetary exploration missions are expected to encounter extreme temperatures and wide thermal swings. Silicon-based devices are limited in their wide-temperature capability and usually require extra measures, such as cooling or heating mechanisms, to provide adequate ambient temperature for proper operation. Silicon-On-Insulator (SOI) technology, on the other hand, lately has been gaining wide spread use in applications where high temperatures are encountered. Due to their inherent design, SOI-based integrated circuit chips are able to operate at temperatures higher than those of the silicon devices by virtue of reducing leakage currents, eliminating parasitic junctions, and limiting internal heating. In addition, SOI devices provide faster switching, consume less power, and offer improved radiation-tolerance. Very little data, however, exist on the performance of such devices and circuits under cryogenic temperatures. In this work, the performance of an SOI bootstrapped, full-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Patterson, Richard↗

NASA NTRS2009

Assessment of SOI AND Gate, Type CHT-7408, for Operation in Extreme Temperature Environments

Electronic parts based on silicon-on-insulator (SOI) technology are finding widespread applications due to their ability to operate in harsh environments and the benefits they offer as compared to their silicon counterparts. Due to their construction, they are tailored for high temperature operation and show good tolerance to radiation events. In addition, their inherent design lessens the formation of parasitic junctions, thereby reducing leakage currents, decreasing power consumption, and enhancing speed. These devices are typically rated in temperature capability from -55 C to about +225 C, and their characteristics over this temperature range are documented in data sheets. Since electronics in some of NASA space exploration missions are required to operate under extreme temperature conditions, both cold and hot, their characteristic behavior within the full temperature spectrum must be determined to establish suitability for use in space applications. The effects of extreme temperature exposure on the performance of a new commercial-off-the-shelf (COTS) SOI AND gate device were evaluated in this work. The high temperature, quad 2-inputs AND gate device, which was recently introduced by CISSOID, is fabricated using a CMOS SOI process. Some of the specifications of the CHT-7408 chip are listed in a table. By supplying a constant DC voltage to one gate input and a 10 kHz square wave into the other associated gate input, the chip was evaluated in terms of output response, output rise (t(sub r)) and fall times (tf), and propagation delays (using a 50% level between input and output during low to high (tPLH) and high to low (tPHL) transitions). The supply current of the gate circuit was also obtained. These parameters were recorded at various test temperatures between -195 C and +250 C using a Sun Systems environmental chamber programmed at a temperature rate of change of 10 C/min. In addition, the effects of thermal cycling on this chip were determined by exposing it to a total of 12 cycles between -195 C and +250 C. Following the cycling activity, measurements were performed again at the test temperatures of -195 C, +21 C, and +250 C.

Patterson, Richard↗

NASA NTRS2009

Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures over the range of -190 C to +225 C in terms of its voltage/current characteristic curves. The test temperatures included +22, -50, -100, -150, -175, -190, +50, +100, +150, +175, +200, and +225 C. Limited thermal cycling testing was also performed on the device. These tests consisted of subjecting the transistor to a total of twelve thermal cycles between -190 C and +225 C. A temperature rate of change of 10 C/min and a soak time at the test temperature of 10 minutes were used throughout this work. Post-cycling measurements were also performed at selected temperatures. In addition, re-start capability at extreme temperatures, i.e. power switched on while the device was soaking for a period of 20 minutes at the test temperatures of -190 C and +225 C, was investigated.

Patterson, Richard↗

NASA NTRS2009

Evaluation of Advanced COTS Passive Devices for Extreme Temperature Operation

Electronic sensors and circuits are often exposed to extreme temperatures in many of NASA deep space and planetary surface exploration missions. Electronics capable of operation in harsh environments would be beneficial as they simplify overall system design, relax thermal management constraints, and meet operational requirements. For example, cryogenic operation of electronic parts will improve reliability, increase energy density, and extend the operational lifetimes of space-based electronic systems. Similarly, electronic parts that are able to withstand and operate efficiently in high temperature environments will negate the need for thermal control elements and their associated structures, thereby reducing system size and weight, enhancing its reliability, improving its efficiency, and reducing cost. Passive devices play a critical role in the design of almost all electronic circuitry. To address the needs of systems for extreme temperature operation, some of the advanced and most recently introduced commercial-off-the-shelf (COTS) passive devices, which included resistors and capacitors, were examined for operation under a wide temperature regime. The types of resistors investigated included high temperature precision film, general purpose metal oxide, and wirewound.

Patterson, Richard↗

NASA NTRS2008

Evaluation of Silicon-on-Insulator HTOP-01 Operational Amplifier for Wide Temperature Operation

Electronics capable of operation under extreme temperatures are required in many of NASA space exploration missions. Aerospace and military applications, as well as some terrestrial industries constitute environments where electronic systems are anticipated to be exposed to extreme temperatures and wide-range thermal swings. Electronics that are able to withstand and operate efficiently in such harsh environments would simplify, if not eliminate, traditional thermal control elements and their associated structures for proper ambient operation. As a result, overall system mass would be reduced, design would be simplified, and reliability would be improved. Electronic parts that are built utilizing silicon-on-insulator (SOI) technology are known to offer better radiation-tolerance compared to their conventional silicon counterparts, provide faster switching, and consume less power. They also exhibit reduced leakage current and, thus, they are often tailored for high temperature operation. These attributes make SOI-based devices suitable for use in harsh environments where extreme temperatures and wide thermal swings are anticipated. A new operational amplifier, based on silicon-on-insulator technology and geared for high temperature well-logging applications, was recently introduced by Honeywell Corporation. This HTOP-01 dual precision operational amplifier is a low power device, operates on a single supply, and has an internal oscillator and an external clocking option [1]. It is rated for operation from -55 C to +225 C with a maximum output current capability of 50 mA. The amplifier chip is designed as a 14-pin, hermetically-sealed device in a ceramic package. Table I shows some of the device manufacturer s specifications.

Patterson, Richard↗

NASA NTRS2008

Silicon-On-Insulator (SOI) Devices and Mixed-Signal Circuits for Extreme Temperature Applications

Electronic systems in planetary exploration missions and in aerospace applications are expected to encounter extreme temperatures and wide thermal swings in their operational environments. Electronics designed for such applications must, therefore, be able to withstand exposure to extreme temperatures and to perform properly for the duration of the missions. Electronic parts based on silicon-on-insulator (SOI) technology are known, based on device structure, to provide faster switching, consume less power, and offer better radiation-tolerance compared to their silicon counterparts. They also exhibit reduced current leakage and are often tailored for high temperature operation. However, little is known about their performance at low temperature. The performance of several SOI devices and mixed-signal circuits was determined under extreme temperatures, cold-restart, and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of these devices for use in space exploration missions under extreme temperatures. The experimental results obtained on selected SOI devices are presented and discussed in this paper.

Patterson, Richard↗

NASA NTRS2008

Extreme High and Low Temperature Operation of the Silicon-On-Insulator Type CHT-OPA Operational Amplifier

A new operational amplifier chip based on silicon-on-insulator technology was evaluated for potential use in extreme temperature environments. The CHT-OPA device is a low power, precision operational amplifier with rail-to-rail output swing capability, and it is rated for operation between -55 C and +225 C. A unity gain inverting circuit was constructed utilizing the CHT-OPA chip and a few passive components. The circuit was evaluated in the temperature range from -190 C to +200 C in terms of signal gain and phase shift, and supply current. The investigations were carried out to determine suitability of this device for use in space exploration missions and aeronautic applications under wide temperature incursion. Re-restart capability at extreme temperatures, i.e. power switched on while the device was soaked at extreme temperatures, was also investigated. In addition, the effects of thermal cycling under a wide temperature range on the operation of this high performance amplifier were determined. The results from this work indicate that this silicon-on-insulator amplifier chip maintained very good operation between +200 C and -190 C. The limited thermal cycling had no effect on the performance of the amplifier, and it was able to re-start at both -190 C and +200 C. In addition, no physical degradation or packaging damage was introduced due to either extreme temperature exposure or thermal cycling. The good performance demonstrated by this silicon-on-insulator operational amplifier renders it a potential candidate for use in space exploration missions or other environments under extreme temperatures. Additional and more comprehensive characterization is, however, required to establish the reliability and suitability of such devices for long term use in extreme temperature applications.

Patterson, Richard↗

NASA NTRS2008

Performance of High Temperature Operational Amplifier, Type LM2904WH, under Extreme Temperatures

Operation of electronic parts and circuits under extreme temperatures is anticipated in NASA space exploration missions as well as terrestrial applications. Exposure of electronics to extreme temperatures and wide-range thermal swings greatly affects their performance via induced changes in the semiconductor material properties, packaging and interconnects, or due to incompatibility issues between interfaces that result from thermal expansion/contraction mismatch. Electronics that are designed to withstand operation and perform efficiently in extreme temperatures would mitigate risks for failure due to thermal stresses and, therefore, improve system reliability. In addition, they contribute to reducing system size and weight, simplifying its design, and reducing development cost through the elimination of otherwise required thermal control elements for proper ambient operation. A large DC voltage gain (100 dB) operational amplifier with a maximum junction temperature of 150 C was recently introduced by STMicroelectronics [1]. This LM2904WH chip comes in a plastic package and is designed specifically for automotive and industrial control systems. It operates from a single power supply over a wide range of voltages, and it consists of two independent, high gain, internally frequency compensated operational amplifiers. Table I shows some of the device manufacturer s specifications.

Patterson, Richard↗

NASA NTRS2003

Cryogenic Evaluation of an Advanced DC/DC Converter Module for Deep Space Applications

DC/DC converters are widely used in power management, conditioning, and control of space power systems. Deep space applications require electronics that withstand cryogenic temperature and meet a stringent radiation tolerance. In this work, the performance of an advanced, radiation-hardened (rad-hard) commercial DC/DC converter module was investigated at cryogenic temperatures. The converter was investigated in terms of its steady state and dynamic operations. The output voltage regulation, efficiency, terminal current ripple characteristics, and output voltage response to load changes were determined in the temperature range of 20 to -140 C. These parameters were obtained at various load levels and at different input voltages. The experimental procedures along with the results obtained on the investigated converter are presented and discussed.

Elbuluk, Malik E.↗