Pereverzev, Sergey V.

NASA NTRS2010

Development of the Nano-HEB Array for Low-Background Far-IR Applications

We present an overview of the recent progress made in the development of a far-IR array of ultrasensitive hot-electronnanobolometers (nano-HEB) made from thin titanium (Ti) films. We studied electrical noise, signal and noisebandwidth, single-photon detection, optical noise equivalent power (NEP), and a microwave SQUID (MSQUID) basedfrequency domain multiplexing (FDM) scheme. The obtained results demonstrate the very low electrical NEP down to1.5x10-(sup 2)? W/Hz(sup 1)/(sup 2) at 50 mK determined by the dominating phonon noise. The NEP increases with temperature as ~ T(sup 3)reaching ~ 10-(sup 1)? W/Hz(sup 1)/(sup 2) at the device critical temperature TC = 330-360 mK. Optical NEP = 8.6x10-(sup 1)? W/Hz(sup 1)/(sup 2) at 357mK and 1.4x10-(sup 1)? W/Hz(sup 1)/(sup 2) at 100 mK respectively, agree with thermal and electrical data. The optical couplingefficiency provided by a planar antenna was greater than 50%. Single 8-?m photons have been detected for the first timeusing a nano-HEB operating at 50-200 mK thus demonstrating a potential of these detectors for future photon-countingapplications in mid-IR and far-IR. In order to accommodate the relatively high detector speed (~ ?s at 300 mK, ~ 100 ?sat 100 mK), an MSQUID based FDM multiplexed readout with GHz carrier frequencies has been built. Both the readoutnoise ~ 2 pA/Hz(sup 1)/(sup 2) and the bandwidth > 150 kHz are suitable for nano-HEB detectors.

single-photon↗

NASA NTRS2008

Electrical NEP in Hot-Electron Titanium Superconducting Bolometers

We are presenting the current progress on the titanium (Ti) hot-electron transition-edge devices. The ultimate goal of this work is to develop a submillimeter Hot-Electron Direct Detector (HEDD) with the noise equivalent power NEP = 10(sup -1) - 10(sup -20) W/Hz(sup 1/2) for the moderate resolution spectroscopy and Cosmic Microwave Background (CMB) studies on future space telescope (e.g., SPICA, SAFIR, SPECS, CMBPol) with cryogenically cooled (approximately 4-5 K) mirrors. Recently, we have achieved the extremely low thermal conductance (approximately 20 fW/K at 300 mK and approximately 0.1 fW/K at 40 mK) due to the electron-phonon decoupling in Ti nanodevices with niobium (Nb) Andreev contacts. This thermal conductance translates into the "phonon-noise" NEP approximately equal to 3 x 10(sup -21) W/Hz(sup 1/2) at 40 mK and NEP approximately equal to 3 x 10(sup -19) W/Hz(sup 1/2) at 300 mK. These record data indicate the great potential of the hot-electron detector for meeting many application needs. Beside the extremely low phonon-noise NEP, the nanobolometers have a very low electron heat capacitance that makes them promising as detectors of single THz photons. As the next step towards the practical demonstration of the HEDD, we fabricated and tested somewhat larger than in Ref.1 devices (approximately 6 micrometers x 0.35 micrometers x 40 nm) whose critical temperature is well reproduced in the range 300-350 mK. The output electrical noise measured in these devices with a low-noise dc SQUID is dominated by the thermal energy fluctuations (ETF) aka "phonon noise". This indicates the high electrothermal loop gain that effectively suppresses the contributions of the Johnson noise and the amplifier (SQUID) noise. The electrical NEP = 6.7 x 10(sup -18) W/Hz(sup 1/2) derived from these measurements is in good agreement with the predictions based on the thermal conductance data. The very low NEP and the high speed (approximately microns) are a unique combination not found in other detectors.

transition-edge sensor↗