Engineering topics

Peters, J. W.

Publications and source records attributed to Peters, J. W..

5 records

DOE OSTI2020

Universal free-energy landscape produces efficient and reversible electron bifurcation

For decades, it was unknown how electron-bifurcating systems in nature prevented energy-wasting short-circuiting reactions that have large driving forces, so synthetic electron-bifurcating molecular machines could not be designed and built. The underpinning free-energy landscapes for electron bifurcation were also enigmatic. We predict that a simple and universal free-energy landscape enables electron bifurcation, and we show that it enables high-efficiency bifurcation with limited short-circuiting (the EB scheme). The landscape relies on steep free-energy slopes in the two redox branches to insulate against short-circuiting using an electron occupancy blockade effect, without relying on nuanced changes in the microscopic rate constants for the short-circuiting reactions. The EB scheme thus unifies a body of observations on biological catalysis and energy conversion, and the scheme provides a blueprint to guide future campaigns to establish synthetic electron bifurcation machines.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS2011

An Archean Biosphere Initiative

The search for life on extrasolar planets will necessarily focus on the imprints of biolgy on the composition of planetary atmospheres. The most notable biological imprint on the modern terrestrial atmosphere is the presence of 21 % O2, However, during most of the past 4 billion years, life and the surface environments on Earth were profoundly different than they are today. It is therefore a major goal of the astrobiology community to ascertain how the O2 content of the atmosphere has varied with time. and to understand the causes of these variations. The NAI and NASA Exobiology program have played critical roles in developing our current understanding of the ancient Earth's atmosphere, supporting diverse observational, analytical, and computational research in geoscience, life science, and related fields. In the present incarnation of the NAI, ongoing work is investigating (i) variations in atmospheric O2 in the Archean to the Cambrian, (ii) characterization of the redox state of the oceans shortly before, during and after the Great Oxidation Event (GOE), and (iii) unraveling the complex connections between environmental oxygenation, global climate, and the evolution of life.

Anbar, A. D.↗

NASA NTRS1980

Photonitride passivating coating for IC's

Increased reliability and simplified fabrication result from postassembly preencapsulation passivation process. Photonitride reaction chamber receives silane, ammonia, and mercury from mixing manifold to form passivating coating on IC's. Photonitride layer is barrier to moisture and penetration by mobile ions, and helps to protect IC devices subjected to severe mechanical handling or circuit repair procedures. Process is compatible with variety of wire-bonded lead frame assemblies. Advantages over plasma and sputtering deposition processes are low deposition temperature and zero stray radiation and ion levels.

Hall, T. C.↗

NASA NTRS1980

Silicon nitride passivation of IC's

Feasibility study looks at effectiveness of silicon nitride passivation coating against moisture and mobile ions. Coating was tested on CMOS microcircuits. Tests included temperature cycling, high-temperature electrical stress, and temperature and humidity exposure. Report concludes plastic-encapsulated circuits with protective coating exhibit high survival rates; it includes tables summarizing test results and figures that show effects of flexing.

Erickson, J. J.↗

NASA NTRS1979

Feasibility study of silicon nitride protection of plastic encapsulated semiconductors

The application of low temperature silicon nitride protective layers on wire bonded integrated circuits mounted on lead frame assemblies is reported. An evaluation of the mechanical and electrical compatibility of both plasma nitride and photochemical silicon nitride (photonitride) passivations (parallel evaluations) of integrated circuits which were then encapsulated in plastic is described. Photonitride passivation is compatible with all wire bonded lead frame assemblies, with or without initial chip passivation. Plasma nitride passivation of lead frame assemblies is possible only if the chip is passivated before lead frame assembly. The survival rate after the environmental test sequence of devices with a coating of plasma nitride on the chip and a coating of either plasma nitride or photonitride over the assembled device is significantly greater than that of devices assembled with no nitride protective coating over either chip or lead frame.

Peters, J. W.↗