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Petersen, W. C.

Publications and source records attributed to Petersen, W. C..

Advanced large scale GaAs monolithic IF switch matrix subsystem

Attention is given to a novel chip design and packaging technique to overcome the limitations due to the high signal isolation requirements of advanced communications systems. A hermetically sealed 6 x 6 monolithic GaAs switch matrix subsystem with integral control electronics based on this technique is presented. An 0-dB insertion loss and 60-dB crosspoint isolation over a 3.5-to-6-GHz band were achieved. The internal controller portion of the switching subsystem provides crosspoint control via a standard RS-232 computer interface and can be synchronized with an external systems control computer. The measured performance of this advanced switching subsystem is fully compatible with relatively static 'switchboard' as well as dynamic TDMA modes of operation.

Ch'en, D. R.↗

Low cost high efficiency GaAs monolithic RF module for SARSAT distress beacons

Low cost high performance (5 Watts output) 406 MHz beacons are urgently needed to realize the maximum utilization of the Search and Rescue Satellite-Aided Tracking (SARSAT) system spearheaded in the U.S. by NASA. Although current technology can produce beacons meeting the output power requirement, power consumption is high due to the low efficiency of available transmitters. Field performance is currently unsatisfactory due to the lack of safe and reliable high density batteries capable of operation at -40 C. Low cost production is also a crucial but elusive requirement for the ultimate wide scale utilization of this system. Microwave Monolithics Incorporated (MMInc.) has proposed to make both the technical and cost goals for the SARSAT beacon attainable by developing a monolithic GaAs chip set for the RF module. This chip set consists of a high efficiency power amplifier and a bi-phase modulator. In addition to implementing the RF module in Monolithic Microwave Integrated Circuit (MMIC) form to minimize ultimate production costs, the power amplifier has a power-added efficiency nearly twice that attained with current commercial technology. A distress beacon built using this RF module chip set will be significantly smaller in size and lighter in weight due to a smaller battery requirement, since the 406 MHz signal source and the digital controller have far lower power consumption compared to the 5 watt power amplifier. All the program tasks have been successfully completed. The GaAs MMIC RF module chip set has been designed to be compatible with the present 406 MHz signal source and digital controller. A complete high performance low cost SARSAT beacon can be realized with only additional minor iteration and systems integration.

Petersen, W. C.↗

A three-stage power amplifier for a 20 GHz monolithic transmit module

Design, fabrication, and test results of a three-stage GaAs monolithic power amplifier covering the 17.7 to 20.2 GHz band are described. Intermediate results for single and two-stage amplifiers are also presented. The 1.5 x 3.1 millimeter three-stage amplifier chip has 15 dB gain from 16.5 to 20.2 GHz. Measured saturated output power is between +20 and +21 dBm with improvement expected from minor circuit and device changes.

Petersen, W. C.↗

A two-stage monolithic buffer amplifier for 20 GHz satellite communication

Design, fabrication, and test results of a two-stage GaAs monolithic buffer amplifier for 20 GHz satellite communication are described in this paper. A gain of 13 + or - 0.75 dB from 17.7 to 20.2 GHz was obtained from the 1.5 x 1.5 millimeter chip, which includes all necessary bias and dc blocking circuitry.

Petersen, W. C.↗