Engineering topics

Phatak, Charudatta

Publications and source records attributed to Phatak, Charudatta.

16 records

DOE OSTI2026

Magnonic spontaneous oscillation induced by parametric pumping

Spontaneous dynamic systems have attracted significant attention for their rich underlying physics such as phase-locking and synchronization. In this work, we report a new mechanism of generating magnetic spontaneous oscillation via parametric pumping. By applying a pump tone to excite propagating spin waves in a yttrium iron garnet delay line, four-wave mixing converts the pump mode into two phase-autonomous propagating magnon modes, i.e. a spontaneous mode with nearly twice the wavenumber of the pump mode and an idler mode with nearly zero wavenumber. This allows us to reliably generate ultrasharp spin wave dynamics with broad frequency tunability from the pump and magnetic field. We show that the spontaneous mode can be phase-locked to a probe tone, similar to an auto-oscillator. Furthermore, the spontaneous dynamics can be used to implement a high-gain magnonic parametric amplifier with a gain up to 40 dB. Our results open a new avenue for studying nonlinear magnonics and synchronization physics in propagating magnon geometry and for developing new magnonic devices.

Li, Yi↗

DOE OSTI2024

Direct Imaging of Asymmetric Interfaces and Electrostatic Potentials inside a Hafnia–Zirconia Ferroelectric Nanocapacitor

In hafnia-based thin-film ferroelectric devices, chemical phenomena during growth and processing, such as oxygen vacancy formation and interfacial reactions, appear to strongly affect device performance. However, the correlation between the structure, chemistry, and electrical potentials at the nanoscale in these devices is not fully known, making it difficult to understand their influence on device properties. Here, we directly image the composition and electrostatic potential with nanometer resolution in the cross section of a nanocrystalline W/Hf 0.5 Zr 0.5 O 2−δ (HZO)/W ferroelectric capacitor using multimodal electron microscopy. This reveals a 1.4 nm wide tungsten suboxide interfacial layer formed at the bottom interface during fabrication, which introduces a potential dip and leads to asymmetric switching fields. Additionally, we compare the measured potentials to DFT calculations and find it is nearly 3 V lower than expected in the HZO, which appears to be caused by oxygen vacancies and a resulting negative built-in potential. In conclusion, these chemical and electrostatic details are important to characterize and tune to achieve high-performance ferroelectric devices.

Defects in solids↗

DOE OSTI2024

Prospects for Antiferromagnetic Spintronic Devices

This article examines recent advances in the field of antiferromagnetic spintronics from the perspective of potential device realization and applications. We discuss advances in the electrical control of antiferromagnetic order by current-induced spin–orbit torques, particularly in antiferromagnetic thin films interfaced with heavy metals. We also review possible scenarios for using voltage-controlled magnetic anisotropy as a more efficient mechanism to control antiferromagnetic order in thin films with perpendicular magnetic anisotropy. Next, we discuss the problem of electrical detection (i.e., readout) of antiferromagnetic order and highlight recent experimental advances in realizing anomalous Hall and tunneling magnetoresistance effects in thin films and tunnel junctions, respectively, which are based on noncollinear antiferromagnets. Understanding the domain structure and dynamics of antiferromagnetic materials is essential for engineering their properties for applications. For this reason, we then provide an overview of imaging techniques as well as micromagnetic simulation approaches for antiferromagnets. Finally, we present a perspective on potential applications of antiferromagnets for magnetic memory devices, terahertz sources, and detectors.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Spin–Phonon Coupling and Magnetic Transition in an Organic Molecule Intercalated Cr 2 Ge 2 Te 6

The manipulation of spin–phonon coupling in both formations and explorations of magnetism in two-dimensional van der Waals ferromagnetic semiconductors facilitates unprecedented prospects for spintronic devices. The interlayer engineering with spin–phonon coupling promises controllable magnetism via organic cation intercalation. Here, in this study, spectroscopic evidence reveals the intercalation effect on the intrinsic magnetic and electronic transitions in quasi-two-dimensional Cr 2 Ge 2 Te 6 using tetrabutyl ammonium (TBA + ) as the intercalant. The temperature evolution of Raman modes, E g 3 and A g 1 , along with the magnetization measurements, unambiguously captures the enhancement of the ferromagnetic Curie temperature in the intercalated heterostructure. Moreover, the E g 4 mode highlights the increased effect of spin–phonon interaction in magnetic-order-induced lattice distortion. Combined with the first-principle calculations, we observed a substantial number of electrons transferred from TBA + to Cr through the interface. The interplay between spin–phonon coupling and magnetic ordering in van der Waals magnets appeals for further understanding of the manipulation of magnetism in layered heterostructures.

2D magnet↗

DOE OSTI2024

Nanosecond Structural Dynamics during Electrical Melting of Charge Density Waves in 1⁢T-TaS 2

Electrical control of charge density waves has been of immense interest, as the strong underlying electron-lattice interactions potentially open new, efficient pathways for manipulating their ordering and, consequently, their electronic properties. However, the transition mechanisms are often unclear as electric field, current, carrier injection, heat, and strain can all contribute and play varying roles across length scales and timescales. Here, we provide insight on how electrical stimulation melts the room temperature charge density wave order in 1T-TaS 2 by visualizing the atomic and mesoscopic structural dynamics from quasistatic to nanosecond pulsed melting. Using a newly developed ultrafast electron microscope setup with electrical stimulation, we reveal the order and strain dynamics during voltage pulses as short as 20 ns. The order parameter dynamics across a range of pulse amplitudes and durations support a thermally driven mechanism even for fields as high as 19 kV cm -1 . In addition, time-resolved imaging reveals a heterogeneous, mesoscopic strain response across the flake, including MHz-scale acoustic resonances that emerge during sufficiently short pulsed excitation which may modulate the order. In conclusion, these results suggest that metallic charge density wave phases like studied here may be more robust to electronic switching pathways than insulating ones, motivating further investigations at higher fields and currents in this and other related systems.

36 MATERIALS SCIENCE↗

DOE OSTI2024

AI-enabled Lorentz microscopy for quantitative imaging of nanoscale magnetic spin textures

The manipulation and control of nanoscale magnetic spin textures are of rising interest as they are potential foundational units in next-generation computing paradigms. Achieving this requires a quantitative understanding of the spin texture behavior under external stimuli using in situ experiments. Lorentz transmission electron microscopy (LTEM) enables real-space imaging of spin textures at the nanoscale, but quantitative characterization of in situ data is extremely challenging. Here, we present an AI-enabled phase-retrieval method based on integrating a generative deep image prior with an image formation forward model for LTEM. Our approach uses a single out-of-focus image for phase retrieval and achieves significantly higher accuracy and robustness to noise compared to existing methods. Furthermore, our method is capable of isolating sample heterogeneities from magnetic contrast, as shown by application to simulated and experimental data. This approach allows quantitative phase reconstruction of in situ data and can also enable near real-time quantitative magnetic imaging.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here are shown three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn 3 , sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Epitaxial Growth of Large-Scale 2D CrTe 2 Films on Amorphous Silicon Wafers With Low Thermal Budget

2D van der Waals (vdW) magnets open landmark horizons in the development of innovative spintronic device architectures. However, their fabrication with large scale poses challenges due to high synthesis temperatures (>500 °C) and difficulties in integrating them with standard complementary metal-oxide semiconductor (CMOS) technology on amorphous substrates such as silicon oxide (SiO 2 ) and silicon nitride (SiN x ). Here, a seeded growth technique for crystallizing CrTe 2 films on amorphous SiN x /Si and SiO 2 /Si substrates with a low thermal budget is presented. This fabrication process optimizes large-scale, granular atomic layers on amorphous substrates, yielding a substantial coercivity of 11.5 kilo-oersted, attributed to weak intergranular exchange coupling. Field-driven Néel-type stripe domain dynamics explain the amplified coercivity. Moreover, the granular CrTe 2 devices on Si wafers display significantly enhanced magnetoresistance, more than doubling that of single-crystalline counterparts. Current-assisted magnetization switching, enabled by a substantial spin–orbit torque with a large spin Hall angle (85) and spin Hall conductivity (1.02 × 10 7 ℏ/2e Ω -1 m -1 ), is also demonstrated. These observations underscore the proficiency in manipulating crystallinity within integrated 2D magnetic films on Si wafers, paving the way for large-scale batch manufacturing of practical magnetoelectronic and spintronic devices, heralding a new era of technological innovation.

2D magnetic thin films↗

DOE OSTI2024

Distinct Composition‐Dependent Topological Hall Effect in Mn 2‐x Zn x Sb

Abstract Spintronics, an evolving interdisciplinary field at the intersection of magnetism and electronics, explores innovative applications of electron charge and spin properties for advanced electronic devices. The topological Hall effect (THE), a key component in spintronics, has gained significance due to emerging theories surrounding noncoplanar chiral spin textures. This study focuses on Mn 2‐x Zn x Sb, a material crystalizing in centrosymmetric space group with rich magnetic phases tunable by Zn contents. Through comprehensive magnetic and transport characterizations, we found that the high‐Zn ( x > 0.6) samples display THE which is enhanced with decreasing temperature, while THE in the low‐Zn ( x < 0.6) samples show an opposite trend. The coexistence of those distinct temperature dependencies for THE suggests very different magnetic interactions/structures for different compositions and underscores the strong coupling between magnetism and transport in Mn 2‐x Zn x Sb. The findings contribute to understanding topological magnetism in centrosymmetric tetragonal lattices, establishing Mn 2‐x Zn x Sb as a unique platform for exploring tunable transport effects and opening avenues for further exploration in the realm of spintronics.

Nabi, Md Rafique Un↗

DOE OSTI2024

Understanding the Effect of Curvature on the Magnetization Reversal of Three-Dimensional Nanohelices

Comprehending the interaction between geometry and magnetism in three-dimensional (3D) nanostructures is important to understand the fundamental physics of domain wall (DW) formation and pinning. Here, we use focused-electron-beam-induced deposition to fabricate magnetic nanohelices with increasing helical curvature with height. Using electron tomography and Lorentz transmission electron microscopy, we reconstruct the 3D structure and magnetization of the nanohelices. The surface curvature, helical curvature, and torsion of the nanohelices are then quantified from the tomographic reconstructions. Furthermore, by using the experimental 3D reconstructions as inputs for micromagnetic simulations, we can reveal the influence of surface and helical curvature on the magnetic reversal mechanism. Hence, we can directly correlate the magnetic behavior of a 3D nanohelix to its experimental structure. In conclusion, these results demonstrate how the control of geometry in nanohelices can be utilized in the stabilization of DWs and control of the response of the nanostructure to applied magnetic fields.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Raman Shifts in Two-Dimensional van der Waals Magnets Reveal Magnetic Texture Evolution

Two-dimensional (2D) van der Waals magnets comprise rich physics that can be exploited for spintronic applications. We investigate the interplay between spin-phonon coupling and spin textures in a 2D van der Waals magnet by combining magneto-Raman spectroscopy with cryogenic Lorentz transmission electron microscopy. Here we find that when stable skyrmion bubbles are formed in the 2D magnet, a field-dependent Raman shift can be observed, and this shift is absent for the 2D magnet prepared in its ferromagnetic state. Correlating these observations with numerical simulations that take into account field-dependent magnetic textures and spin--phonon coupling in the 2D magnet, we associate the Raman shift to field-induced modulations of the skyrmion bubbles and derive the existence of inhomogeneity in the skyrmion textures over the film thickness.

2D van der Waals magnet↗

DOE OSTI2024

Writing and Detecting Topological Charges in Exfoliated Fe 5– x GeTe 2

Fe 5–x GeTe 2 is a promising two-dimensional (2D) van der Waals (vdW) magnet for practical applications, given its magnetic properties. These include Curie temperatures above room temperature, and topological spin textures–TST (both merons and skyrmions), responsible for a pronounced anomalous Hall effect (AHE) and its topological counterpart (THE), which can be harvested for spintronics. Here, we show that both the AHE and THE can be amplified considerably by just adjusting the thickness of exfoliated Fe 5–x GeTe 2 , with THE becoming observable even in zero magnetic field due to a field-induced unbalance in topological charges. Using a complementary suite of techniques, including electronic transport, Lorentz transmission electron microscopy, and micromagnetic simulations, we reveal the emergence of substantial coercive fields upon exfoliation, which are absent in the bulk, implying thickness-dependent magnetic interactions that affect the TST. We detected a “magic” thickness t ≈ 30 nm where the formation of TST is maximized, inducing large magnitudes for the topological charge density (~6.45 × 10 20 cm –2 ), and the concomitant anomalous (ρ xy A,max ≃22.6 μΩ cm) and topological (ρ xy u,T 1≃5 μΩ cm) Hall resistivities at T ≈ 120 K. These values for ρ xy A,max and ρ xy u,T are higher than those found in magnetic topological insulators and, so far, the largest reported for 2D magnets. Furthermore, the hitherto unobserved THE under zero magnetic field could provide a platform for the writing and electrical detection of TST aiming at energy-efficient devices based on vdW ferromagnets.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2023

Reconstruction of simulated electrostatic potentials by automatic differentiation-based phase retrieval in electron microscopy imaging

Measuring interfacial electrostatic potentials is vital to understanding many fundamental materials properties. A variety of TEM methods exist for measuring electric potentials from the phase shift produced on an electron wave as it passes through a sample. However, most are either experimentally challenging or poorly suited to resolving nanoscale features. Here, we demonstrate the viability of a simple, automatic differentiation-based exit wave reconstruction from a focal series of images to accurately measure nanoscale electric potentials. Here, the analysis suggests that under optimal measurement conditions, electric potentials can be resolved to less than 0.06 V in magnitude and less than 1 nm in spatial extent.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Direct observation of magnetic ordering induced via systematic lattice disorder in artificial rhombus spin ices

It is critical to understand the effect of lattice geometry on the order parameter of a condensed matter system, as it controls phase transitions in such systems. Artificial spin ices (ASIs) are two-dimensional lattices of Ising-like nanomagnets that provide an opportunity to explore such phenomena by lithographically controlling the lattice geometry to observe its influence on magnetic ordering and frustration effects. Here we report a systematic approach to studying the effects of disorder in rhombus ASIs generated from combinations of five vertex motifs. We investigate four geometries characterized by a geometric order parameter, with symmetries ranging from periodic to quasiperiodic to random. Lorentz transmission electron microscopy data indicates magnetic domain behavior depends on chains of strongly-coupled islands in the periodic and sixfold-twinned lattices, while the behavior of the disordered lattice is dominated by vertex motifs with large configurational degeneracy. Utilizing micromagnetic simulations, a quantitative analysis of the lattice energetics showed that the experimental rotationally-demagnetized state of the disordered ASI was closer in energy to the idealized ground state compared to other periodic and twinned ASIs. Finally, our work provides a unique pathway for using degeneracy, magnetic frustration, and order to control the magnetization behavior of designer disordered systems.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Direct Observation of Magnetic Bubble Lattices and Magnetoelastic Effects in van der Waals Cr 2 Ge 2 Te 6

Abstract Ferromagnetic van der Waals (vdW) materials are of large current interest for the fundamental study of low‐dimensional magnetism and for potential applications in multilayer heterostructures. Cr 2 Ge 2 Te 6 (CGT) is particularly exciting because it is a ferromagnetic semiconductor with tunable electronic and magnetic properties. Controlling the magnetic domain structure of CGT is a requirement for understanding its novel interface physics and for tuning behavior for potential devices. Herein, cryo‐Lorentz transmission electron microscopy is performed in the temperature range of 12–50K to directly image the magnetic domain structures in CGT. A rich phase diagram of domain structures including stripe domains, magnetic bubble lattices of mixed‐chirality, and topologically‐protected lattices of homochiral magnetic bubbles is observed. The types and chiralities of the bubbles can be controlled by topographical changes in the CGT flakes. Additionally, it is observed that in‐plane strain and magnetoelastic coupling can align and organize both bubble lattices and stripe domains. This study provides insights into creating and controlling complex magnetic domain structures for integration into multilayer heterostructures and for future studies of 2D magnetism.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Visualizing the Effect of Oxidation on Magnetic Domain Behavior of Nanoscale Fe 3 GeTe 2 for Applications in Spintronics

Magnetic van der Waals (vdW) materials offer an opportunity to design heterostructures that will lead to exotic functionalities that arise from interfacial interaction. In addition to coupling to different vdW materials, the naturally oxidized surface layer of a vdW material also forms a heterostructure with its bulk film, giving rise to intriguing phenomena. Here, we directly observe the impact of oxidation on the magnetic domains, namely, magnetic stripe domain and skyrmions, in a nanoscale Fe 3 GeTe 2 flake using cryo Lorentz transmission electron microscopy. After the Fe 3 GeTe 2 is exposed to ambient conditions, partial oxidation leads to an increase in the density of skyrmions even under zero magnetic field. Complete oxidation leads to a loss of the magnetic domain structure. We observe a gradual change in Fe 3 GeTe 2 from single crystal to amorphous as the oxidation increases. The oxidized Fe 3 GeTe 2 primarily consists of iron oxide, which could be antiferromagnetic in nature. We hypothesize that the interfacial interaction between these surface antiferromagnetic oxides and the bulk ferromagnetic Fe 3 GeTe 2 , as well as the effect of interfacial roughness, leads to the increase in Néel skyrmion creation. Furthermore, this work opens a path to harness controlled oxidation as a build block to create dense skyrmion lattices without the need for an external magnetic field, leading to potential future applications in spintronic devices.

36 MATERIALS SCIENCE↗