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Phillips, Larry

Publications and source records attributed to Phillips, Larry.

High power pulse systems for surface processing

A high-power pulsed surface processing system includes insulated-gate bipolar transistors (IGBT) to replicate desirable pulse structures with high precision, at low cost, and with high reliability within a single system. The pulsed surface processing system includes a power supply, an anode and a cathode, a dual gate driver supplying power to one or more IGBT gates, and one or more capacitor banks. Pulse formation software controls the timing and duration of electrical pulses to the electrodes. A freewheeling diode protects the system from an abrupt reduction of current in the circuit. The high-power pulsed surface processing system may be used to control versatile and complex pulse structures while with precise control of instantaneous pulse powers, pulse timing, and process control. The inclusion of dual gate drivers also offers the ability for multiple pulsers to be created and “slaved” together for a wide variety of custom processes.

Tian, Hui↗

Temperature and Microstructural Effects on the Superconducting Properties of Niobium Thin Films

Here, superconducting thin films have a wide range of dc and RF applications, from detectors to superconducting radio frequency. Amongst the most used materials, niobium (Nb) has the highest critical temperature (TC) and highest lower critical field (HC1) of the elemental superconductors and can be deposited on a variety of substrates, making Nb thin films very appealing for such applications. Here, we present temperature-dependent dc studies on the critical temperature and critical fields of Nb thin films grown on copper and r-plane sapphire surfaces. Additionally, we correlate the dc superconducting properties of these films with their microstructure, which allows for the possibility of tailoring future films for a specific application.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Reversal of the asymmetry in a cylindrical coaxial capacitively coupled Ar/Cl 2 plasma

The reduction of the asymmetry in the plasma sheath voltages of a cylindrical coaxial capacitively coupled plasma is crucial for efficient surface modification of the inner surfaces of concave three-dimensional structures, including superconducting radio frequency cavities. One critical asymmetry effect is the negative dc self-bias, formed across the inner electrode plasma sheath due to its lower surface area compared to the outer electrode. The effect on the self-bias potential with the surface enhancement by geometric modification on the inner electrode structure is studied. The shapes of the inner electrodes are chosen as cylindrical tube, large and small pitch bellows, and disc-loaded corrugated structure (DLCS). The dc self-bias measurements for all these shapes were taken at different process parameters in Ar/Cl 2 discharge. Lastly, the reversal of the negative dc self-bias potential to become positive for a DLCS inner electrode was observed and the best etch rate is achieved due to the reduction in plasma asymmetry.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗