Lasing dynamics of diode-pumped Yb – Er laser with a passive Q switch exposed to high-power external light
The temporal dynamics of diode-side-pumped Yb – Er laser, with a passive Co{sup 2+} : MgAl{sub 2}O{sub 4} Q switch illuminated by a light beam (total fluence of 0.15 – 0.16 J cm{sup −2}) from a semiconductor pulsed module, is investigated. It is shown that, using this external illumination, one can change the lasing onset delay and the time jitter ΔT{sub gi}. The dependence of ΔT{sub gi} on the interval between the instant of switching the illumination module on and the lasing peak position t{sub i} has a minimum at |t{sub i}| ≈ 10 μs. The decrease in ΔT{sub gi} with a change in |t{sub i}| from 90 to 10 μs indicates that instant of lasing peak occurrence for the Yb – Er laser is partially controlled by the pulse from the highly stable semiconductor module. If |t{sub i}| < 10 μs, the enhanced luminescence fluence in the cavity of Yb – Er laser exceeds 0.16 J cm{sup −2}; the light beam from the module does not affect much the lasing process in the ytterbium – erbium laser; and, as a consequence, the time jitter recovers the initial value. (paper)