Engineering topics

Pirouz, P.

Publications and source records attributed to Pirouz, P..

12 records

NASA NTRS2005

Liquid-Phase Deposition of Single-Phase Alpha-Copper-Indium-Diselenide

The success of exploratory missions in outer space often depends on a highly efficient renewable energy supply, as provided by solar cells. Figure 1 shows a well-known example: The robotic vehicle "Rover," constructed for NASA s "Mars Pathfinder" mission. The solar cells for such applications not only need to have high conversion efficiency, but must possess a high specific power, thus a high power output per unit mass. Since future missions will demand for large aggregates of solar cells and space flights are expensive, the solar cells must furthermore be available at low costs (per unit power output) and - very important in outer space - have a long lifetime and a high resistance against structural damage introduced by irradiation with high-energy electrons and protons.

Cowen, J.↗

NASA NTRS2004

Liquid Phase Deposition of Single-Phase Alpha-Copper-Indium-Diselenide

The success of exploratory missions in outer space often depends on a highly efficient renewable energy supply, as provided by solar cells. Since future missions will demand large aggregates of solar cells, and space flight is expensive, the solar cells must furthermore be available at low costs and have a long lifetime and high resistance against structural damage introduced by irradiation with high energy electrons and protons. The photovoltaic materials that are presently available only partly fulfill all these requirements. Therefore, we propose to explore a new method for fabricating thin-films for cost-efficient solar cells with very high specific power,high irradiation resistance and long lifetime based on the alpha-phase of the Cu-In-Se system "alpha-CIS."

Hepp, Aloysius F.↗

NASA NTRS1996

Effect of Tilt Angle on the Morphology of SiC Epitaxial Films Grown on Vicinal (0001) SiC Substrates

In this study of 4H-SiC and 6H-SiC epitaxial films we found that film morphology was strongly dependent on the tilt angle of the substrate. Large surface steps (up to 25 nm high) due to step bunching were more prevalent at smaller tilt angles. Also, 4H films were more susceptible than 6H to 3C-SiC inclusions during growth. The lateral growth of steps from screw dislocations in low-tilt-angle substrates demonstrated that step bunching on the atomic scale was anisotropic with respect to growth direction for both 4H-SiC and 6H-SiC. A model explaining this behavior is presented. We observed and directly measured the Burgers vector of a 'super' screw dislocation in a 6H-SiC epilayer.

Powell, J. A.↗

NASA NTRS1992

Effect of high temperature annealing on the microstructure of SCS-6 SiC fibers

The effect of annealing the SCS-6 SiC fiber for one hour at 2000 C in an argon atmosphere is reported. The SiC grains in the fiber coarsen appreciably and the intergranular carbon films segregate to the grain junctions. It would appear that grain growth in the outer part of the fiber is primarily responsible for the loss in fiber strength and improvement in fiber creep resistance.

Ning, X. J.↗

NASA NTRS1991

The microstructure of SCS-6 SiC fiber

A thorough investigation of the microstructure of single SCS-6 SiC fibers widely used as reinforcements in metal-matrix and ceramic-matrix composites has been made. Various techniques of EM including SEM, TEM, HREM parallel electron energy loss spectroscopy (PEELS), and SAM have been used to analyze and characterize the microstructure. The fiber is a complicated composite consisting of many different layers of SiC deposited on a carbon core and different carbonaceous coatings covering the SiC layers. The structural and chemical aspects of each layer are characterized and discussed.

Ning, X. J.↗

NASA NTRS1990

The structure of carbon in chemically vapor deposited SiC monofilaments

Electron diffraction and high resolution TEM have been used to study the microstructures of C-rich regions in CVD SCS-6 SiC fibers. The reciprocal lattice of such structures, and their diffraction patterns, have been ascertained on the basis of geometrical considerations. While the C microstructures in the substrate filament and the outer coating layers of the fabric are consistent with different distributions of Oberlin's (1989) 'basic structural units', the microstructure of the inner substrate coating is consistent with turbostratic C.

Ning, X. J.↗

NASA NTRS1988

Indentation plasticity and fracture in silicon

Measurements of the ductile-brittle transition temperature of heavily doped silicon were carried out using indentation techniques. Diamond pyramid hardness tests were performed on the (100) face of heavily doped N-type and P-type and intrinsic silicon single crystals. Tests were performed over the range 200 C to 850 C and loads of 100 to 500 g were used. Samples were subsequently etched to reveal dislocation rosettes produced by indentation. Intrinsic silicon underwent a ductile-brittle transition at 660 C, P-type at 645 C and N-type at 625 C. Hardness values varied from 1.1 GPa at 700 C to 11.7 GPa at 200 C. Significant effects of hardness on doping were present only at the highest temperatures. Lower loads generally produced higher hardness but load did not affect the Ductile-Brittle Transition Temperature (DBTT). Fracture toughness values ranged from 0.9 MPa m(1/2) at 200 C to 2.75 MPa m(1/2) near the DBTT. Doping did not affect the fracture toughness of silicon. P-type doping increased the size of dislocation rosettes observed after indentation, but N-type did not, in contradiction of the expected results. Results are discussed in terms of the effect of doping on the dislocation mobility in silicon.

Rybicki, George C.↗

NASA NTRS1988

Transmission electron microscopy of composites

Since interphase-interfaces are often both the structurally weakest and chemically least stable regions of a composite material, they are critical determinants of such macrostructural characteristics as tensile strength and fracture toughness. Attention is presently given to the use of TEM for the study of interfaces between dissimilar materials; electron-diffraction, analytical, and high-resolution forms of TEM are employed, for the cases of both structural and semiconductor composites. The materials studied are SiC/Si, GaP/Si, and SiC fiber- and whisker-reinforced Si3N4.

Pirouz, P.↗

NASA NTRS1987

TEM investigation of beta-SiC grown epitaxially on Si substrate by CVD

A transmission electron microscopy study is being conducted on the microstructure of beta-SiC films grown epitaxially on 001-plane silicon by chemical vapor deposition. Observations have been made in plain view and in cross-section. A high density of stacking faults has been found in the bulk of the epilayer which are bounded by partials of the Shockley type with Burgers vectors 1/6 211-line. Cross-sectional high resolution electron microscopy of the interface has shown it to be semicoherent with misfit dislocations to accommodate the lattice parameter difference between the substrate and the epilayer. In addition to misfit dislocations, a high density of twins and some stacking faults are present in the SiC near the interface. Mechanisms for the nucleation and growth of these defects are discussed.

Chorey, C. M.↗

NASA NTRS1987

Antiphase boundaries in epitaxially grown beta-SiC

When the surface of beta-SiC, grown epitaxially on (001) silicon by chemical vapor deposition, is chemically etched, boundaries appear which may be observed by optical or scanning electron microscopy. Examination by plan-view and cross-sectional transmission electron microscopy shows boundaries in the film which exhibit line or fringe contrast. Convergent beam electron diffraction has been used to show that these boundaries separate domains that are in an antiphase relationship to each other. A model is presented which discusses the formation of these domains from independent nucleation on a stepped substrate surface.

Pirouz, P.↗

NASA NTRS1987

Lattice defects in beta-SiC grown epitaxially on silicon substrates

Defects generated on beta-SiC grown on a (001) silicon substrate by chemical vapor deposition are characterized and their mechanism of formation discussed. It is argued that nucleation plays a primary role in this heteroepitaxial system where the lattice mismatch is so large.

Pirouz, P.↗

NASA NTRS1987

Microscopy of epitaxially grown beta-SiC on 001-plane silicon

Various defects occurring in epitaxially grown layers of beta-SiC are characterized by TEM, and the mechanisms of growth and defect formation are discussed. In particular, attention is given to the following types of defects: misfit dislocations, interfacial twins, antiphase boundaries, threading dislocations, and wide stacking faults. Details of the experimental procedure are given.

Pirouz, P.↗