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Poivey, C.

Publications and source records attributed to Poivey, C..

Total Dose Survivability of Hubble Electronic Components

A total dose analysis for exposure of electronic parts at the box level is presented for the Hubble Space Telescope. This was done using solid angle sectoring/3-dimensional ray trace and Monte Carlo radiation transport simulations. Results are discussed in terms of parts that are potential total dose concerns.

Monte Carlo radiation transport simulation↗

How Long Can the Hubble Space Telescope Operate Reliably?

Total ionizing dose exposure of electronic parts in the Hubble Space Telescope is analyzed using 3-D ray trace and Monte Carlo simulations. Results are discussed along with other potential failure mechanisms for science operations.

Mechanical Structure↗

Texas Instruments-Digital Signal Processor(TI-DSP)SMJ320F20 SEL Testing

This viewgraph presentation reviews the testing of the Texas Instrument Digital Signal Processor(TI-DSP)SMJ320F20. Tests were performed to screen for susceptibility to Single Event Latchup (SEL) and measure sensitivity as a function of Linear Energy Transfer (LET) for an application specific test setup. The Heavy Ion Testing of two TI-DSP SMJ320F240 devices experienced Single Event Latchup (SEL) conditions at an LET of 1.8 MeV/(mg/square cm) The devices were exposed from a fluence of 1.76 x l0(exp 3) to 5.00 x 10(exp 6) particles/square cm of the Neon, Argon and Krypton ion beams. For DI(sub DD) an average latchup current occurred at about 700mA, which is a magnitude of 10 over the nominal current of 700mA.

Sanders, Anthony B.↗

Evaluation of an Ultra-Low Power Reed Solomon Encoder for NASA's Space Technology 5 Mission

Radiation test results and analyses are presented for ultra-low power Reed Solomon encoder circuits that are being considered for use on the Space Technology 5 (ST5) mission. The total ionizing dose tolerance is in excess of 100 krad(Si) and is due to the low supply voltage and the use of back-bias, which suppresses radiation-induced leakage currents in the n-channel devices. The circuits do not latch-up for ion LET values of at least 90 MeV-sq cm/mg. A hardened-by-design approach to SEU has achieved an upset threshold of about 20 MeV-sq cm/mg. The SEU rate expected for these circuits in the geosynchronous transfer orbit of ST5 is low.

Lei, K. E.↗