Engineering topics
Publications and source records attributed to Polakovic, Tomas.
A method of making a thin film can include bombarding a substrate with first ions supplied from a first ion beam; and sputtering from a metal sputtering target substantially simultaneously with the bombardment to deposit a metal-ion film onto the substrate, wherein the method is performed without applied heat, and the metal sputtering target comprises one or more of a metal, a transition metal, a semi-metal, alloys thereof and combinations thereof.
We report the test results for a 120 GeV proton beam incident on superconducting nanowire particle detectors of various wire sizes. NbN devices with the same sensitive area were fabricated with different wire widths and tested at a temperature of 3 K. The relative detection efficiency was extracted from bias current scans for each device. The results demonstrate efficient detection of high energy protons for wire widths less than 400 nm. These results are particularly relevant for novel applications at accelerator facilities, such as the Electron-Ion Collider, where cryogenic cooling is readily available.
We introduce a design modification to conventional geometry of the cryogenic three-terminal switch, the nanocryotron (nTron). The conventional geometry of nTrons is modified by including parallel current-carrying channels, an approach aimed at enhancing the device's performance in magnetic field environments. The common challenge in nTron technology is to maintain efficient operation under varying magnetic field conditions. Here, we show that the adaptation of parallel channel configurations leads to an enhanced gate signal sensitivity, an increase in operational gain, and a reduction in the impact of superconducting vortices on nTron operation within magnetic fields up to 1 T. Contrary to traditional designs that are constrained by their effective channel width, the parallel nanowire channels permits larger nTron cross sections, further bolstering the device's magnetic field resilience while improving electro-thermal recovery times due to reduced local inductance. This advancement in nTron design not only augments its functionality in magnetic fields but also broadens its applicability in technological environments, offering a simple design alternative to existing nTron devices.