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Porter, W. A.

Publications and source records attributed to Porter, W. A..

13 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Apparatus for use in examining the lattice of a semiconductor wafer by X-ray diffraction

An improved apparatus for examining the crystal lattice of a semiconductor wafer utilizing X-ray diffraction techniques was presented. The apparatus is employed in a method which includes the step of recording the image of a wafer supported in a bent configuration conforming to a compound curve, produced through the use of a vacuum chuck provided for an X-ray camera. The entire surface thereof is illuminated simultaneously by a beam of incident X-rays which are projected from a distant point-source and satisfy conditions of the Bragg Law for all points on the surface of the water.

Parker, D. L.↗
NASA NTRS1977

Cameras for semiconductor process control

The application of X-ray topography to semiconductor process control is described, considering the novel features of the high speed camera and the difficulties associated with this technique. The most significant results on the effects of material defects on device performance are presented, including results obtained using wafers processed entirely within this institute. Defects were identified using the X-ray camera and correlations made with probe data. Also included are temperature dependent effects of material defects. Recent applications and improvements of X-ray topographs of silicon-on-sapphire and gallium arsenide are presented with a description of a real time TV system prototype and of the most recent vacuum chuck design. Discussion is included of our promotion of the use of the camera by various semiconductor manufacturers.

Porter, W. A.↗
NASA NTRS1977

X-ray topography as a process control tool in semiconductor and microcircuit manufacture

A bent wafer camera, designed to identify crystal lattice defects in semiconductor materials, was investigated. The camera makes use of conventional X-ray topographs and an innovative slightly bent wafer which allows rays from the point source to strike all portions of the wafer simultaneously. In addition to being utilized in solving production process control problems, this camera design substantially reduces the cost per topograph.

Parker, D. L.↗
NASA NTRS1977

The interrelationship between observers and system sensitivity

System observer theory and system sensitivity theory have developed as two distinct bodies of research literature. In this study an interrelationship between the two problem classes is considered. It is shown that the observer and the sensitivity problems are duals of each other.

Porter, W. A.↗
NASA NTRS1976

Effect of interfacial oxide layers on the current-voltage characteristics of Al-Si contacts

Aluminum-silicon contacts with very thin interfacial oxide layers and various surface impurity concentrations are studied for both n and p-type silicon. To determine the surface impurity concentrations on p(+)-p and n(+)-n structures, a modified C-V technique was utilized. Effects of interfacial oxide layers and surface impurity concentrations on current-voltage characteristics are discussed based on the energy band diagrams from the conductance-voltage plots. The interfacial oxide and aluminum layer causes image contrasts on X-ray topographs.

Porter, W. A.↗
NASA NTRS1974

Gravitational effects of process-induced dislocations in silicon

Matters pertaining to semiconductor device fabrication were studied in terms of the influence of gravity on the production of dislocations in silicon wafers during thermal cycling in a controlled ambient where no impurities are present and oxidation is minimal. Both n-type and p-type silicon wafers having a diameter of 1.25 in to 1.5 in, with fixed orientation and resistivity values, were used. The surface dislocation densities were measured quantitatively by the Sirtl etch technique. The results show two significant features of the plastic flow phenomenon as it is related to gravitational stress: (1) the density of dislocations generated during a given thermal cycle is directly related to the duration of the cycle; and (2) the duration of the thermal cycle required to produce a given dislocation density is inversely related to the equilibrium temperature. Analysis of the results indicates that gravitational stress is instrumental in process-induced defect generation.

Porter, W. A.↗
NASA NTRS1974

Gravitational effects on process-induced defects in single crystal silicon

Description and discussion of a series of experiments which vary each of several important processing parameters including wafer orientation, temperature, gravity greater than 1 g, and ultimately zero gravity. These experiments are in progress and results to date are included from experiments which control temperature, duration of thermal cycle, and wafer orientation during 1 g processing. Preliminary evidence is presented which indicates that gravitational stresses play a role in defect generation during processing at 1 g.

Porter, W. A.↗
NASA NTRS1974

Influence of material quality and process-induced defects on semiconductor device performance and yield

An overview of major causes of device yield degradation is presented. The relationships of device types to critical processes and typical defects are discussed, and the influence of the defect on device yield and performance is demonstrated. Various defect characterization techniques are described and applied. A correlation of device failure, defect type, and cause of defect is presented in tabular form with accompanying illustrations.

Porter, W. A.↗
NASA NTRS1973

Use of Sirtl etch for silicon-slice evaluation.

An investigation was conducted to explore the possibility of using Sirtl etch as a nondestructive evaluation step for categorizing silicon wafers before device fabrication is begun. It is known that chromium is deposited as a residue during the chemical reaction associated with etching silicon in Sirtl etch. There has been concern that the use of Sirtl etch could result in the diffusion of chromium into the silicon slice during subsequent high-temperature processing steps. The investigation revealed, however, that residual chromium resides only on the surface of the slice and can easily be removed.

Porter, W. A.↗
NASA NTRS1966

Apollo metrology program.

Metrology requirements for Apollo project, noting control and measuring equipment and calibration procedures

APOLLO PROJECT↗
NASA NTRS1966

Apollo Metrology Program

This paper introduces the metrology requirements in the recently published Apollo Program handbook, NHB 5400.2, entitled, 'Apollo Metrology Requirements Manual.' The major elements and control practices required for a comprehensive metrology system are identified. The elements are presented to you with sufficient detail of control practices to provide the scope of a total metrology program. The Manual is for implementation by the Apollo Space Flight Centers, their testing sites and contractors. The benefits of implementing these requirements are equally applicable to any Government or industry standards and calibration laboratory operations.

Porter, W. A.↗