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Power, W. L.

Publications and source records attributed to Power, W. L..

Low-angle normal faults-low differential stress at mid crustal levels

A simple model for frictional slip on pre-existing faults that considers the local stress state near the fault and the effect of non-hydrostatic fluid pressures predicts that low-angle normal faulting is restricted to areas of the crust characterized by low differential stress and nearly lithostatic fluid pressures. The model considers frictional slip on a cohesionless low-angle normal fault governed by the failure criterion tau = mu sub f (sigma (*) sub n) =mu sub f (sigma sub n - P sub f) where tau and sigma sub n are the shear and normal stresses across the fault plane, mu sub f is the static coefficient of friction, and P sub f is the pore fluid pressure. As a first approximation, the model considers a vertical greatest principal compressive stress, sigma sub 1. It is apparent that if slip on low-angle normal faults is governed by the avove frictional failure criterion, slip on the low-angle normal fault occurs only if the least effective principal stress, sigma (*) sub 3 = sigma sub 3 - P sub f, is tensile, whenever tan superscrip -1(mu sub f d, where d is the dip of the fault. If detachment faulting occurs at any significant depth in the crust, P sub f sigma sub 3 is required. In light of this conclusion I allow P sub f to vary as necessary to allow slip on the low-angle normal fault.

Power, W. L.↗

Development of a radiation-hard CMOS process

It is recommended that various techniques be investigated which appear to have the potential for improving the radiation hardness of CMOS devices for prolonged space flight mission. The three key recommended processing techniques are: (1) making the gate oxide thin. It has been shown that radiation degradation is proportional to the cube of oxide thickness so that a relatively small reduction in thickness can greatly improve radiation resistance; (2) cleanliness and contamination control; and (3) to investigate different oxide growth (low temperature dry, TCE and HCL). All three produce high quality clean oxides, which are more radiation tolerant. Technique 2 addresses the reduction of metallic contamination. Technique 3 will produce a higher quality oxide by using slow growth rate conditions, and will minimize the effects of any residual sodium contamination through the introduction of hydrogen and chlorine into the oxide during growth.

Power, W. L.↗