Engineering topics

Pultz, G. N.

Publications and source records attributed to Pultz, G. N..

3 records

NASA NTRS1988

High-power AlGaAs channeled substrate planar diode lasers for spaceborne communications

A high power channeled substrate planar AlGaAs diode laser with an emission wavelength of 8600 to 8800 A was developed. The optoelectronic behavior (power current, single spatial and spectral behavior, far field characteristics, modulation, and astigmatism properties) and results of computer modeling studies on the performance of the laser are discussed. Lifetest data on these devices at high output power levels is also included. In addition, a new type of channeled substrate planar laser utilizing a Bragg grating to stabilize the longitudinal mode was demonstrated. The fabrication procedures and optoelectronic properties of this new diode laser are described.

Connolly, J. C.↗

NASA NTRS1988

AlGaAs heterojunction lasers

The characterization of 8300 A lasers was broadened, especially in the area of beam quality. Modulation rates up to 2 Gbit/sec at output powers of 20 mW were observed, waveform fidelity was fully adequate for low BER data transmission, and wavefront measurements showed that phase aberrations were less than lamda/50. Also, individually addressable arrays of up to ten contiguous diode lasers were fabricated and tested. Each laser operates at powers up to 30 mW CW in single spatial mode. Shifting the operating wavelength of the basic CSP laser from 8300 A to 8650 A was accomplished by the addition of Si to the active region. Output power has reached 100 mW single mode, with excellent far field wave front properties. Operating life is currently approx. 1000 hrs at 35 mW CW. In addition, laser reliability, for operation at both 8300 A and 8650 A, has profited significantly from several developments in the processing procedures.

Goldstein, B.↗

NASA NTRS1987

0.87-micron CSP diode lasers for spaceborne communications

Index-guided channeled-substrate-planar (CSP) AlGaAs diode lasers are being developed for reliable, high-power operation for use as sources in spaceborne optical communications systems. Although most work on this AlGaAs structure has been aimed at optimizing performance at output wavelengths less than 8400 A, emission in the 8700 A regime is also of interest. In particular, such wavelengths are required for use in the direct detection laser transceiver to be incorporated into NASA's advanced communications technology satellite, in order to avoid absorption of the light by the atmosphere when communicating with ground-based terminals. Lowest order spatial mode and substantially single longitudinal mode output has been observed in 0.87-micron CSP devices in excess of 50 mW cw and 100 mW 50 percent duty-cycle, with rms phase-front aberrations measured to be about lambda/40.

Carlin, D. B.↗