Engineering topics

Racette, G. W.

Publications and source records attributed to Racette, G. W..

4 records

NASA NTRS1984

On orbit surfacing of thermal control surfaces

Substrates to be contaminated and contamination source were prepared. Additional information on paint spray method apparatus was obtained. Silver teflon second surface mirror samples and S 13 GLO paint samples were mounted, photographed under the microscope and measured to establish baseline data. Atomic oxygen cleaning and spray painting are being considered. Electrostatic powder and plasma spray coating systems appear to have serious drawbacks.

Racette, G. W.↗

NASA NTRS1979

Pressure Modulator Radiometer (PMR) tests

The pressure modulator technique was evaluated for monitoring pollutant gases in the Earth's atmosphere of altitude levels corresponding to the mid and lower troposphere. Using an experimental set up and a 110 cm sample cell, pressure modulator output signals resulting from a range of gas concentrations in the sample cell were examined. Then a 20 cm sample cell was modified so that trace gas properties in the atmosphere could be simulated in the laboratory. These gas properties were measured using an infrared sensor.

Odell, E. L. G.↗

NASA NTRS1979

Silicon source for vacuum deposition

Device using two independent silicon sources for ultra-high-vacuum deposition on large substrates can deposit P and N types of silicon simultaneously. Efficient water cooled copper shield supports and cools structure and isolates two filaments.

Racette, G. W.↗

NASA NTRS1977

Laboratory studies of silicon vapor deposition, phase A

A system is described capable of carrying out silicon vapor deposition experiments in the low 10 to the minus 10th power torr vacuum range. The system was assembled and tested for use in a program aimed at exploration of vacuum heteroepitaxy of silicon on several substrates of potential interest for photovoltaic applications. An experiment is described in which a silicon layer 2.5 microns thick was deposited on a pyrolytically cleaned tungsten substrate held at a temperature of 400 C. Using a resistance heated silicon source, thicker layers can be deposited in periods of hours by utilizing closer source to substrate distances.

Frost, R. T.↗