New Laboratory-Based Satellite Impact Experiments for Breakup Fragment Characterization
No abstract available
Liou, Jer-Chyi-Liou↗
Engineering topics
Radhakrishnan, G.
Publications and source records attributed to Radhakrishnan, G..
Post-flight analyses of the crystals from the M0003-14 quartz crystal microbalance experiment
Quartz Crystal Microbalances constructed by QCM Research were flown on the leading and trailing edges of LDEF as one of the sub-experiments of M0003. Response of the crystals coated with 150 A of In2O3 was recorded during the first 424 days of the mission. A second QCM with crystals coated with 150 A of ZnS was also flown but not monitored. After the flight, the QCM's were disassembled and analyzed in The Aerospace Corporation laboratories. The samples included the crystals from the leading and trailing edge samples of both types of coatings along with the reference crystals, which were inside the QCM housing. Analyses were performed by scanning electron microscopy, energy dispersive x-ray analyses, x-ray photoelectron spectroscopy, ion microprobe mass analysis, and reflectance spectroscopy in the infrared and UV/visible regions. The crystals are contaminated predominantly with silicone compounds. The contamination is higher on the leading edge than on the trailing edge and higher on the exposed crystals than on the reference crystals.
Stuckey, W. K.↗
Post-flight analyses of the crystals from the M0003-14 quartz crystal microbalance experiment
Quartz Crystal Microbalances constructed by QCM Research were flown on the leading and trailing edges of the Long Duration Exposure Facility (LDEF) as one of the sub-experiments of M0003. Response of the crystals coated with 150 A of IN2O3ZnS was recorded during the first 424 days of the mission. A second QCM with crystals coated with 150 A was also flown but not monitored. The flight data and temperature profiles will be presented. After the flight, the QCM's were disassembled and analyzed. The samples included the crystals from the leading and trailing edge samples of both types of coatings along with the reference crystals which were inside the QCM housing. Analyses were performed by scanning electron microscopy, energy dispersive x ray analysis, x ray photoelectron spectroscopy, ion microprobe mass analysis, and reflectance spectroscopy in the infrared and ultraviolet/visible region. The crystals were contaminated predominantly with silicone compounds. The contamination is higher on the leading edge than on the trailing edge, and higher on the exposed crystal than on the reference crystals. No significant differences in composition of the In2O3 crystals were noted. Differences in the reflectance and surface analysis of the Zns crystals will be discussed.
Stuckey, W. K.↗
Growth of (111) GaAs on (111) Si using molecular-beam epitaxy
(111) GaAs layers have been grown epitaxially on (111) Si wafers, both on-axis as well as 3-deg off-axis towards the 1 -1 0 direction, using molecular-beam epitaxy. The grown layers have been characterized by scanning electron microscopy, X-ray diffraction, and transmission electron microscopy.
Radhakrishnan, G.↗
Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates
Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.
Nouhi, A.↗
Secondary ion mass spectrometry study of ex situ annealing of epitaxial GaAs grown on Si substrates
Samples of epitaxial GaAs grown on (100) Si substrates using molecular beam epitaxy were annealed at four different temperatures, from 800 to 950 C. Following annealing, the samples were analyzed using secondary ion mass spectrometry. Depth profiles of Ga, As, and Si reveal optimum conditions for annealing, and place a lower limit on a damage threshold for GaAs/Si substrates.
Radhakrishnan, G.↗
Growth and characterization of CdTe on GaAs/Si substrates
Epitaxial CdTe has been grown on both (100) GaAs/Si and (111) GaAs/Si substrates. A combination of molecular beam epitaxy and metal organic chemical vapor deposition have been employed to achieve this growth. The GaAs layers are grown in Si substrates by molecular beam epitaxy, followed by the growth of CdTe on GaAs/Si substra by metalorganic chemical vapor deposition. X-ray diffraction, photoluminescence, and scanning electron microscopy have been used to characterize the CdTe films.
Radhakrishnan, G.↗
Amorphous silicon deposition diagnostics using coherent anti-Stokes Raman spectroscopy
This paper reports on an in situ silicon deposition process diagnostics, using CARS performed at state-of-the-art a-Si:H film deposition conditions in a reactor designed for a-Si:H solar cell fabrication. The diagnostics procedure measures the silane depletion in an RF plasma as a function of the silane flow rate (where the relationship is linear between 50-percent depletion, at a flow rate of 5.6 sccm, and about 8-percent depletion, at 80 sccm) and the RF power (where the silane depletion is linearly dependent on the RF power in the region of 4 to 12 W). The linear RF power dependence of the silane depletion is considered to be consistent with the mechanism of silane decomposition primarily by electron impact dissociations, while the flow rate dependence is interpreted in terms of the residence time of the SiH4 molecules in the glow discharge region, where an increase of the residence time at a low flow rate results in a high depletion ratio.
Shing, Y. H.↗