Engineering topics

Radisic, Vesna

Publications and source records attributed to Radisic, Vesna.

13 records

NASA NTRS2010

Demonstration of a Submillimeter-Wave HEMT Oscillator Module at 330 GHz

In this work, radial transitions have been successfully mated with a HEMT-based MMIC (high-electron-mobility-transistor-based monolithic microwave integrated circuit) oscillator circuit. The chip has been assembled into a WR2.2 waveguide module for the basic implementation with radial E-plane probe transitions to convert the waveguide mode to the MMIC coplanar waveguide mode. The E-plane transitions have been directly integrated onto the InP substrate to couple the submillimeter-wave energy directly to the waveguides, thus avoiding wire-bonds in the RF path. The oscillator demonstrates a measured 1.7 percent DC-RF efficiency at the module level. The oscillator chip uses 35-nm-gate-length HEMT devices, which enable the high frequency of oscillation, creating the first demonstration of a packaged waveguide oscillator that operates over 300 GHz and is based on InP HEMT technology. The oscillator chip is extremely compact, with dimensions of only 1.085 x 320 sq mm for a total die size of 0.35 sq mm. This fully integrated, waveguide oscillator module, with an output power of 0.27 mW at 330 GHz, can provide low-mass, low DC-power-consumption alternatives to existing local oscillator schemes, which require high DC power consumption and large mass. This oscillator module can be easily integrated with mixers, multipliers, and amplifiers for building high-frequency transmit and receive systems at submillimeter wave frequencies. Because it requires only a DC bias to enable submillimeter wave output power, it is a simple and reliable technique for generating power at these frequencies. Future work will be directed to further improving the applicability of HEMT transistors to submillimeter wave and terahertz applications. Commercial applications include submillimeter-wave imaging systems for hidden weapons detection, airport security, homeland security, and portable low-mass, low-power imaging systems

Radisic, Vesna↗

NASA NTRS2010

A 311-GHz Fundamental Oscillator Using InP HBT Technology

This oscillator uses a single-emitter 0.3- m InP heterojunction bipolar transistor (HBT) device with maximum frequency of oscillation (fmax) greater than 500 GHz. Due to high conductor and substrate losses at submillimeterwave frequencies, a primary challenge is to efficiently use the intrinsic device gain. This was done by using a suitable transmission-line media and circuit topology. The passive components of the oscillator are realized in a twometal process with benzocyclobutene (BCB) used as the primary transmission line dielectric. The circuit was designed using microstrip transmission lines. The oscillator is implemented in a common-base topology due to its inherent instability, and the design includes an on-chip resonator, outputmatching circuitry, and an injection-locking port, the port being used to demonstrate the injection-locking prin ciple. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Ad di tionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. The injection-locking reference signal is generated using a 2 20 GHz frequency synthesizer, followed by a doubler, active tripler, a W-band amplifier, and then a passive tripler. Therefore, the source frequency is multiplied 18 times to obtain a signal above 300 GHz that can be used to injection lock the oscillator. Measurement shows that injection locking has improved the phase noise of the oscillator and can be also used for synchronizing a series of oscillators. A signal conductor is implemented near the BCP -InP interface and the topside of the BCB layer is fully metallized as a signal ground. Because the fields are primarily constrained in the lower permittivity BCB region, this type of transmission line is referred to as an inverted microstrip. In addition, both common-emitter and commonbase circuits were investigated to determine optimum topology for oscillator design. The common -base topology required smaller amount of feedback than the common-emitter design, therefore preserving device gain, and was chosen for the oscillator design. The submillimeter-wave region offers several advantages for sensors and communication systems, such as high resolution and all-weather imaging due to the short-wavelength, and improved communication speeds by access to greater frequency bandwidth. This oscillator circuit is a prototype of the first HBT oscillator operating above 300 GHz. Additional development is necessary to increase the output power of the circuit for radar and imaging applications.

Gaier, Todd↗

NASA NTRS2009

Waveguide Transition for Submillimeter-Wave MMICs

An integrated waveguide-to-MMIC (monolithic microwave integrated circuit) chip operating in the 300-GHz range is designed to operate well on high-permittivity semiconductor substrates typical for an MMIC amplifier, and allows a wider MMIC substrate to be used, enabling integration with larger MMICs (power amplifiers). The waveguide-to- CBCPW (conductor-backed coplanar waveguide) transition topology is based on an integrated dipole placed in the E-plane of the waveguide module. It demonstrates low loss and good impedance matching. Measurement and simulation demonstrate that the loss of the transition and waveguide loss is less than 1-dB over a 340-to-380-GHz bandwidth. A transition is inserted along the propagation direction of the waveguide. This transition uses a planar dipole aligned with the maximum E-field of the TE10 waveguide mode as an inter face between the waveguide and the MMIC. Mode conversion between the coplanar striplines (CPS) that feed the dipole and the CBCPW transmission line is accomplished using a simple air-bridge structure. The bottom side ground plane is truncated at the same reference as the top-side ground plane, leaving the end of the MMIC suspended in air.

Leong, Kevin M.↗

NASA NTRS2009

MMICs with Radial Probe Transitions to Waveguides

A document presents an update on the innovation reported in Integrated Radial Probe Transition From MMIC to Waveguide (NPO-43957), NASA Tech Briefs Vol. 31, No. 5 (May 2007), page 38. To recapitulate: To enable operation or testing of a monolithic microwave integrated circuit (MMIC), it is necessary to mount the MMIC in a waveguide package that typically has cross-sectional waveguide dimensions of the order of a few hundred microns. A radial probe transition between an MMIC operating at 340 GHz and a waveguide had been designed (but not yet built and tested) to be fabricated as part of a monolithic unit that would include the MMIC. The radial probe could readily be integrated with an MMIC amplifier because the design provided for fabrication of the transition on a substrate of the same material (InP) and thickness (50 m) typical of substrates of MMICs that can operate above 300 GHz. As illustrated in the updated document by drawings, photographs, and plots of test data, the concept has now been realized by designing, fabricating, and testing several MMIC/radial- probe integrated-circuit chips and designing and fabricating a waveguide package to contain each chip.

Samoska, Lorene↗

NASA NTRS2009

InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

Radisic, Vesna↗

NASA NTRS2009

Submillimeter-Wave Amplifier Module with Integrated Waveguide Transitions

To increase the usefulness of monolithic millimeter-wave integrated circuit (MMIC) components at submillimeter-wave frequencies, a chip has been designed that incorporates two integrated, radial E-plane probes with an MMIC amplifier in between, thus creating a fully integrated waveguide module. The integrated amplifier chip has been fabricated in 35-nm gate length InP high-electron-mobility-transistor (HEMT) technology. The radial probes were mated to grounded coplanar waveguide input and output lines in the internal amplifier. The total length of the internal HEMT amplifier is 550 m, while the total integrated chip length is 1,085 m. The chip thickness is 50 m with the chip width being 320 m. The internal MMIC amplifier is biased through wire-bond connections to the gates and drains of the chip. The chip has 3 stages, employing 35-nm gate length transistors in each stage. Wire bonds from the DC drain and gate pads are connected to off-chip shunt 51-pF capacitors, and additional off-chip capacitors and resistors are added to the gate and drain bias lines for low-frequency stability of the amplifier. Additionally, bond wires to the grounded coplanar waveguide pads at the RF input and output of the internal amplifier are added to ensure good ground connections to the waveguide package. The S-parameters of the module, not corrected for input or output waveguide loss, are measured at the waveguide flange edges. The amplifier module has over 10 dB of gain from 290 to 330 GHz, with a peak gain of over 14 dB at 307 GHz. The WR2.2 waveguide cutoff is again observed at 268 GHz. The module is biased at a drain current of 27 mA, a drain voltage of 1.24 V, and a gate voltage of +0.21 V. Return loss of the module is very good between 5 to 25 dB. This result illustrates the usefulness of the integrated radial probe transition, and the wide (over 10-percent) bandwidth that one can expect for amplifier modules with integrated radial probes in the submillimeter-regime (>300 GHz).

Samoska, Lorene↗

NASA NTRS2008

HEMT Amplifiers and Equipment for their On-Wafer Testing

Power amplifiers comprising InP-based high-electron-mobility transistors (HEMTs) in coplanar-waveguide (CPW) circuits designed for operation at frequencies of hundreds of gigahertz, and a test set for onwafer measurement of their power levels have been developed. These amplifiers utilize an advanced 35-nm HEMT monolithic microwave integrated-circuit (MMIC) technology and have potential utility as local-oscillator drivers and power sources in future submillimeter-wavelength heterodyne receivers and imaging systems. The test set can reduce development time by enabling rapid output power characterization, not only of these and similar amplifiers, but also of other coplanar-waveguide power circuits, without the necessity of packaging the circuits.

Fung, King man↗

NASA NTRS2008

Compact, Single-Stage MMIC InP HEMT Amplifier

A monolithic micro - wave integrated-circuit (MMIC) singlestage amplifier containing an InP-based high-electron-mobility transistor (HEMT) plus coplanar-waveguide (CPW) transmission lines for impedance matching and input and output coupling, all in a highly miniaturized layout as needed for high performance at operating frequencies of hundreds of gigahertz is described.

Pukala, David↗

NASA NTRS2003

MMIC HEMT Power Amplifier for 140 to 170 GHz

A three-stage monolithic microwave integrated circuit (MMIC) power amplifier that features high-electron-mobility transistors (HEMTs) as gain elements is reviewed. This amplifier is designed to operate in the frequency range of 140 to 170 GHz, which contains spectral lines of several atmospheric molecular species plus subharmonics of other such spectral lines. Hence, this amplifier could serve as a prototype of amplifiers to be incorporated into heterodyne radiometers used in atmospheric science. The original intended purpose served by this amplifier is to boost the signal generated by a previously developed 164-GHz MMIC HEMT doubler and drive a 164-to-328-GHz doubler to provide a few milliwatts of power at 328 GHz.

Samoska, Lorene↗

NASA NTRS2003

164-GHz MMIC HEMT Frequency Doubler

A monolithic microwave integrated circuit (MMIC) that includes a high-electron-mobility transistor (HEMT) has been developed as a prototype of improved frequency doublers for generating signals at frequencies greater than 100 GHz. Signal sources that operate in this frequency range are needed for a variety of applications, notably including general radiometry and, more specifically, radiometric remote sensing of the atmosphere. Heretofore, it has been common practice to use passive (diode-based) frequency multipliers to obtain frequencies greater than 100 GHz. Unfortunately, diode-based frequency multipliers are plagued by high DC power consumption and low conversion efficiency. Moreover, multiplier diodes are not easily integrated with such other multiplier-circuit components as amplifiers and oscillators. The goals of developing the present MMIC HEMT frequency doubler were (1) to utilize the HEMT as an amplifier to increase conversion efficiency (more precisely, to reduce conversion loss), thereby increasing the output power for a given DC power consumption or, equivalently, reducing the DC power consumption for a given output power; and (2) to provide for the integration of amplifier and oscillator components on the same chip. The MMIC frequency doubler (see Figure 1) contains an AlInAs/GaInAs/InP HEMT biased at pinch-off to make it function as a class-B amplifier (meaning that it conducts in half-cycle pulses). Grounded coplanar waveguides (GCPWs) are used as impedance-matching transmission lines. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. Another combination of GCPWs also serves both as a low-pass filter to suppress undesired oscillations at frequencies below 60 GHz and as a DC blocker. Large decoupling capacitors and epitaxial resistors are added in the drain and gate lines to suppress bias oscillations. At the output terminal, the fundamental frequency is suppressed by a quarter-wave open stub, which presents a short circuit at the fundamental frequency and an open circuit at the second harmonic. At an input power of 7 mW, the output power and conversion loss at an output frequency of 164 GHz were found to be 5 dBm (approximately equal to 3.2 mW) and 2 dB, respectively, with a 3-dB output-power bandwidth of 14 GHz. This is the best performance reported to date for an MMIC HEMT frequency doubler above 100 GHz.

Samoska, Lorene↗

NASA NTRS2003

80-GHz MMIC HEMT Voltage-Controlled Oscillator

A voltage-controlled oscillator (VCO) that operates in the frequency range from 77.5 to 83.5 GHz has been constructed in the form of a monolithic microwave integrated circuit (MMIC) that includes high-electron-mobility transistors (HEMTs). This circuit is a prototype of electronically tunable signal sources in the 75-to-110-GHz range, needed for communication, imaging, and automotive radar applications, among others. This oscillator (see Figure 1) includes two AlInAs/GaInAs/InP HEMTs. One HEMT serves mainly as an oscillator gain element. The other HEMT serves mainly as a varactor for controlling the frequency: the frequency-control element is its gate-to-source capacitance, which is varied by changing its gate supply voltage. The gain HEMT is biased for class-A operation (meaning that current is conducted throughout the oscillation cycle). Grounded coplanar waveguides are used as impedance-matching transmission lines, the input and output matching being chosen to sustain oscillation and maximize output power. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. A high density of vias is necessary for suppressing a parallel-plate electromagnetic mode that is undesired because it can propagate energy into the MMIC substrate. Previous attempts at constructing HEMT-based oscillators yielded circuits with relatively low levels of output power and narrow tuning ranges. For example, one HEMT VCO reported in the literature had an output power of 7 dBm (.5 mW) and a tuning range 2-GHz wide centered approximately at a nominal frequency of 77 GHz. In contrast, as shown in Figure 2, the present MMIC HEMT VCO puts out a power of 12.5 dBm (.18 mW) or more over the 6-GHz-wide frequency range from 77.5 to 83.5 GHz

Samoska, Lorene↗

NASA NTRS2003

120-GHz HEMT Oscillator With Surface-Wave-Assisted Antenna

Two monolithic microwave integrated circuits (MMICs) have been designed and built to function together as a source of electromagnetic radiation at a frequency of 120 GHz. One of the MMICs is an oscillator and is the highest-power 120-GHz oscillator reported thus far in the literature. The other MMIC is an end-fire antenna that radiates the oscillator signal. Although these MMICs were constructed as separate units and electrically connected with wire bonds, future oscillator/ antenna combinations could readily be fabricated as monolithic integrated units. Such units could be used as relatively high-power solid-state microwave sources in diverse applications that include automotive radar, imaging, scientific instrumentation, communications, and radio astronomy. As such, these units would be attractive alternatives to vacuum-tube oscillators, which are still used to obtain acceptably high power in the frequency range of interest. The oscillator (see figure) includes a high-electron-mobility transistor (HEMT), with gate-periphery dimensions of 4 by 37 m, in a common-source configuration. The series feedback element of the oscillator is a grounded coplanar waveguide (CPW) at the source. The HEMT is biased for class-A operation (meaning that current is conducted throughout the oscillation cycle) to maximize the output power of the oscillator. Input and output impedance-matching circuit elements are designed to maximize output power and to establish the conditions needed for oscillation. The design of the antenna takes advantage of surface waves, which, heretofore, have been regarded as highly disadvantageous because they can leak power and degrade the performances of antennas that have not been designed to exploit them. Measures taken to suppress surface waves have included complex machining of circuit substrates and addition of separate substrates. These measures are difficult to implement in standard MMIC fabrication processes. In contrast, because the design of the present antenna eliminates the need to suppress surface waves, the fabrication of the antenna is fully compatible with standard MMIC fabrication processes.

Samoska, Lorene↗

NASA NTRS2001

InP MMIC chip set for power sources covering 86-170 GHz

We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.l-μm gatelength InAI/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an fmax above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz.

Ngo, Catherine↗