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Rauf, Shahid (ORCID:0000000156896115)

Publications and source records attributed to Rauf, Shahid (ORCID:0000000156896115).

Future of plasma etching for microelectronics: Challenges and opportunities

Plasma etching is an essential semiconductor manufacturing technology required to enable the current microelectronics industry. Along with lithographic patterning, thin-film formation methods, and others, plasma etching has dynamically evolved to meet the exponentially growing demands of the microelectronics industry that enables modern society. At this time, plasma etching faces a period of unprecedented changes owing to numerous factors, including aggressive transition to three-dimensional (3D) device architectures, process precision approaching atomic-scale critical dimensions, introduction of new materials, fundamental silicon device limits, and parallel evolution of post-CMOS approaches. The vast growth of the microelectronics industry has emphasized its role in addressing major societal challenges, including questions on the sustainability of the associated energy use, semiconductor manufacturing related emissions of greenhouse gases, and others. The goal of this article is to help both define the challenges for plasma etching and point out effective plasma etching technology options that may play essential roles in defining microelectronics manufacturing in the future. The challenges are accompanied by significant new opportunities, including integrating experiments with various computational approaches such as machine learning/artificial intelligence and progress in computational approaches, including the realization of digital twins of physical etch chambers through hybrid/coupled models. These prospects can enable innovative solutions to problems that were not available during the past 50 years of plasma etch development in the microelectronics industry. To elaborate on these perspectives, the present article brings together the views of various experts on the different topics that will shape plasma etching for microelectronics manufacturing of the future.

Engineering↗

Numerical thermalization in 2D PIC simulations: Practical estimates for low-temperature plasma simulations

The process of numerical thermalization in particle-in-cell (PIC) simulations has been studied extensively. It is analogous to Coulomb collisions in real plasmas, causing particle velocity distributions (VDFs) to evolve toward a Maxwellian as macroparticles experience polarization drag and resonantly interact with the fluctuation spectrum. This paper presents a practical tutorial on the effects of numerical thermalization in 2D PIC applications. Scenarios of interest include simulations, which must be run for many thousands of plasma periods and contain a population of cold electrons that leave the simulation space very slowly. This is particularly relevant to many low-temperature plasma discharges and materials processing applications. We present numerical drag and diffusion coefficients and their associated timescales for a variety of grid resolutions, discussing the circumstances under which the electron VDF is modified by numerical thermalization. Though the effects described here have been known for many decades, direct comparison of analytically derived, velocity-dependent numerical relaxation timescales to those of other relevant processes has not often been applied in practice due to complications that arise in calculating thermalization rates in 1D simulations. Using these comparisons, we estimate the impact of numerical thermalization in several examples of low-temperature plasma applications including capacitively coupled plasma discharges, inductively coupled plasma discharges, beam plasmas, and hollow cathode discharges. Finally, we discuss possible strategies for mitigating numerical relaxation effects in 2D PIC simulations.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗