Search NASA⌕ Search

Engineering topics

Reed, Robert A.

Publications and source records attributed to Reed, Robert A..

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs

The energy distributions of electrons in gate-all-around (GAA) Si MOSFETs are analyzed using full-band 3-D Monte Carlo (MC) simulations. Excellent agreement is obtained with experimental current–voltage characteristics. For these 24-nm gate length devices, the electron distribution features a smeared energy peak with an extended tail. This extension of the tail results primarily from the Coulomb scattering within the channel. A fraction of electrons that enter the drain retains their energy, resulting in an out-of-equilibrium distribution in the drain region. The simulated density and average energy of the hot electrons correlate well with experimentally observed device degradation. We propose that the interaction of high-energy electrons with hydrogen-passivated phosphorus dopant complexes within the drain may provide an additional pathway for interface-trap formation in these devices.

42 ENGINEERING↗
DOE OSTI2021

Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting from Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation

Heavy ion, focused x-ray, and pulsed laser single event transient experiments are performed on a silicon epitaxial diode. Collected charge, transient rise times, and transient fall times are calculated and compared between the different sources. It is observed that these transient shape characteristics depend on the source (ion, x-ray, or laser), even when similar amounts of charge are generated. Finally, the observed differences are examined and explained in terms of basic charge collection mechanisms.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Single Event Transient Response of Vertical and Lateral Waveguide-Integrated Germanium Photodiodes

Pulsed-laser induced single event current measurements on two geometries of waveguide-integrated germanium photodiodes were conducted over a range of operating voltages to examine the impact of photodiode geometry on the transient response. Vertical PIN photodiodes exhibit transients with a duration that is relatively independent of the operating voltage while the transient duration in lateral PIN photodiodes depends on operating voltage. Furthermore, the experimental measurements facilitate identification of device dimensions that impact the transient response. In this work, these results can be used to identify potential radiation mitigation strategies for photodiodes operating in a radiation environment. Understanding the implications of design choices is critical for designing integrated photonic systems that balance system performance with tolerance for radiation degradation.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

DFF Layout Variations in CMOS SOI—Analysis of Hardening by Design Options

Four D flip-flop (DFF) layouts were created from the same schematic in Sandia National Laboratories’ CMOS7 silicon-on-insulator (SOI) process. Single-event upset (SEU) modeling and testing showed an improved response with the use of shallow (not fully bottomed) N-type metal-oxide-semiconductor field-effect transistors (NMOSFETs), extending the size of the drain implant and increasing the critical charge of the transmission gates in the circuit design and layout. This research also shows the importance of correctly modeling nodal capacitance, which is a major factor determining SEU critical charge. Accurate SEU models enable the understanding of the SEU vulnerabilities and how to make the design more robust.

42 ENGINEERING↗
DOE OSTI2019

Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO 2 /Al 2 O 3 Dielectrics

Here, total-ionizing-dose mechanisms are investigated in 16-nm InGaAs FinFETs with an HfO 2 /Al 2 O 3 gate-stack. Transistors are irradiated up to 500 krad(SiO 2 ) and annealed at high temperatures. Irradiated devices show negative threshold-voltage V th shifts, subthreshold stretch-out, and leakage current increases. These result from positive charge trapping in the gate oxide and shallow trench insulators, and increases in the interface and border-trap charge densities. Low-frequency noise measurements at different temperatures indicate a significant increase of noise magnitude in irradiated devices at an activation energy of ~0.4 eV. Density functional theory (DFT) calculations strongly suggest that transistor V th shifts are due primarily to hole trapping at oxygen vacancies in HfO 2 , and the increased noise is due primarily to O vacancies in Al 2 O 3 . Additional contributions to the noise from defects in the GaAs buffer layer are also likely, primarily at low temperatures.

total dose effects↗
DOE OSTI2019

Comparison of Sensitive Volumes Associated with Ion-and Laser-Induced Charge Collection in an Epitaxial Silicon Diode

A sensitive volume is developed using pulsed laser-induced collected charge for two bias conditions in an epitaxial silicon diode. These sensitive volumes show good agreement with experimental two photon absorption laser-induced collected charge at a variety of focal positions and pulse energies. When compared to ion-induced collected charge, the laser-based sensitive volume over predicts the experimental collected charge at low bias and agrees at high bias. Here, a sensitive volume based on ion-induced collected charge adequately describes the ion experimental results at both biases. Differences in the amount of potential modulation explain the differences between the ion-and laser-based sensitive volumes at the lower bias. Truncation of potential modulation by the highly doped substrate at the higher bias results in similar sensitive volumes.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2019

Electron Transport Properties of Al x Ga 1 – x N / Ga N Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations

High-electron-mobility transistors (HEMTs) based on Al x Ga 1–x N/GaN heterostructures have great potential for applications in power electronics and radio frequency applications. Operating under large bias and electric fields, hot electrons are present in the channel where they can activate preexisting benign defects that cause scattering or carrier trapping, resulting in device degradation, such as threshold-voltage shifts and transconductance degradation. We report a comprehensive investigation of the electron transport properties of wurtzite-phase GaN and AlN and of an Al 0.25 Ga 0.75 N/GaN HEMT by solving the Boltzmann transport equation with a synchronous ensemble Monte Carlo technique and employing first-principles electronic properties, including the full energy bands, phonon dispersions, and electron-phonon scattering rates. We find that, for electron collisions with the highest-energy optical phonon mode, nonpolar scattering by optical phonons contributes comparable to polar scattering. Polar scattering with acoustic phonons, that is, piezoelectric scattering, is found to be as important as the polar scattering with optical phonons for low-energy electrons at room temperature. Here, we compare the calculated high-field transport characteristics of bulk GaN with previously reported results. We also calculate the nonpolar acoustic deformation potential, nonpolar optical deformation potential, and high-field transport characteristics of bulk AlN. We find that inclusion of piezoelectric scattering results in a low-field electron mobility of approximately 450cm 2 /(V s), which is very close to the experimental value. Simulation results are presented for an Al 0.25 Ga 0.75 N/GaN HEMT, including electric field, average carrier kinetic energy, and drift velocity in the channel. Finally, we present the carrier energy distribution function in the conducting channel, which is key to accurately determine hot-carrier-caused device degradation and identify possible routes to an improved device design.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Analysis of TPA Pulsed-Laser-Induced Single-Event Latchup Sensitive-Area

Two-photon absorption (TPA) testing is employed to analyze the laser-induced latchup sensitive-volume (SV) of a specially designed test structure. This method takes into account the existence of an onset region in which the probability of triggering latchup transitions from zero to one as the laser pulse energy increases. This variability is attributed to pulse-to-pulse variability, uncertainty in measurement of the pulse energy, and variation in local carrier density and temperature. For each spatial position, the latchup probability associated with a given energy is calculated from multiple pulses. The latchup probability data are well-described by a Weibull distribution. The results show that the area between p-n-p-n cell structures is more sensitive than the p+ and n+ source areas, and locations far from the well contacts are more sensitive than those near the contact region. The transition from low probability of latchup to high probability is more abrupt near the source contacts than it is for the surrounding areas.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS2016

Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence.

modeling↗