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Reichman, B.

Publications and source records attributed to Reichman, B..

Method for determining the point of zero zeta potential of semiconductor

A method to determine the potential of zero charge of an unpowdered semiconductor material is presented. The semiconductor material is used as the working electrode of a standard three electrode photoelectrochemical cell. The onset potential of the semiconductor material is measured at several different cell temperatures. The slope of the graph of onset potential versus temperature is used to compute the potential of zero charge.

Reichman, B.↗

Photoelectrochemical cells including chalcogenophosphate photoelectrodes

Photoelectrochemical cells employing chalcogenophosphate (MPX3) photoelectrodes are described where M is selected from the group of transition metal series of elements beginning with scandium (atomic number 21) through germanium (atomic number 32) yttrium (atomic number 39) through antimony (atomic number 51) and lanthanum (atomic number 57) through polonium (atomic number 84); P is phosphorus; and X is selected from the chalogenide series consisting of sulfur, selenium, and tellurium. These compounds have bandgaps in the desirable range from 2.0 eV to 2.2 eV for the photoelectrolysis of water and are stable when used as photoelectrodes for the same.

Reichman, B.↗

Determining the Point of Zero Zeta Potential in Solid Samples

Technique for measuring pzzp in solid samples incorporates sample in photochemical cell and measures temperature dependence of flatband potential. Pzzp is obtained from slope of best straight line through measured points. Tests agree well with expected values. In technique sample does not have to be in powder form.

Byvik, C. E.↗

Layered transition metal thiophosphates /MPX3/ as photoelectrodes in photoelectrochemical cells

Layered crystals of the transition metal thiophosphates were synthesized and characterized for use as photoelectrodes in photoelectrochemical cells. Crystals incorporating tin and manganese show n-type response while those with iron and nickel show p-type response. These materials have a measured indirect bandgap of about 2.1 eV. They show ability to photoelectrolyze water in acid solutions with onset potentials which change in a Nernstian way as the PH of the solution changes. The onset potential is near zero volts versus a saturated calomel electrode at pH 2. At n-type crystals, oxygen could be evolved upon irradiation at underpotentials of 850 mV and at p-type crystals, hydrogen could be evolved at underpotentials of 400 mV, indicating a net gain in energy conversion. All crystals were unstable in basic solution. Liquid junction photovoltaic cells in iodide-triiodide acid solution using these layered materials were also constructed and found to have low efficiences.

Byvik, C. E.↗

Photoelectrochemical response of some layered chalcogenophosphate compounds /MPX3/

New photoelectrochemical results for the layered chalcogenophosphate compounds MPX3, FePS3, NiPS3, and SnPS3 are presented. The compounds were grown by iodine vapor transport in quartz ampules from a stoichiometric amount of the elements. Crystals of the layered type up to 10 mm x 10 mm x 0.1 mm were grown. The results of the layered compounds from the MPX3 series show good stability in acid solutions under photoelectrolysis condition. The relatively slow increase in the photocurrent with increasing electrode potential suggests high recombination rates for the photogenerated carriers in these layered materials. It is noted that improvements may be possible by, for example, optimizing the preparation of the crystals and the electrode surfaces.

Byvik, C. E.↗

Photovoltage response to temperature change at oxide semiconductor electrodes

A study has been carried out on single crystal electrodes of TiO2, SrTiO3, and alpha-Fe2O3 and polycrystalline WO3 to investigate the effect of cell temperature on the onset potential of n-type oxide semiconductor electrodes. It is found that the change of the onset potential with temperature is due to the potential change across the Helmholtz layer. The amount of this change depends on the point of zero zeta potential (pzzp) of the semiconductor electrode. The possibility of increasing the solar-to-chemical energy conversion efficiency of a photochemical cell by increasing the cell temperature is discussed.

Reichman, B.↗

Photoproduction of I2, Br2, and Cl2 on n-semiconducting powder

The photosynthetic production of Br2 and Cl2 and the photocatalytic production of I2 from aqueous solutions of the respective halide ions in the presence of platinized semiconducting n-TiO2 powder are reported. Reactions were produced in 2-3 M oxygen-saturated aqueous solutions of KI, KBr or NaCl containing Pt-TiO2 powder which were irradiated by a high-pressure mercury lamp at a power of 400 mW/sq cm. Halogens are found to be produced in greater quantities when platinized TiO2 powders are used rather than pure TiO2, and rates of halogen production are observed to increase from Cl2 to Br2 to I2. The presence of the synthetic reactions producing Br2 and Cl2 with a net influx of energy indicates that an effective separation of the photoproduced electron-hole pair occurs in the semiconductor. Quantum efficiencies of the reaction, which increase with decreasing solution pH, are found to be as high as 30%, implying a solar-to-chemical energy conversion efficiency between 0.03% and 3% for the case of chlorine production. It is concluded that the photoproduction of halogens may be of practical value if product halogens are efficiently removed from the reaction cell.

Reichman, B.↗

Photoproduction of halogens using platinized TiO2

Unlike electrolysis of halide salt solutions, technique using powdered titanium dioxide catalyst requires no external power other than ultraviolet radiation source. Semiconductor powders photocatalyze and photosynthesize many useful reactions; applications are production of halogen molecules, oxidation of hazardous materials in wastewater, and conversion of carbon monoxide to carbon dioxide.

Reichman, B.↗