Engineering topics
Publications and source records attributed to Reid, Obadiah.
A 10GHz microwave reflectometer was developed to measure the mobility-lifetime product in thin film semiconductors. Development focused on perovskite films (an emerging photovoltaic material) as well as CdTe (an established photovoltaic material).
In this work, charge pairs of varying separation distance are interpreted from photoinduced absorption detected magnetic resonance (PADMR) spectroscopy of organic, small molecule dilute donor/acceptor thin films. We report that a donor/acceptor film that generates few free charges at room temperature yet has a relatively large, calculated driving force for electron transfer generates a large concentration of tightly bound CT states when measured with PADMR. These states are markedly absent in films with smaller driving forces yet higher free charge yields which instead only show charge-separated state signals with weaker spin coupling. We interpret this result to be in support of a hypothesis where a larger reorganization energy associated with charge transfer to tightly bound CT states means that they are primarily generated in systems far from the Marcus optimum for free charge yield. And the highest free charge yielding systems instead predominantly undergo long-range charge separation into the acceptor host.
Hybrid lead halide perovskites have superior charge transport properties to all-inorganic perovskites, but high-resolution spectroscopic radiation detectors have not been realized. Here we show that surface deep traps severely limit charge collection in formamidinium lead bromide (FAPbBr3) single-crystal devices, despite having a good bulk transport property. Three types of defect on the crystal surface, namely, FA vacancies, uncoordinated lead and Pb-Pb dimers caused by bromide loss, are found to form deep traps, resulting in non-radiative charge recombinations at the metal/perovskite interface. By tailoring the passivation functional groups, we find that ammonium bromide can passivate all these three deep traps on FAPbBr3 surfaces, improving the charge collection efficiency to near unity. The comparable bulk and surface recombination lifetimes indicate that all the surface defects are effectively passivated. Surface passivation also reduces the dark current by 10 times and decreases the dark counts by ~60 times. The energy resolution of the 137Cs spectra acquired using the FAPbBr3 detectors is improved from 5.7% to 1.7% when all the surface defects are passivated without changing the bulk properties, which is the best among solution-grown semiconductor detectors. Surface passivation is stable for more than six months, and FAPbBr3 spectroscopic detectors can operate at unprecedented high temperatures of more than 130 degrees C.