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Repins, Ingrid (ORCID:0000000277182936)

Publications and source records attributed to Repins, Ingrid (ORCID:0000000277182936).

11 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Energy Yield Loss Due to LETID

This presentation presents an open-source LETID model part of the PVDegradationTools, which can calculate solar modules degradation due to Light and Elevated Temperature (LETID).

degradation↗
DOE OSTI2023

An Open-Source Python Library for Modeling LETID and LID in Silicon Solar Cells and Wafers

This poster demonstrates an (in development) open-source software library, written in python, to aid in modeling and understanding light- and elevated temperature-induced degradation (LETID) and boron-oxygen light-induced degradation (B-O LID) in silicon solar cells and wafers. We discuss the underlying equations and necessary input parameters for constructing realistic models. We demonstrate several use cases for the library, including modeling LETID progression in scenarios like indoor, accelerated tests and outdoor field deployment. We also demonstrate using the library to model B-O LID, and we demonstrate using the library to model degradation in passivated wafers, rather than solar cells.

LETID↗
DOE OSTI2023

Results from an International Interlaboratory Study on Light- and Elevated Temperature-Induced Degradation (LETID) in Solar Modules

This presentation reports recently submitted results from an international interlaboratory comparison study on light- and elevated temperature-induced degradation (LETID) on crystalline silicon photovoltaic (PV) modules. A large global network of PV module manufacturers and PV testing laboratories collaborated to design a protocol for LETID detection, and screen a large and diverse set of prototype modules for LETID. We summarize the range of observed degradation and provide initial conclusions on the reproducibility of results across labs. In LETID-sensitive modules, both open-circuit voltage (VOC) and short-circuit current (ISC) degrade by a roughly similar magnitude. We observe, as do previous studies, that LETID affects each cell in a module differently. An investigation of the potential mismatch losses caused by nonuniform LETID degradation found that mismatch loss is insignificant compared to the direct LETID-related losses. We summarize the conclusions drawn from the study, provide an update on a forthcoming standard technical specification for LETID testing of PV modules (IEC TS 63342 ED1), and discuss unresolved questions and potential future work on LETID in PV modules.

degradation↗
DOE OSTI2022

Life after 30 years - a PV system in Colorado

The PV system consisted of 155 monocrystalline Si Arco M53 panels, installed in 1987. 80 were installed on a fixed tilt rack, and 75 on 5 separate dual-axis passive trackers. The system was decommissioned in 2017 due a campus re-design and building expansion at the Platte River Power Authority (PPRA) site. Prior to decommissioning a site visit established the following failure type observations: EVA browning (100%), cracked cells (60%), and cracked wires or grommets (9%, or more if replacements were made selectively on cracked parts). EVA browning is typical in modules of this vintage, whereas the occurrence of so many cracked cells is surprising and is likely weather-related. The fairly frequent occurrence of cracked wires and grommets serves as a reminder that accelerated testing of these components is important for goals of low-cost 50-year energy generation. In smaller numbers, thermal effects (7%), bent frames (1%), and cell corrosion (<1%) were observed. A sample of 20 modules was selected and brought to NREL for in-depth characterization. Because baseline measurements were not available using the nameplate rating, which can be inaccurate, revealed a mean module sample degradation of 0.7 %/year. Sporadic production data during the 30 years determined a system degradation rate closer to 1.2 %/year. Subsequently, four of these modules were re-mounted outdoors at NREL and are now approaching a total lifetime of 34 years.

durability↗
DOE OSTI2022

LETID in Legacy and Modern PV Modules: Accelerated Testing and Field Deployment

The kinetics of light- and elevated temperature-induced degradation (LETID) in silicon solar cells depend on the precise operating excess carrier density (?n) of the device. This dependency causes differences in the way LETID manifests in modern, higher-efficiency devices compared to lower-efficiency, legacy devices that might have been deployed in the field in previous years. In this work we model how different vintages of devices are expected to behave in both accelerated laboratory testing, as well as field deployment. The differing excess carrier densities encountered in various module vintages has implications both for interpreting accelerated test data, as well as identifying, diagnosing, and potentially treating LETID in the field.

excess carrier density↗
DOE OSTI2021

Proceedings of the PV Reliability Workshop, February 22-26, 2021

The 2021 Photovoltaic Reliability Workshop (PVRW) continued in the longstanding PVRW tradition of engaged, passionate presentation and discussion, though in a new virtual format for 2021. The workshop was hosted over 5 days, with each day featuring two oral presentation sessions and one interactive poster session. In these proceedings, you will find links to video recordings for most of the oral presentations and poster presentations along with Q&A sessions and panel discussions. Each presentation is linked from its title in this agenda.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2020

LID and LeTID Impacts to PV Module Performance and System Economics: Draft Analysis

This webinar is a technical review of the measurements and causes of BO LID, UV LID and LeTID, as well as modeling their impacts to PV project financial metrics. We will first review how Boron-Oxygen complexes form and detail the range of impacts to PV module power ratings over time and across climates. Similarly, we will also discuss the measurements and extent of UV LID over time and across climates. Then, we will demonstrate a methodology for translating these effects to pro forma cash flow models and their impacts to PV project financial returns and levelized cost of electricity (LCOE). We will conclude with estimates of the value of solutions to these degradation mechanisms.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2020

High Efficiency Silicon Module Degradation - From Atoms to Systems: Preprint

For PV to be cost competitive with traditional energy sources reliability is of critical importance. Historically, PV reliability has focused on the module packaging because degradation and failure modes were directly linked to the packaging. Today, in addition to module packaging cell related reliability issues can be observed. We show that silicon heterojunction (SHJ) degradation is directly linked to the re-distribution of hydrogen (H) near the interface between the amorphous-silicon (a-Si) and silicon bulk. PERC modules show a similar decline in carrier lifetime indicating that not the packaging but the cells are also changing during field exposure. Examination of a stressed PERC cell showed a similar H redistribution in the cell. Understanding the degradation mechanism at the atomic level is important in facilitating possible mitigating mechanisms and more accurately projecting performance.

degradation↗