Pressure sensitive transducers Patent
Miniature electromechanical junction transducer operating on piezojunction effect and utilizing epoxy for stress coupling component
Garfein, A.↗
Engineering topics
Rindner, W.
Publications and source records attributed to Rindner, W..
Multiport semiconductor devices
Device, made of a variety of semiconductors, incorporates three or more terminals. Between at least two terminals, switching action occurs. The other terminal pair performs either another switching function or a control function. This device is useful for computer-logic or memory applications.
Holmstrom, F. R.↗
Titanium-nickel switches - A new class of electro-thermo-mechanical devices
Electro-thermal-mechanical switches based on shape-memory effect in Ti-Ni alloys
Hopkins, J. B.↗
Voltage tunable Gunn-type microwave generator Patent
Voltage tunable Gunn effect semiconductor for microwave generation
Rindner, W.↗
A miniature electromechanical tunnel diode transducer
Miniature electromechanical gallium antimonide tunnel diode transducer theory fabrication and performance
Garfein, A.↗
Miniature backward-diode pressure sensor features stability and low power consumption
Backward-diode pressure transducer retains the advantages of a tunneling mechanism, requires no shunting resistor, operates at a low voltage level, and consumes little power.
Garfein, A.↗
A miniature electromechanical tunnel diode transducer
Miniature electromechanical tunnel diode transducer
Garfein, A.↗
Simplified theory and transducer potentialities of the ''pinch effect'' in semiconductors
Simplified theory and transducer potentialities of pinch effect in semiconductors
Pittelli, E. E.↗
Pressure-sensitive bonded junction transducers
Miniature transducers involve the use of appropriate commercial epoxy resins. Design protects the sensitive semiconductor surface from ambients and excludes an air space in the device capsule.
Iannini, A.↗
A miniature piezo-junction pressure transducer.
Miniature piezojunction pressure transducer incorporating GaSb and GaAs tunnel diodes
Garfein, A.↗
Miniature tunnel diode transducers.
Miniature tunnel diode transducers having operation related to controllable band gap modulation mechanism
Garfein, A.↗
Tunnel and excess currents in stressed Esaki diodes.
Tunnel and excess currents in Esaki diodes compatible with reversible introduction of active intermediate tunneling levels
TUNNELING↗
Effects of stress-induced band-gap widening and defects in GaAs junctions.
Compressive stress effect on band gap widening and diffusion current in GaAs junctions
JUNCTION TRANSISTOR↗
Equivalence of stress- and radiation-induced defects in degenerate p-n junctions.
Equivalence of stress and electron-irradiation induced defects in degenerate p-n germanium junctions as indicated in similar voltage-anneal characteristics
P-N JUNCTION↗
Design, development, fabrication, and delivery of three /3/ strain gage accelerometers Final report, Jun. 23, 1964 - Jun. 23, 1965
Strain gauge accelerometer based on anisotropic stress effect in P-N junctions using piezoelectric crystals
P-N JUNCTION↗