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Roccapriore, Kevin

Publications and source records attributed to Roccapriore, Kevin.

27 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Enabling Autonomous Electron Microscopy for Networked Computation and Steering

Advanced electron microscopy workflows require an ecosystem of microscope instruments and computing systems possibly located at different sites to conduct remotely steered and automated experiments. Current workflow executions involve manual operations for steering and measurement tasks, which are typically performed from control workstations co-located with microscopes; consequently, their operational tempo and effectiveness are limited. We propose an approach based on separate data and control channels for such an ecosystem of Scanning Transmission Electron Microscopes (STEM) and computing systems, for which no general solutions presently exist, unlike the neutron and light source instruments. We demonstrate automated measurement transfers and remote steering of Nion STEM physical instruments over site networks. We propose a Virtual Infrastructure Twin (VIT) of this ecosystem, which is used to develop and test our steering software modules without requiring access to the physical instrument infrastructure. Additionally, we develop a VIT for a multiple laboratory scenario, which illustrates the applicability of this approach to ecosystems connected over wide-area networks, for the development and testing of software modules and their later field deployment.

Al Najjar, Anees↗
DOE OSTI2022

Automated Experiment in 4D-STEM: Exploring Emergent Physics and Structural Behaviors

Automated experiments in 4D scanning transmission electron microscopy (STEM) are implemented for rapid discovery of local structures, symmetry-breaking distortions, and internal electric and magnetic fields in complex materials. Deep kernel learning enables active learning of the relationship between local structure and 4D-STEM-based descriptors. With this, efficient and “intelligent” probing of dissimilar structural elements to discover desired physical functionality is made possible. This approach allows effective navigation of the sample in an automated fashion guided by either a predetermined physical phenomenon, such as strongest electric field magnitude, or in an exploratory fashion. Therefore, we verify the approach first on preacquired 4D-STEM data and further implement it experimentally on an operational STEM. The experimental discovery workflow is demonstrated using graphene and subsequently extended toward a lesser-known layered 2D van der Waals material, MnPS 3 . This approach establishes a pathway for physics-driven automated 4D-STEM experiments that enable probing the physics of strongly correlated systems and quantum materials and devices, as well as exploration of beam-sensitive materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Sculpting the Plasmonic Responses of Nanoparticles by Directed Electron Beam Irradiation

Spatial confinement of matter in functional nanostructures has propelled these systems to the forefront of nanoscience, both as a playground for exotic physics and quantum phenomena and in multiple applications including plasmonics, optoelectronics, and sensing. In parallel, the emergence of monochromated electron energy loss spectroscopy (EELS) has enabled exploration of local nanoplasmonic functionalities within single nanoparticles and the collective response of nanoparticle assemblies, providing deep insight into associated mechanisms. However, modern synthesis processes for plasmonic nanostructures are often limited in the types of accessible geometry, and materials and are limited to spatial precisions on the order of tens of nm, precluding the direct exploration of critical aspects of the structure-property relationships. Here, the atomic-sized probe of the scanning transmission electron microscope is used to perform precise sculpting and design nanoparticle configurations. Using low-loss EELS, dynamic analyses of the evolution of the plasmonic response are provided. It is shown that within self-assembled systems of nanoparticles, individual nanoparticles can be selectively removed, reshaped, or patterned with nanometer-level resolution, effectively modifying the plasmonic response in both space and energy. This process significantly increases the scope for design possibilities and presents opportunities for unique structure development, which are ultimately the key for nanophotonic design.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Pulsed-laser epitaxy of metallic delafossite PdCrO 2 films

Alternate stacking of a highly conducting metallic layer with a magnetic triangular layer found in delafossite PdCrO 2 provides an excellent platform for discovering intriguing correlated quantum phenomena. Thin film growth of delafossites may enable not only the tuning of the basic physical properties beyond what bulk materials can exhibit, but also the development of novel hybrid materials by interfacing with dissimilar materials, yet this has proven to be extremely challenging. Here, we report the epitaxial growth of metallic delafossite PdCrO 2 films by pulsed laser epitaxy (PLE). The fundamental role of the PLE growth conditions, epitaxial strain, and chemical and structural characteristics of the substrate is investigated by growing under various growth conditions and on various types of substrates. While strain plays a large role in improving the crystallinity, the direct growth of epitaxial PdCrO 2 films without impurity phases was not successful. We attribute this difficulty to both the chemical and structural dissimilarities with the substrate and volatile nature of the PdO sublayer, which make nucleation of the right phase difficult. This difficulty was overcome by growing CuCrO 2 buffer layers before PdCrO 2 films were grown. Unlike PdCrO 2 , CuCrO 2 films were readily grown with a relatively wide growth window. Only a monolayer thick buffer layer was sufficient to grow the correct PdCrO 2 phase. This result indicates that the epitaxy of Pd-based delafossites is extremely sensitive to the chemistry and structure of the interface, necessitating near perfect substrate materials. The resulting films are commensurately strained and show an antiferromagnetic transition at 40 K that persists down to as thin as 3.6 nm in thickness. This work provides key insights into advancing the epitaxial growth of the broader class of metallic delafossites for both studying the basic physical properties and developing new spintronic and computing devices.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes

A dense array of vertically aligned indium antimonide (InSb) nanowires with high aspect ratio (diameter 150 nm, length 20 μ m) were grown in the pores of a track-etched polycarbonate membrane via a one-step electrochemical method. There are several reports on InSb nanowire growth in the pores of a mechanically rigid, nano-channel alumina template (NCA), where nanowire growth occurs in the pores of the NCA. This work on InSb nanowire growth in pores of track-etched polycarbonate (PC) membrane sheds light on the various factors that affect nucleation and nanowire growth. The average length and diameter of the as-grown nanowires was about 10 μ m and 150 nm, respectively. Two possible mechanisms accounting for two different morphologies of the as-grown nanowires are proposed. The polycrystallinity observed in some of the nanowires is explained using the 3D ‘nucleation-coalescence’ mechanism. On the other hand, single crystal nanowires with a high density of twin defects and stacking faults grow epitaxially by a two-dimensional (2D) nucleation/growth mechanism. To assess the electrical quality of the nanowires, two- and four-terminal devices were fabricated using a single InSb nanowire contacted by two Ni electrodes. It was found that, at low bias, the ohmic current is controlled by charge diffusion from the bulk contacts. On the other hand, at high bias, the effects of space charge limited current (SCLC) are evident in the current–voltage behavior, characteristic of transport through structures with reduced electrostatic screening. A cross-over from ohmic to SCLC occurs at about 0.14 V, yielding a free carrier concentration of the order of 10 14 cm -3 .

36 MATERIALS SCIENCE↗