Engineering topics

Rodriguez, Luciano Garcia

Publications and source records attributed to Rodriguez, Luciano Garcia.

2 records

DOE OSTI2022

System Integration Analysis for Modular Solid-State Substations

Structural modularity is critical to solid-state transformer (SST) and solid-state power substation (SSPS) concepts, but operational aspects related to this modularity are not yet fully understood. Previous studies and demonstrations of modular power conversion systems assume identical module compositions, but dependence on module uniformity undercuts the value of the modular framework. In this project, a hierarchical control approach was developed for modular SSTs which achieves system-level objectives while ensuring equitable power sharing between nonuniform building block modules. This enables module replacements and upgrades which leverage circuit and device technology advancements to improve system-level performance. The functionality of the control approach is demonstrated in detailed time-domain simulations. Results of this project provide context and strategic direction for future LDRD projects focusing on technologies supporting the SST crosscut outcome of the resilient energy systems mission campaign.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2022

Identification of the defect dominating high temperature reverse leakage current in vertical GaN power diodes through deep level transient spectroscopy

Deep level defects in wide bandgap semiconductors, whose response times are in the range of power converter switching times, can have a significant effect on converter efficiency. We use Deep Level Transient Spectroscopy (DLTS) to evaluate such defect levels in the n- drift layer of vertical GaN (v-GaN) power diodes with VBD ~ 1500 V. DLTS reveals three energy levels that are at ~0.6 eV (highest density), ~0.27 eV (lowest density) and ~ 45 meV (a dopant level) from the conduction band. Dopant extraction from Capacitance-Voltage measurement test (C-V) at multiple temperatures enables trap density evaluation, and the ~0.6 eV trap has a density of 1.2 × 10 15 cm -3 . Here, the 0.6 eV energy level and its density are similar to a defect that is known to cause current collapse in GaN based surface conducting devices (like HEMTs). Analysis of reverse bias currents over temperature in the v-GaN diodes indicates a predominant role of the same defect in determining reverse leakage current at high temperatures, reducing switching efficiency.

42 ENGINEERING↗