Engineering topics

Rohrer, Norman J.

Publications and source records attributed to Rohrer, Norman J..

5 records

NASA NTRS1993

A 10 GHz Y-Ba-Cu-O/GaAs hybrid oscillator proximity coupled to a circular microstrip patch antenna

A 10 GHz hybrid Y-Ba-Cu-O / GaAs microwave oscillator proximity coupled to a circular microstrip antenna was designed, fabricated and characterized. The oscillator was a reflection mode type using a GaAs MESFET as the active element. The feedline, transmission lines, RF chokes, and bias lines were all fabricated from YBa2Cu3O(7-x) superconducting thin films on a 1 cm x 1 cm lanthanum aluminate substrate. The output feedline of the oscillator was wire bonded to a superconducting feedline on a second 1 cm x 1 cm lanthanum aluminate substrate, which was in turn proximity coupled to a circular microstrip patch antenna. Antenna patterns from this active patch antenna and the performance of the oscillator measured at 77 K are reported. The oscillator had a maximum output power of 11.5 dBm at 77 K, which corresponded to an efficiency of 10 percent. In addition, the efficiency of the microstrip patch antenna together with its high temperature superconducting feedline was measured from 85 K to 30 K and was found to be 71 percent at 77 4 increasing to a maximum of 87.4 percent at 30 K.

Rohrer, Norman J.↗

NASA NTRS1993

A 10 GHz Y-Ba-Cu-O/GaAs hybrid oscillator proximity coupled to a circular microstrip patch antenna

A 10 GHz hybrid YBCO/GaAs microwave oscillator proximity coupled to a circular microstrip antenna has been designed, fabricated, and characterized. The oscillator was a reflection mode type using a GaAs MESFET as the active element. The feedline, transmission lines, RF chokes, and bias lines were all fabricated from YBCO superconducting thin films on a 1 cm x 1 cm lanthanum aluminate substrate. The output feedline of the oscillator was wire bonded to a superconducting feedline on a second 1 cm x 1 cm lanthanum aluminate substrate, which was in turn proximity coupled to a circular microstrip patch antenna. Antenna patterns from this active patch antenna and the performance of the oscillator measured at 77 K are reported. The oscillator had a maximum output power of 11.5 dBm at 77 K, which corresponded to an efficiency of 10 percent. In addition, the efficiency of the microstrip patch antenna together with its high temperature superconducting feedline was measured from 85 K to 30 K and was found to be 71 percent at 77 K, increasing to a maximum of 87.4 percent at 30 K.

Rohrer, Norman J.↗

NASA NTRS1990

Sequentially evaporated thin film YBa2Cu3O(7-x) superconducting microwave ring resonator

There is great interest in the application of thin film high temperature superconductors in high frequency electronic circuits. A ring resonator provides a good test vehicle for assessing the microwave losses in the superconductor and for comparing films made by different techniques. Ring resonators made of YBa2Cu3O(7-x) have been investigated on LaAlO3 substrates. The superconducting thin films were deposited by sequential electron beam evaporation of Cu, Y, and BaF2 with a post anneal. Patterning of the superconducting film was done using negative photolithography. A ring resonator was also fabricated from a thin gold film as a control. Both resonators had a gold ground plane on the backside of the substrate. The ring resonators' reflection coefficients were measured as a function of frequency from 33 to 37 GHz at temperatures ranging from 20 K to 68 K. The resonator exhibited two resonances which were at 34.5 and 35.7 GHz at 68 K. The resonant frequencies increased with decreasing temperature. The magnitude of the reflection coefficients was in the calculation of the unloaded Q-values. The performance of the evaporated and gold resonator are compared with the performance of a laser ablated YBa2Cu3O(7-x) resonator. The causes of the double resonance are discussed.

Rohrer, Norman J.↗

NASA NTRS1988

Characterization of ZrO2 buffer layers for sequentially evaporated Y-Ba-CuO on Si and Al2O3 substrates

Thin film high temperature superconductors have the potential to change the microwave technology for space communications systems. For such applications it is desirable that the films be formed on substrates such as Al2O3 which have good microwave properties. The use of ZrO2 buffer layers between Y-Ba-Cu-O and the substrate has been investigated. These superconducting films have been formed by multilayer sequential electron beam evaporation of Cu, BaF2 and Y with subsequent annealing. The three layer sequence of Y/BaF2/Cu is repeated four times for a total of twelve layers. Such a multilayer film, approximately 1 micron thick, deposited directly on SrTiO3 and annealed at 900 C for 45 min produces a film with a superconducting onset of 93 K and critical temperature of 85 K. Auger electron spectroscopy in conjunction with argon ion sputtering was used to obtain the distribution of each element as a function of depth for an unannealed film, the annealed film on SrTiO3 and annealed films on ZrO2 buffer layers. The individual layers were apparent. After annealing, the bulk of the film on SrTiO3 is observed to be fairly uniform while films on the substrates with buffer layers are less uniform. The Y-Ba-Cu-O/ZrO2 interface is broad with a long Ba tail into the ZrO2, suggesting interaction between the film and the buffer layer. The underlying ZrO2/Si interface is sharper. The detailed Auger results are presented and compared with samples annealed at different temperatures and durations.

Valco, George J.↗

NASA NTRS1988

Sequentially evaporated thin Y-Ba-Cu-O superconductor films: Composition and processing effects

Thin films of YBa2Cu3O(7-beta) have been grown by sequential evaporation of Cu, Y, and BaF2 on SrTiO3 and MgO substrates. The onset temperatures were as high as 93 K while T sub c was 85 K. The Ba/Y ratio was varied from 1.9 to 4.0. The Cu/Y ratio was varied from 2.8 to 3.4. The films were then annealed at various times and temperatures. The times ranged from 15 min to 3 hr, while the annealing temperatures used ranged from 850 C to 900 C. A good correlation was found between transition temperature (T sub c) and the annealing conditions; the films annealed at 900 C on SrTiO3 had the best T sub c's. There was a weaker correlation between composition and T sub c. Barium poor films exhibitied semiconducting normal state resistance behavior while barium rich films were metallic. The films were analyzed by resistance versus temperature measurements and scanning electron microscopy. The analysis of the films and the correlations are reported.

Valco, George J.↗