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Romanelli, Marisa

Publications and source records attributed to Romanelli, Marisa.

3 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Superconducting penetration depth through a Van Hove singularity: Sr 2 ⁢RuO 4 under uniaxial stress

A plethora of experiments in Sr 2 RuO 4 have reached conflicting conclusions about the symmetry of the superconducting gap. To probe the gap’s structure in k-space, we use strain to continuously tune the band structure through a Van Hove singularity (VHS) while imaging the superconductivity with scanning SQUID microscopy. We find that the superfluid density peaks at the VHS and that the temperature dependence of the penetration depth is T 2 -quadratic over the entire measured range of strain ε. These results are consistent with a gap structure that has vertical line nodes, experimentally confirming that non-local effects in the Meissner screening can lead to T 2 behavior and clarifying the nature of the low-energy excitations in Sr 2 RuO 4 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Engineering Anomalously Large Electron Transport in Topological Semimetals

Abstract Anomalous transport of topological semimetals has generated significant interest for applications in optoelectronics, nanoscale devices, and interconnects. Understanding the origin of novel transport is crucial to engineering the desired material properties, yet their orders of magnitude higher transport than single‐particle mobilities remain unexplained. This work demonstrates the dramatic mobility enhancements result from phonons primarily returning momentum to electrons due to phonon‐electron dominating over phonon–phonon scattering. Proving this idea, proposed by Peierls in 1932, requires tuning electron and phonon dispersions without changing symmetry, topology, or disorder. This is achieved by combining de Haas ‐ van Alphen (dHvA), electron transport, Raman scattering, and first‐principles calculations in the topological semimetals MX 2 (M = Nb, Ta and X = Ge, Si). Replacing Ge with Si brings the transport mobilities from an order magnitude larger than single particle ones to nearly balanced. This occurs without changing the crystal structure or topology and with small differences in disorder or Fermi surface. Simultaneously, Raman scattering and first‐principles calculations establish phonon–electron dominated scattering only in the MGe 2 compounds. Thus, this study proves that phonon‐drag is crucial to the transport properties of topological semimetals and provides insight to engineer these materials further.

36 MATERIALS SCIENCE↗