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Romanofsky, R. R.

Publications and source records attributed to Romanofsky, R. R..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

A Comparison of MOCLD With PLD Ba(x)Sr(1-x)TiO3 Thin Films on LaAlO3 for Tunable Microwave Applications

Historically, tunable dielectric devices using thin crystalline Ba(x)Sr(1-x),TiO3 (BST) films deposited on lattice-matched substrates, such as LaAlO3 have generally been grown using pulsed laser deposition (PLD). Highly oriented BST films can be grown by PLD but large projects are hampered by constraints of deposition area, deposition time and expense. The Metal-Organic Chemical Liquid Deposition (MOCLD) process allows for larger areas, faster turnover and lower cost. Several BST films deposited on LaAlO, by MOCLD have been tested in 16 GHz coupled microstrip phase shifters. They can be compared with many PLD BST films tested in the same circuit design. The MOCLD phase shifter performance of 293 degree phase shift with 53 V/micron dc bias and a figure of merit of 47 degree/dB is comparable to the most highly oriented PLD BST films. The PLD BST films used here have measured XRD full-width-at-half-maxima (FWHM) as low as 0.047 degrees. The best FWHM of these MOCLD BST films has been measured to be 0.058 degrees.

VanKeuls, F. W.↗
NASA NTRS2002

Improved Dielectric Properties of Heterostructured Ba2.5Sr0.5TiO3 Thin Film Composites for Microwave Dielectric Devices

In the present work we have deposited MgO and Ba(sub 0.5)Sr(sub 0.5)TiO(sub 3)(BST50) thin layers in different sequences to make MgO:BST50 hetero-structured thin films. These films were characterized by X-ray diffraction and Rutherford backscattering technique and found to be highly (100) textured. The figure of merit {(C(sub0)-C(sub v)/(C(sub0-tandelta)} of the hetero-structured films was found to be higher as compared to pure BST50 films measured at 1 MHz frequency with electric field of 25.3 kV/cm. These films were used to make eight element coupled micro-strip phase shifter and characterized in a frequency range of 13-15 GHz. The high frequency figure of merit (kappa factor, defined as the ratio of degree of phase shift per dB loss) measured at around 14 GHz with electric field of 333 kV/cm has been markedly improved (around 64.28 deg/dB for hetero-structured film as compared to 24.65 deg /dB for pure film). Improvement in dielectric properties in a wide frequency range in the MgO:BST are believed to be due to the higher densification of the hetero-structured films.

Jain, M.↗
NASA NTRS2002

A Comparison of MOCLD With PLD Ba(x)Sr(1-x)TiO3 Thin Films on LaAlO3 for Tunable Microwave Applications

Historically, tunable dielectric devices using thin crystalline Ba(x)Sr(1-x)TiO3 (BST) films deposited on lattice-matched substrates, such as LaAlO3, have generally been grown using pulsed laser deposition (PLD). Highly oriented BST films can be grown by PLD but large projects are hampered by constraints of deposition area, deposition time and expense. The Metal-Organic Chemical Liquid Deposition (MOCLD) process allows for larger areas, faster turnover and lower cost. Several BST films deposited on LaAlO3 by MOCLD have been tested in 16 GHz coupled microstrip phase shifters. They can be compared with many PLD BST films tested in the same circuit design. The MOCLD phase shifter performance of 293 deg. phase shift with 53 V/micron dc bias and a figure of merit of 47 deg./dB is comparable to the most highly oriented PLD BST films. The PLD BST films used here have measured XRD full-width-at-half-maxima (FWHM) as low as 0.047 deg.. The best FWHM of these MOCLD BST films has been measured to be 0.058 deg.

VanKeuls, F. W.↗
NASA NTRS2002

A Statistical Analysis of Laser Ablated Ba(Sub 0.50)Sr(Sub 0.50)TiO(Sub 3)/LaAlO(Sub 3) Films for Microwave Applications

The NASA Glenn Research Center is constructing a 616 element scanning phased array antenna using thin film Ba(sub x)Sr(sub 1-x)TiO(sub 3) based phase shifters. A critical milestone is the production of 616 identical phase shifters at 19 GHz with [asymptotically equal to]4 dB insertion loss and at least 337.5 deg phase shift with 3 percent bandwidth. It is well known that there is a direct relationship between dielectric tuning and loss due to the Kramers-Kronig relationship and that film crystallinity and strain, affected by the substrate template, play an important role. Ba(sub 0.50)Sr(sub 0.50)TiO (sub 3) films, nominally 400 nm thick, were deposited on 48 0.25 mm thick, 5 cm diameter LaAlO(sub 3) wafers. Although previous results suggested that Mn-doped films on MgO were intrinsically superior in terms of phase shift per unit loss, for this application phase shift per unit length was more important. The composition was selected as a compromise between tuning and loss for room temperature operation (e.g. crystallinity progressively degrades for Ba concentrations in excess of 30 percent). As a prelude to fabricating the array, it was necessary to process, screen, and inventory a large number of samples. Variable angle ellipsometry was used to characterize refractive index and film thickness across each wafer. Microstructural properties of the thin films were characterized using high resolution X-ray diffractometry. Finally, prototype phase shifters and resonators were patterned on each wafer and RE probed to measure tuning as a function of dc bias voltage as well as peak (0 field) permittivity and unloaded Q. The relationship among film quality and uniformity and performance is analyzed. This work presents the first statistically relevant study of film quality and microwave performance and represents a milestone towards commercialization of thin ferroelectric films for microwave applications.

Ferroelectric thin films↗
NASA NTRS2000

A Theoretical Model for Thin Film Ferroelectric Coupled Microstripline Phase Shifters

Novel microwave phase shifters consisting of coupled microstriplines on thin ferroelectric films have been demonstrated recently. A theoretical model useful for predicting the propagation characteristics (insertion phase shift, dielectric loss, impedance, and bandwidth) is presented here. The model is based on a variational solution for line capacitance and coupled strip transmission line theory.

Romanofsky, R. R.↗
NASA NTRS2000

Current Status of Thin Film (Ba,Sr)TiO3 Tunable Microwave Components for RF Communications

The performance of proof-of-concept ferroelectric microwave devices has been moving steadily closer to the level needed for satellite and other rf communications applications. This paper will review recent progress at NASA Glenn in developing thin film Ba(x)Sr(1-x)TiO3 tunable micro-wave components for these applications. Phase shifters for phased array antennas, tunable filters and tunable oscillators employing microstrip and coupled microstrip configurations will be presented. Tunabilities, maximum dielectric constants, and phase shifter parameters will be discussed (e.g., coupled microstrip phase shifters with phase shift over 200 deg at 18 GHz and a figure of merit of 74.3 deg/dB). Issues of post-annealing, Mn-doping and Ba(x)Sr(1-x) TiO3 growth on sapphire and alumina substrates will be covered. The challenges of incorporating these devices into larger systems, such as yield, variability in phase shift and insertion loss, and protective coatings will also be addressed.

VanKeuls, F. W.↗
NASA NTRS1999

Epitaxial Ferroelectric Ba(0.5)Sr(0.5)TiO3 Thin Films for Room-Temperature High-Frequency Tunable Element Applications

Perovskite Ba(0.5)SR(0.5)TiO3 thin films have been synthesized on (001) LaAl03 substrates by pulsed laser ablation. Extensive X-ray diffraction, rocking curve, and pole-figure studies suggest that the films are c-axis oriented and exhibit good in-plane relationship of <100>(sub BSTO)//<100>(sub LAO). Rutherford Backscattering Spectrometry studies indicate that the epitaxial films have excellent crystalline quality with an ion beam minimum yield chi(sub min) Of only 2.6 %. The dielectric property measurements by the interdigital technique at 1 MHz show room temperature values of the relative dielectric constant, epsilon(sub r), and loss tangent, tan(sub delta), of 1430 and 0.007 with no bias, and 960 and 0.001 with 35 V bias, respectively. The obtained data suggest that the as-grown Ba(0.5)SR(0.5)TiO3 films can be used for development of room-temperature high-frequency tunable elements.

Chen, C. L.↗
NASA NTRS1999

Room Temperature Thin Film Ba(x)Sr(1-x)TiO3 Ku-Band Coupled MicrostripPhase Shifters: Effects of Film Thickness, Doping, Annealing and Substrate Choice

We report on measurements taken on over twenty Ku-band coupled microstrip phase shifters (CMPS) using thin ferroelectric films of Ba(x)Sr(1-x)TiO3. This CMPS design is a recent innovation designed to take advantage of the high tunability and tolerate the high dielectric constant of ferroelectric films at Ku- and K-band frequencies. These devices are envisioned as a component in low-cost steerable beam phased area antennas, Comparisons are made between devices with differing film thickness, annealed vs unannealed, Mn-doped vs. undoped, and also substrates of LaAlO3 and MgO. A comparison between the CMPS structure and a CPW phase shifter was also made oil the same ferroelectric film.

VanKeuls, F. W.↗
NASA NTRS1999

Thin Film Ba(x)Sr(1-x)TiO3 Ku- and K-Band Phase Shifters Grown on MgO Substrates

We report measurements of gold circuits fabricated on four Ba(x)Sr(1-x)TiO3 films doped with 1% Mn grown on MgO substrates by laser ablation. Low frequency measurements of epsilon(sub r) and tan(delta) on interdigital capacitors are compared with high frequency measurements of phase shift and insertion loss on coupled microstrip phase shifters done on the same films. The variation in temperature of both high and low frequency device parameters is compared. Annealed and unannealed films are compared. Room temperature figures of merit of phase shift per insertion loss of up to 58.4 C/dB at 18 GHz and 400 V dc bias were measured.

VanKeuls, F. W.↗
NASA NTRS1999

Thin Film Ba(x) Sr(1-x)TiO3 Coupled Microstrip Ku- and K-band Phase Shifters

In this report authors found that the: (1) Best room temperature CMPS performance seen on 1% Mn-doped Ba(0.6)Sr(0.4)TiO3 annealed films on MgO: K = 74 C/dB. Phase Shift/coupled length: 1427 C/cm (2) Attempt to improve phase shifters through thicker as-deposited films stymied by declining film quality with film thickness. Annealing may alleviate this problem. (3) CMPS phase shift at Ku-band didn't experience the great rise in tunability seen in 1 MHz epsilon(sub r)(0) data. (4) While CMPS circuits may be well suited for arrays, simpler circuits like CPW would be more useful for characterizing epsilon(sub r) and tan(delta) at Ku-and K-band. (5) New substrates and designs are being tested.

VanKeuls, F. W.↗
NASA NTRS1998

Tunable Microwave Components for Ku- and K-Band Satellite Communications

The use of conductor/ferroelectric/dielectric thin film multilayer structures for frequency and phase agile components at frequencies at and above the Ku-band will be discussed. Among these components are edge coupled filters, microstripline ring resonators, and phase shifters. These structures were implemented using SrTiO3 (STO) ferroelectric thin films, with gold or YBa2Cu3O7-d (YBCO) high temperature superconducting (HTS) microstrip fines deposited by laser ablation on LaAlO3 (LAO) substrates. The performance of these structures in terms of tunability, operating temperature, frequency, and dc bias will be presented. Because of their small size, light weight, and low loss, these tunable microwave components are being studied very intensely at NASA as well as the commercial communication industry. An assessment of the progress made so far, and the issues yet to be solved for the successful integration of these components into the aforementioned communication systems will be presented.

Miranada, F. A.↗
NASA NTRS1998

Influence of the Biasing Scheme on the Performance of Au/SrTiO3/LaAlO3 Thin Film Conductor/Ferroelectric Tunable Ring Resonators

The performance of gold/SrTio3 /LaAlO3 conductor/ferroelectric/dielectric side-coupled, tunable ring resonators at K-band frequencies is presented. The tunability of these rings arises from the sensitivity of the relative dielectric constant (Er) of SrTiO 3 to changes in temperature and dc electric fields (E). We observed that the change in F-, which takes place by biasing the ring up to 450 V alters the effective dielectric constant (e-eff) of the circuit resulting in a 3k resonant frequency shift of nearly 12 % at 77 K. By applying a separate dc bias between the microstrip line and the ring, one can optimize their coupling to obtain bandstop resonators with unloaded quality factors (Q(sub o)) as high as 12,000. The 31 resonance was tuned from 15.75 to 17.41 GHz while keeping Q. above 768 over this range. The relevance of these results for practical microwave components will be discussed.

VanKeuls, F. W.↗
NASA NTRS1998

Several Microstrip-Based Conductor/Thin Film Ferroelectric Phase Shifter Designs Using (YBa2Cu3O(7 - Delta), Au)/SrTiO3/LaAlO3 Structures

We have designed, fabricated, and tested several novel microstrip-base YBa2Cu3O7-delta/SrTiO3/LaAlO3 (YBCO/STO/LAO) and Au/SrTiO3ALO3 (Au/STO/LAO) phase shifters. The first design consists of eight coupled microstrip phase shifters (CMPS) in series. This design using YBCO achieved a relative insertion phase shift (Delta f) of 484 degrees with a figure of merit of 80 degrees/dB at Vdc = 375 V, 16 GHz, and 40 K. A Delta f of 290 degrees was observed while maintaining the insertion loss below 4.5 dB. At 77 K, a Delta of 420 degrees was obtained for this phase shifter at the same bias and frequency. Both results correspond to an effective coupling length of 0.33 cm. A second compact design, consisting of an Au meander line and a CMPS section was also tested. Of the two samples tested, the best showed a figure of merit of 43 degrees/dB with Delta f = 290 degrees and 6.8 dB loss, at 40 K, 10 GHz and 400 V. Experimental and modeling results on these circuits will be discussed in the context of potential applications.

VanKeuls, F. W.↗
NASA NTRS1995

Integrated Cryogenic Satellite Communications Cross-Link Receiver Experiment

An experiment has been devised which will validate, in space, a miniature, high-performance receiver. The receiver blends three complementary technologies; high temperature superconductivity (HTS), pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuits (MMIC), and a miniature pulse tube cryogenic cooler. Specifically, an HTS band pass filter, InP MMIC low noise amplifier, HTS-sapphire resonator stabilized local oscillator (LO), and a miniature pulse tube cooler will be integrated into a complete 20 GHz receiver downconverter. This cooled downconverter will be interfaced with customized signal processing electronics and integrated onto the space shuttle's 'HitchHiker' carrier. A pseudorandom data sequence will be transmitted to the receiver, which is in low Earth orbit (LEO), via the Advanced Communication Technology Satellite (ACTS) on a 20 GHz carrier. The modulation format is QPSK and the data rate is 2.048 Mbps. The bit error rate (BER) will be measured in situ. The receiver is also equipped with a radiometer mode so that experiment success is not totally contingent upon the BER measurement. In this mode, the receiver uses the Earth and deep space as a hot and cold calibration source, respectively. The experiment closely simulates an actual cross-link scenario. Since the receiver performance depends on channel conditions, its true characteristics would be masked in a terrestrial measurement by atmospheric absorption and background radiation. Furthermore, the receiver's performance depends on its physical temperature, which is a sensitive function of platform environment, thermal design, and cryocooler performance. This empirical data is important for building confidence in the technology.

Romanofsky, R. R.↗
NASA NTRS1995

Space qualified hybrid superconductor/semiconductor planar oscillator circuit

We report on the space qualification of a hybrid superconductor/semiconductor planar local oscillator (LO) at 8.4 GHz. This oscillator was designed, fabricated, and tested as a component for the High Temperature Superconductivity Space Experiment 2 (HTSSE-2). The LO consisted of a GaAs MESFET and microstrip circuitry patterned onto a YBa2Cu3O(7-delta) high temperature superconducting (HTS) thin film on a 1.0 x 1.0 sq cm lanthanum aluminate (LaAlO3) substrate. At 77 K, this oscillator achieved power output levels up to 10 dBm into a 50 Ohm load. When incorporated into a full cryogenic receiver, the LO provided output powers within 0.0-3.0 dBm with less than 50 mW of dc power dissipation. Space qualification data on the sensitivity of the HTS films to the processing steps involved in the fabrication of HTS-based components are presented. Data on ohmic contacts, strength of wire bonds made to such contacts, and aging effects as well as vibration test results are discussed.

Miranda, F. A.↗
NASA NTRS1993

Space applications of superconducting microwave electronics at NASA Lewis Research Center

Since the discovery of high temperature superconductivity in 1987, NASA Lewis Research Center has been involved in efforts to demonstrate its advantages for applications involving microwave electronics in space, especially space communications. The program included thin film fabrication by means of laser ablation. Specific circuitry which was investigated includes microstrip ring resonators at 32 GHz, phase shifters which utilize a superconducting, optically activated switch, an 8x8 32 GHz superconducting microstrip antenna array, and an HTS-ring-resonator stabilized oscillator at 8 GHz. The latter two components are candidates for use in space experiments which are described in other papers. Experimental data on most of the circuits are presented as well as, in some cases, a comparison of their performance with an identical circuit utilizing gold or copper metallization.

Leonard, R. F.↗
NASA NTRS1993

High-Temperature-Superconductor Films In Microwave Circuits

Report discusses recent developments in continuing research on fabrication and characterization of thin films of high-temperature superconducting material and incorporation of such films into microwave circuits. Research motivated by prospect of exploiting superconductivity to reduce electrical losses and thereby enhancing performance of such critical microwave components as ring resonators, filters, transmission lines, phase shifters, and feed lines in phased-array antennas.

Bhasin, K. B.↗