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Roques, R. A.

Publications and source records attributed to Roques, R. A..

LSA silicon material task closed-cycle process development

The initial effort on feasibility of the closed cycle process was begun with the design of the two major items of untested equipment, the silicon tetrachloride by product converter and the rotary drum reactor for deposition of silicon from trichlorosilane. The design criteria of the initial laboratory equipment included consideration of the reaction chemistry, thermodynamics, and other technical factors. Design and construction of the laboratory equipment was completed. Preliminary silicon tetrachloride conversion experiments confirmed the expected high yield of trichlorosilane, up to 98 percent of theoretical conversion. A preliminary solar-grade polysilicon cost estimate, including capital costs considered extremely conservative, of $6.91/kg supports the potential of this approach to achieve the cost goal. The closed cycle process appears to have a very likely potential to achieve LSA goals.

Roques, R. A.

The reduction of SiO2 with carbon in a plasma

The feasibility of a process for the reduction of low impurity silica (SiO2) with carbon in a plasma heat source was investigated. An RF induction plasma reactor was fabricated and used to optimize process variables. Maximum silicon content of the product was 33% by weight. Emission spectrographic analysis of this product showed a reduction in some impurity levels of one to two orders of magnitude. While the plasma approach proved technically feasible, poor heat transfer from the plasma to the reactant and low yield make the process economically unattractive for large-scale use.

Coldwell, D. M.

Silicon material task. Part 3: Low-cost silicon solar array project

The feasibility of a process for carbon reduction of low impurity silica in a plasma heat source was investigated to produce low-cost solar-grade silicon. Theoretical aspects of the reaction chemistry were studied with the aid of a computer program using iterative free energy minimization. These calculations indicate a threshold temperature exists at 2400 K below which no silicon is formed. The computer simulation technique of molecular dynamics was used to study the quenching of product species.

Roques, R. A.