Development of 22.5 % p-type tunnel oxide passivated contact solar cells through efficiency enhancement by replacing local Al-BSF in PERC cells with (p+) poly-Si/SiO2 carrier selective contact
Not Available
Choi, Wook-Jin (ORCID:000000032568419X)↗
Engineering topics
Rounsaville, Brian
Publications and source records attributed to Rounsaville, Brian.
Development of APCVD BSG and POCl 3 Codiffusion Process for Double-Side TOPCon Solar Cell Precursor Fabrication
This paper presents a commercially viable process for fabricating a high-quality double-side tunnel oxide passivating contact (DS-TOPCon) cell precursor using APCVD-deposited boron silicate glass and ex-situ POCl 3 diffusion in a single high-temperature step, eliminating the need for additional masking and diffusion processes. A two-tier temperature profile was developed, involving a pre-annealing at above 900°C in nitrogen (N2) ambient followed by POCl 3 diffusion at 840°C. We investigated the effect of varying pre-annealing temperatures, ranging from 875°C to 950°C, on the passivation quality and metal-Si contact properties of both n-TOPCon and p-TOPCon layers. The resultant DS-TOPCon cell precursor after silicon nitride (SiNX) passivation exhibited an excellent iV OC of close to 730 mV. In addition, a rapid asymmetric poly-Si thinning technique, developed in this work, enabled adjustment of the front n + poly-Si thickness while maintaining the rear p + poly-Si thickness. Two types of DS-TOPCon cell architectures can be fabricated: i) full-area thin (≈40nm) n-TOPCon layer on the front and ii) selective-area thick (≈200nm) n-TOPCon fingers underneath the metal grid. Device simulations suggest that full-area DS-TOPCon cell with 40 nm n + poly-Si and selective-area DS-TOPCon cell with 200 nm n + poly fingers on the front, fabricated from our current DS-TOPCon cell precursor, can achieve cell efficiencies of 22.1 and 23.5%, respectively. Detailed power loss analysis and device simulation reveal that further improvements in material and device parameters have potential to push the cell efficiencies of DS-TOPCon cell structure beyond 25%, making it a promising alternative to fabricate a high-efficiency next-generation solar cells at low cost.
14 SOLAR ENERGY↗
Hydrogen Sulfide Passivation for p-Type Passivated Emitter and Rear Contact Solar Cells
This work reports on the application of sulfur (S)-passivation to passivated emitter and rear contact (PERC) solar cells. The emitter surface was passivated by hydrogen sulfide (H 2 S) gas phase reaction and capped by a hydrogenated amorphous silicon nitride (a-SiN x :H) layer. The sulfur passivation on a symmetrically n + diffused emitter is shown to lead to an emitter saturation current density (J 0n+ ) of 30 fA/cm 2 at R sheet,n+ ≈ 100 Ω/sq. The application of S-passivation to the emitter surface in the PERC cell structure, with the rear surface passivated by an aluminum oxide (Al 2 O 3 )/a-SiN x :H stack, showed a promising implied open-circuit voltage (iV OC ) of 686 mV before metallization. This iV OC was higher than that for the a-SiN x :H or SiO 2 /a-SiN x :H passivated emitter surfaces (675 and 674 mV, respectively) on PERC cells processed in the same run. However, a significant drop in cell V OC is observed for the S-passivated PERC cell after the completion of device fabrication with laser patterning, screen-printed metal contact deposition, and firing. Nonetheless, an efficiency of ~20% and a V OC of ~650 mV was achieved with an emitter surface passivated by sulfur. We identified that the 760°C contact firing process degrades the S-passivation quality. Furthermore, the surface morphology was studied, and a detailed surface analysis was performed to study the causes of the S-passivated surface degradation.
14 SOLAR ENERGY↗
Investigation of long-term light stability of negative charge injected into oxide-nitride-oxide passivation stack of crystalline silicon solar cells
A negatively charged oxide-nitride-oxide stack for field-effect passivation of crystalline silicon solar cells is discussed. The negative charge was injected into the stack by a plasma charge injection technology. Charge stability was studied by exposing samples to AM1.5 simulation visible light and full-spectrum light at temperatures ranging from 55 to 78 °C for up to 300 h. Charge injection and loss were quantified based on shifts in the flatband voltage of capacitance–voltage curves measured with a mercury probe. The most probable mechanism of charge loss was found to be diffusion of negative charged hydrogen atoms through nitride and bottom oxide. The optimum recipe for each layer of the stack was investigated to minimize the loss of injected charge. The flatband voltage decay of the optimized stack was found to fit a power-law trend, suggesting the dispersive transport of hydrogen atoms with a dispersion parameter of ~0.06–0.07. The optimized stack is projected to maintain a negative charge density of about 3.6 × 10 12 cm –2 or more after 25 years of field operation in an environment such as Arizona, which would be sufficient for field-effect passivation under one-sun illumination. Furthermore, the high stability of the negative injected charge makes the plasma charging technology a safer and lower cost alternative to Al 2 O 3 -passivation technology commonly used to passivate p-type surfaces.
14 SOLAR ENERGY↗
Translating Material-Level Characterization of Carbon-Nanotube-Reinforced Composite Gridlines to Module-Level Degradation
Cell cracks in PV modules caused by poor handling during shipping and installation as well as from extreme weather events can lead to gradual or immediate power degradation. To directly address cell-crack-induced degradation, we have formulated a carbon nanotube additive for commercial screen printed silver pastes. We have shown in previous work that these metal matrix composites have little to no effect on the cell's efficiency while enhancing the metallization's fracture toughness and electrical gap-bridging capability. In this work, we focus on translating materials level characterization techniques to module level degradation. We found that we get conflicting results from two different methods of measuring the metallization's ability to electrically bridge gaps in cracked solar cells. Mini-module stress testing is currently underway to determine which materials characterization correlates well with the min-module degradation characteristics.
carbon nanotubes↗
Technology Development for ≥ 22.5% Efficient p-PERC Solar Cells
The overall objective of this program is to achieve ≥ 22.5 % bifacial p-type cell efficiencies by developing and implementing optimized homogeneous phosphorus (P) emitter on the front and tunnel oxide passivated boron (B) doped poly-Si contact (p-TOPCon) on the rear side, in combination with advanced fine-line screen-printing metallization and high bulk lifetime in the base material.
14 SOLAR ENERGY↗
Optimization of Carbon-Nanotube-Reinforced Composite Gridlines Towards Commercialization
Solar cells in PV modules crack during field operation from environmental stressors, including extreme weather events, such as hailstorms and hurricanes. These cracks can lead to gradual or immediate acute power degradation. To directly address cell-crack-induced degradation, we have formulated a carbon nanotube additive for commercial screen printed silver pastes. We have shown in previous work that these metal matrix composites have little to no effect on the cell’s efficiency while enhancing the metallization’s fracture toughness and electrical gap-bridging capability. In this work, we focus on optimizing the composite metallization to achieve the best possible performance. We discover that reducing carbon nanotube agglomerations in the paste not only improves the printability for narrow gridlines, but also increases the modulus of toughness of the metallization by over 500%.
carbon nanotubes↗