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Rouvimov, S.

Publications and source records attributed to Rouvimov, S..

8 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Shock-induced reaction synthesis of cubic boron nitride

Here, we report ultra-fast (0.1–5 μs) shock-induced reactions in the 3B-TiN system, leading to the direct synthesis of cubic boron nitride, which is extremely rare in nature and is the second hardest material known. Composite powders were produced through high-energy ball milling to provide intimate mixing and subsequently shocked using an explosive charge. High-resolution transmission electron microscopy and X-ray diffraction confirm the formation of nanocrystalline grains of c-BN produced during the metathetical reaction between boron and titanium nitride. Our results illustrate the possibility of rapid reactions enabled by high-energy ball milling possibly occurring in the solid state on incredibly short timescales. This process may provide a route for the discovery and fabrication of advanced compounds.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy

We investigated structural and emission properties of self-organized InP/GaInP quantum dots (QD) grown by metal organic chemical vapor deposition using an amount of deposited In from 7 to 2 monolayers (ML). In the uncapped samples, using atomic force microscopy (AFM), we observed lateral sizes of 100–200 nm, together with a bimodal height distribution having maxima at ∼5 and ∼15 nm, which we denoted as QDs of type A and B, respectively; and reduction of the density of the type-B dots from 4.4 to 1.6 μm{sup –2}. The reduction of the density of B-type dots were observed also using transmission electron microscopy of the capped samples. Using single dot low-temperature photoluminescence (PL) spectroscopy we demonstrated effects of Wigner localization for the electrons accumulated in these dots.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Near-field scanning magneto-optical spectroscopy of Wigner molecules

We study the emission spectra of single self-organized InP/GaInP QDs (size 100-220 nm) using high-spatial-resolution, low-temperature (5 K) near-field scanning optical microscope (NSOM) operating at magnetic field strength B=0-10 T. The dots contain up to twenty electrons and represent natural Wigner molecules (WM). We observed vibronic-type shake-up structure in single electron QDs manifesting formation of two electron (2e) WM in photo-excited state. We found that relative intensities of the shake-up components described well by vibronic Frank-Condon factors giving for dots having parabolic confinement energy ħω{sub 0}=1.2-4 meV molecule bond lengths 40-140 nm. We used measurements of magnetic-field-induced shifts to distinguish emission of 2e-WM and singly charged exciton (trion). We also observed magnetic-field-induced molecular-droplet transition for two electron dot, emitting through doubly charge exciton (tetron) at zero magnetic field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Synthesized multiwall MoS{sub 2} nanotube and nanoribbon field-effect transistors

We report on the fabrication and characterization of synthesized multiwall MoS{sub 2} nanotube (NT) and nanoribbon (NR) field-effect transistors (FETs). The MoS{sub 2} NTs and NRs were grown by chemical transport, using iodine as a transport agent. Raman spectroscopy confirms the material as unambiguously MoS{sub 2} in NT, NR, and flake forms. Transmission electron microscopy was used to observe cross sections of the devices after electrical measurements and these were used in the interpretation of the electrical measurements, allowing the estimation of the current density. The NT and NR FETs demonstrate n-type behavior, with ON/OFF current ratios exceeding 10{sup 3}, and with current densities of 1.02 μA/μm and 0.79 μA/μm at V{sub DS} = 0.3 V and V{sub BG} = 1 V, respectively. Photocurrent measurements conducted on a MoS{sub 2} NT FET revealed short-circuit photocurrent of tens of nanoamps under an excitation optical power of 78 μW and 488 nm wavelength, which corresponds to a responsivity of 460 μA/W. A long channel transistor model was used to model the common-source characteristics of MoS{sub 2} NT and NR FETs and was shown to be consistent with the measured data.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Effect of catalyst diameter on vapour-liquid-solid growth of GaAs nanowires

GaAs nanowires were grown on (111)B GaAs substrates using the vapour-liquid-solid mechanism. The Au/Pt nanodots used to catalyse wire growth were defined lithographically and had varying diameter and separation. An in-depth statistical analysis of the resulting nanowires, which had a cone-like shape, was carried out. This revealed that there were two categories of nanowire present, with differing height and tapering angle. The bimodal nature of wire shape was found to depend critically on the diameter of the Au-Ga droplet atop the nanowire. Transmission electron microscopy analysis also revealed that the density of stacking faults in the wires varied considerably between the two categories of wire. It is believed that the cause of the distinction in terms of shape and crystal structure is related to the contact angle between the droplet and the solid-liquid interface. The dependency of droplet diameter on contact angle is likely related to line-tension, which is a correction to Young's equation for the contact angle of a droplet upon a surface. The fact that contact angle may influence resulting wire structure and shape has important implications for the planning of growth conditions and the preparation of wires for use in proposed devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Morphology evolution in strain-compensated multiple quantum well structures

Morphology evolution in (In,Ga)As-Ga(As,P) strain-compensated multilayer structures is studied. The effects of nanoscale interface corrugation and phase separation are evident after the third period of the multilayer structure and become more pronounced with each new stack until the sixth period. Then, the interface stabilizes pointing to the formation of strain-balanced equilibrium interface structure. The epitaxial structure remains defect-free up to the maximum number (twenty) of periods studied. In a structure with a high lattice mismatch between the neighboring layers, In{sub 0.40}Ga{sub 0.60}As/GaAs{sub 0.85}P{sub 0.15}, clusters of dislocations are revealed already in the third period. The observed phenomena are critical for proper engineering of optoelectronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗