Engineering topics
Rouvimov, Sergei
Publications and source records attributed to Rouvimov, Sergei.
Programmable bias field observed in graded ferromagnetic semiconductor films with broken symmetry
We report on the observation of a field-induced magnetic bias effect in a Ga 0.94 Mn 0.06 As 1-y P y thin film with digitally graded phosphorus content. Although phosphorus concentration in the sample is changed in steps from y approximate to 0.03 to y approximate to 0.28, the magnetometry and magnetotransport data display a coherent magnetic response typical for single-layer in-plane magnetized films with cubic and weak [110] uniaxial anisotropy. Unexpectedly, low-temperature planar Hall resistance loops exhibit remarkable asymmetry tunable by application of strong in-plane initial magnetic field H Ini . We discuss this unusual memory effect, resembling the magnetization asymmetry in the exchange biased magnetic bilayers, in terms of a unidirectional bias field H b induced by H Ini . We show that such bias field defines the delayed or accelerated nucleation of domains with chiral domain walls performing the magnetization reversal.
Crystal Structure of Individual CsPbBr 3 Perovskite Nanocubes
The atomic structure of CsPbBr 3 nanocubes (NCs) was studied at the single-particle level via a high-resolution transmission electron microscopy (HRTEM) defocus-series analysis. Here, the technique entails acquiring lattice-resolved HRTEM images of individual NCs over progressive defocus values. CsPbBr 3 NC atomic structure was evaluated by comparing acquired experimental data to simulated lattice-resolved images and corresponding Fourier transform patterns of both orthorhombic (Pnma) and cubic (Pm$\bar{3}$m) CsPbBr 3 polymorphs. Herein, CsPbBr 3 NCs with average edge lengths (l) of l ~10 and 5 nm are analyzed using the aforementioned technique. In the former, we find evidence for the coexistence of both cubic and orthorhombic lattices. In the latter, solely cubic character is observed, illustrating a potential size dependency to the crystal symmetry of CsPbBr 3 NCs. Such structural measurements provide critical insight into elucidating the structure/(optical and electrical) function relationship of CsPbBr 3 NCs.
Tunable mesoporous films from copolymers with degradable side chains as membrane precursors
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Kinetics and Mechanism of Ignition in Reactive Al/Ni Nanostructured Materials
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Mobilization and agglomeration of uraninite nanoparticles: A nano-mineralogical study of samples from the Matoush Uranium ore deposit
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Origin of the Size-Dependent Stokes Shift in CsPbBr 3 Perovskite Nanocrystals
In this report the origin of the size-dependent Stokes shift in CsPbBr 3 nanocrystals (NCs) is explained for the first time. Stokes shifts range from 82 to 20 meV for NCs with effective edge lengths varying from ~4 to 13 nm. We show that the Stokes shift is intrinsic to the NC electronic structure and does not arise from extrinsic effects such as residual ensemble size distributions, impurities, or solvent-related effects. The origin of the Stokes shift is elucidated via first-principles calculations. Corresponding theoretical modeling of the CsPbBr 3 NC density of states and band structure reveals the existence of an intrinsic confined hole state 260 to 70 meV above the valence band edge state for NCs with edge lengths from ~2 to 5 nm. A size-dependent Stokes shift is therefore predicted and is in quantitative agreement with the experimental data. Comparison between bulk and NC calculations shows that the confined hole state is exclusive to NCs. At a broader level, the distinction between absorbing and emitting states in CsPbBr 3 is likely a general feature of other halide perovskite NCs and can be tuned via NC size to enhance applications involving these materials.
Nuclear-blast induced nanotextures in quartz and zircon within Trinitite
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Experimental demonstration of single electron transistors featuring SiO{sub 2} plasma-enhanced atomic layer deposition in Ni-SiO{sub 2}-Ni tunnel junctions
The authors report the use of plasma-enhanced atomic layer deposition (PEALD) to fabricate single-electron transistors (SETs) featuring ultrathin (≈1 nm) tunnel-transparent SiO{sub 2} in Ni-SiO{sub 2}-Ni tunnel junctions. They show that, as a result of the O{sub 2} plasma steps in PEALD of SiO{sub 2}, the top surface of the underlying Ni electrode is oxidized. Additionally, the bottom surface of the upper Ni layer is also oxidized where it is in contact with the deposited SiO{sub 2}, most likely as a result of oxygen-containing species on the surface of the SiO{sub 2}. Due to the presence of these surface parasitic layers of NiO, which exhibit features typical of thermally activated transport, the resistance of Ni-SiO{sub 2}-Ni tunnel junctions is drastically increased. Moreover, the transport mechanism is changed from quantum tunneling through the dielectric barrier to one consistent with thermally activated resistors in series with tunnel junctions. The reduction of NiO to Ni is therefore required to restore the metal-insulator-metal (MIM) structure of the junctions. Rapid thermal annealing in a forming gas ambient at elevated temperatures is presented as a technique to reduce both parasitic oxide layers. This method is of great interest for devices that rely on MIM tunnel junctions with ultrathin barriers. Using this technique, the authors successfully fabricated MIM SETs with minimal trace of parasitic NiO component. They demonstrate that the properties of the tunnel barrier in nanoscale tunnel junctions (with <10{sup −15} m{sup 2} in area) can be evaluated by electrical characterization of SETs.
Atomic layer deposition of Al{sub 2}O{sub 3} for single electron transistors utilizing Pt oxidation and reduction
This work describes the fabrication of single electron transistors using electron beam lithography and atomic layer deposition to form nanoscale tunnel transparent junctions of alumina (Al{sub 2}O{sub 3}) on platinum nanowires using either water or ozone as the oxygen precursor and trimethylaluminum as the aluminum precursor. Using room temperature, low frequency conductance measurements between the source and drain, it was found that devices fabricated using water had higher conductance than devices fabricated with ozone. Subsequent annealing caused both water- and ozone-based devices to increase in conductance by more than 2 orders of magnitude. Furthermore, comparison of devices at low temperatures (∼4 K) showed that annealed devices displayed much closer to the ideal behavior (i.e., constant differential conductance) outside of the Coulomb blockade region and that untreated devices showed nonlinear behavior outside of the Coulomb blockade region (i.e., an increase in differential conductance with source-drain voltage bias). Transmission electron microscopy cross-sectional images showed that annealing did not significantly change device geometry, but energy dispersive x-ray spectroscopy showed an unusually large amount of oxygen in the bottom platinum layer. This suggests that the atomic layer deposition process results in the formation of a thin platinum surface oxide, which either decomposes or is reduced during the anneal step, resulting in a tunnel barrier without the in-series native oxide contribution. Furthermore, the difference between ozone- and water-based devices suggests that ozone promotes atomic layer deposition nucleation by oxidizing the surface but that water relies on physisorption of the precursors. To test this theory, devices were exposed to forming gas at room temperature, which also reduces platinum oxide, and a decrease in resistance was observed, as expected.
Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy
Layered materials are an actively pursued area of research for realizing highly scaled technologies involving both traditional device structures as well as new physics. Lately, non-equilibrium growth of 2D materials using molecular beam epitaxy (MBE) is gathering traction in the scientific community and here we aim to highlight one of its strengths, growth of abrupt heterostructures, and superlattices (SLs). In this work we present several of the firsts: first growth of MoTe 2 by MBE, MoSe 2 on Bi 2 Se 3 SLs, transition metal dichalcogenide (TMD) SLs, and lateral junction between a quintuple atomic layer of Bi 2 Te 3 and a triple atomic layer of MoTe 2 . In conclusion, reflected high electron energy diffraction oscillations presented during the growth of TMD SLs strengthen our claim that ultrathin heterostructures with monolayer layer control is within reach.