Search NASA⌕ Search

Engineering topics

Ruden, P. Paul

Publications and source records attributed to Ruden, P. Paul.

5 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Semiconductors: Interface Design Principles for High-Performance Organic Semiconductor Devices (Adv. Sci. 6/2015)

Organic solar cells (OSCs) are a promising cost-effective candidate in next generation photovoltaic technology. However, a critical bottleneck for OSCs is the electron/hole recombination loss through charge transfer state at the interface, which greatly limits the power conversion efficiency. In article number 1500024, W. Nie, A. Mohite, and co-workers demonstrate a simple strategy of suppressing the recombination rate by inserting a spacer layer at the donor-acceptor interface, resulting in a dramatic increase in power conversion efficiency.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Current–voltage characteristics of organic heterostructure devices with insulating spacer layers

The dark current density in donor/acceptor organic planar heterostructure devices at a given forward voltage bias can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of interfacial exciplex states. If the exciplex recombination rate limits current flow, an insulating interface layer decreases the dark current. However, if the exciplex formation rate limits the current, an insulating interface layer may increase the dark current. As a result, we present a device model to describe this behavior, and we discuss relevant experimental data.

25 ENERGY STORAGE↗
DOE OSTI2015

Effects of disorder on spin injection and extraction for organic semiconductor spin-valves

A device model for tunnel injection and extraction of spin-polarized charge carriers between ferromagnetic contacts and organic semiconductors with disordered molecular states is presented. Transition rates for tunneling are calculated based on a transfer Hamiltonian. Transport in the bulk semiconductor is described by macroscopic device equations. Tunneling predominantly involves organic molecular levels near the metal Fermi energy, and therefore typically in the tail of the band that supports carrier transport in the semiconductor. Disorder-induced broadening of the relevant band plays a critical role for the injection and extraction of charge carriers and for the resulting magneto-resistance of an organic semiconductor spin valve.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1990

IR detectors based on n-i-p-i superlattices

The principles of operation of n-i-p-i photodetectors are discussed. Special consideration is given to issues that are relevant to the performance of IR detectors such as noise, dark current, and surface effects. In addition, a novel IR detector that promises to provide information about the spectral distribution of the infrared radiation emitted from an object and, consequently, about its temperature, independent of the distance between detector and object is discussed. This detector makes use of the possibility to modulate the internal electric fields of an n-i-p-i superlattice with an applied voltage. By this technique the spectral responsivity of the detector may be controlled electrically and some information about the shape of the emission spectrum may be obtained.

Ruden, P. Paul↗