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Russell, Stephen D.

Publications and source records attributed to Russell, Stephen D..

Voltage-induced broad-spectrum reflectivity change with surface-plasmon waves

Voltage-induced broad-spectrum reflectivity change with surface-plasmon waves is reported. When white light is incident at a metal/electro-optical material interface, surface-plasmon waves can be excited under phase match conditions. This surface-plasmon resonance depends on the dielectric constants of both the metal and the electro-optical material. Photons in the surface-plasmon resonance wavelength range are absorbed by the interface. Since metals have large imaginary parts of their dielectric constants, the surface-plasmon resonances are broad and may cover all visible wavelengths. Applying voltage to the electro-optical material to change its dielectric constant can result in a change in the reflectivity at the interface. Experimental results showed a reflectivity change from almost 0% to about 40% under an applied voltage using a liquid-crystal and nickel film structure, and the results had good agreement with theoretical calculations. The theoretical calculations also predicted a 90% reflectivity recovery by exciting surface-plasmon waves at a Rh-Al/electro-optical material interface. These results demonstrate that a high efficiency white light modulator can be built using surface-plasmon excitations.

white light modulator↗

Method for making a monolithic integrated high-T.sub.c superconductor-semiconductor structure

A method for the fabrication of active semiconductor and high-temperature perconducting devices on the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.

Burns, Michael J.↗

Transmissive surface plasmon light valve

A surface plasmon device that operates in a transmissive mode. The light is coupled through optically transparent layers to a surface plasmon which alters the color of the light.

Russell, Stephen D.↗

Monolithic integrated high-T.sub.c superconductor-semiconductor structure

A method for the fabrication of active semiconductor and high-temperature superconducting device of the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.

Burns, Michael J.↗