Engineering topics

Rutledge, David B.

Publications and source records attributed to Rutledge, David B..

11 records

NASA NTRS2004

Class E/F switching power amplifiers

The present invention discloses a new family of switching amplifier classes called class E/F amplifiers. These amplifiers are generally characterized by their use of the zero-voltage-switching (ZVS) phase correction technique to eliminate of the loss normally associated with the inherent capacitance of the switching device as utilized in class-E amplifiers, together with a load network for improved voltage and current wave-shaping by presenting class-F.sup.-1 impedances at selected overtones and class-E impedances at the remaining overtones. The present invention discloses a several topologies and specific circuit implementations for achieving such performance.

Hajimiri, Seyed-Ali↗

NASA NTRS1993

Probe impedance measurements for millimeter-wave integrated horn antennas

In order to achieve an impedance-matched millimeter-wave integrated horn antenna mixer array, the characteristics of the antenna probes inside the horn must be known. This paper describes impedance measurements for various probes in low-frequency model horns of two different types: (1) a 3 x 3 array made of aluminum by electric discharge machining and (2) a half horn made of copper sheet placed on a big copper-clad circuit board that was used as an image plane. The results of measurements indicate that the presence of the horn increases the effective length of the probe element, in agreement with reports of Guo et al. (1991) and theoretical analysis of Eleftheriades et al. (1991). It was also found that the resonant frequencies can be controlled by changing the length of the probes or by loading the probes.

Guo, Yong↗

NASA NTRS1993

Tuners For Coplanar-Strip Transmission Lines

Sliding radio-frequency short circuits easily adjusted for optimum impedance. Tuning elements developed for use in planar integrated circuits operating at frequencies from about 10 to more than 1,000 GHz. Purpose of such adjustment to adjust impedance presented to circuit connected to nonshorted end of transmission line and thereby optimizes performance of circuit. Mixers, oscillators, amplifiers, couplers, and phase shifters among circuits improved by incorporating tuners of this type.

Mcgrath, William R.↗

NASA NTRS1993

Improved Grid-Array Millimeter-Wave Amplifier

Improved grid-array amplifiers operating at millimeter and submillimeter wavelengths developed for use in communications and radar. Feedback suppressed by making input polarizations orthogonal to output polarizations. Amplifier made to oscillate by introducing some feedback. Several grid-array amplifiers concatenated to form high-gain beam-amplifying unit.

Rosenberg, James J.↗

NASA NTRS1992

Quasi-optical antenna-mixer-array design for terahertz frequencies

A new quasi-optical antenna-mixer-array design for terahertz frequencies is presented. In the design, antenna and mixer are combined into an entity, based on the technology in which millimeter-wave horn antenna arrays have been fabricated in silicon wafers. It consists of a set of forward- and backward-looking horns made with a set of silicon wafers. The front side is used to receive incoming signal, and the back side is used to feed local oscillator signal. Intermediate frequency is led out from the side of the array. Signal received by the horn array is picked up by antenna probes suspended on thin silicon-oxynitride membranes inside the horns. Mixer diodes will be located on the membranes inside the horns. Modeling of such an antenna-mixer-array design is done on a scaled model at microwave frequencies. The impedance matching, RF and LO isolation, and patterns of the array have been tested and analyzed.

Guo, Yong↗

NASA NTRS1991

An adjustable RF tuning element for microwave, millimeter wave, and submillimeter wave integrated circuits

Planar RF circuits are used in a wide range of applications from 1 GHz to 300 GHz, including radar, communications, commercial RF test instruments, and remote sensing radiometers. These circuits, however, provide only fixed tuning elements. This lack of adjustability puts severe demands on circuit design procedures and materials parameters. We have developed a novel tuning element which can be incorporated into the design of a planar circuit in order to allow active, post-fabrication tuning by varying the electrical length of a coplanar strip transmission line. It consists of a series of thin plates which can slide in unison along the transmission line, and the size and spacing of the plates are designed to provide a large reflection of RF power over a useful frequency bandwidth. Tests of this structure at 1 GHz to 3 Ghz showed that it produced a reflection coefficient greater than 0.90 over a 20 percent bandwidth. A 2 GHz circuit incorporating this tuning element was also tested to demonstrate practical tuning ranges. This structure can be fabricated for frequencies as high as 1000 GHz using existing micromachining techniques. Many commercial applications can benefit from this micromechanical RF tuning element, as it will aid in extending microwave integrated circuit technology into the high millimeter wave and submillimeter wave bands by easing constraints on circuit technology.

Lubecke, Victor M.↗

NASA NTRS1991

Sliding backshorts for planar circuits

An adjustable planar imbedding circuit based on coplanar transmission lines is presented to deal with the impedance mismatch associated with the use of the Superconductor-Insulator-Superconductor tunnel junction. The planar embedding circuit is developed with movable noncontacting shorting elements that consist of thin metallic plates with optimized arrangements of rectangular holes. The rectangular holes are placed along the insulated metallic transmission line to provide a periodic variation of the line impedance. A large reflection coefficient is demonstrated with a scale model of the sliding backshort, and values of more than -0.5 dB are reported. The shorting elements are incorporated into a low-frequency tuning circuit to test the practical tuning ranges. The backshort can be used to fashion tuning stubs with variable post-fabrication electrical lengths which relaxes the design constraints of planar integrated circuits.

Lubecke, Victor M.↗

NASA NTRS1991

A grid amplifier

A 50-MESFET grid amplifier is reported that has a gain of 11 dB at 3.3 GHz. The grid isolates the input from the output by using vertical polarization for the input beam and horizontal polarization for the transmitted output beam. The grid unit cell is a two-MESFET differential amplifier. A simple calibration procedure allows the gain to be calculated from a relative power measurement. This grid is a hybrid circuit, but the structure is suitable for fabrication as a monolithic wafer-scale integrated circuit, particularly at millimeter wavelengths.

Kim, Moonil↗

NASA NTRS1989

Millimeter and submillimeter wave antenna structure

An integrated circuit antenna structure for transmitting or receiving millimeter and/or submillimeter wave radiation having an antenna relatively unimpaired by the antenna mounting arrangment is disclosed herein. The antenna structure of the present invention includes a horn disposed on a substrate for focusing electromagnetic energy with respect to an antenna. The antenna is suspended relative to the horn to receive or transmit the electromagnetic energy focused thereby.

Rebiez, Gabriel M.↗

NASA NTRS1988

Grid oscillators

Loading a two-dimensional grid with active devices offers a means of combining the power of solid-state oscillators in the microwave and millimeter-wave range. The grid structure allows a large number of negative resistance devices to be combined. This approach is attractive because the active devices do not require an external locking signal, and the combining is done in free space. In addition, the loaded grid is a planar structure amenable to monolithic integration. Measurements on a 25-MESFET grid at 9.7 GHz show power-combining and frequency-locking without an external locking signal, with an ERP of 37 W. Experimental far-field patterns agree with theoretical results obtained using reciprocity.

Popovic, Zorana B.↗

NASA NTRS1987

Submillimeter-wave antennas on thin membranes

Submillimeter-wave antennas have been fabricated on 1-micron thick silicon-oxynitride membranes. This approach results in better patterns than previous lens-coupled antennas, and eliminates the dielectric loss associated with the substrate lens. Measurements on a wideband log-periodic antenna at 700 GHz, 370 GHz and 167 GHz show no sidelobes and 3-dB beamwidths between 40 and 60 deg. A linear imaging array has similar patterns at 700 GHz. Possible applications for membrane antennas include wideband superconducting tunnel-junction receivers for radio astronomy and imaging arrays for radiometry and plasma diagnostics.

Rebeiz, Gabriel M.↗