Engineering topics

Sadwick, L.

Publications and source records attributed to Sadwick, L..

2 records

DOE OSTI2024

PROGRESS ON MAGNETRON R&DS FOR INDUSTRIAL PARTICLE ACCELERATORS

The magnetron as an efficient RF source for a compact industrial SRF accelerator has been developed. The per-formance of injection phase lock on two independent magnetron transmitters operated at 915MHz, in CW mode with maximum power of 75kW each has been demon-strated to satisfy this application. This industrial type magnetron has AC transformer and the SCR rectifier on the DC anode power supply. Output power spectrum with phase locking can achieve noise reduction of -21.2 dBc at the 1st 60 Hz, -28.0 dBc at 1st 180 Hz with only -22.6 dBc injection power. Further control studies for 2×75 kW, 915 MHz power combing by WR975 magic-tee at Jefferson Lab (JLab) and for 4×1.2 kW, 2.45 GHz power combing by WR340 magic-tee at General Atomics (GA).

Rimmer, R.↗

NASA NTRS1987

Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

Lin, T. L.↗